Patents by Inventor Hung-Chih Chang

Hung-Chih Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9528589
    Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: December 27, 2016
    Assignee: Victory Industrial Corporation
    Inventors: Hung-Chih Chang, Szu-En Liu
  • Publication number: 20160336389
    Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.
    Type: Application
    Filed: July 27, 2016
    Publication date: November 17, 2016
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu, Samuel C. Pan
  • Publication number: 20160307928
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.
    Type: Application
    Filed: June 29, 2016
    Publication date: October 20, 2016
    Inventors: Chee-Wee Liu, Hung-Chih Chang, Cheng-Yi Peng, Chih-Sheng Chang
  • Patent number: 9423015
    Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: August 23, 2016
    Assignee: Victory Industrial Corporation
    Inventors: Hung-Chih Chang, Szu-En Liu
  • Patent number: 9425250
    Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: August 23, 2016
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu, Samuel C. Pan
  • Patent number: 9406697
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: August 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chee-Wee Liu, Hung-Chih Chang, Cheng-Yi Peng, Chih-Sheng Chang
  • Publication number: 20160211276
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.
    Type: Application
    Filed: January 20, 2015
    Publication date: July 21, 2016
    Inventors: Chee-Wee Liu, Hung-Chih Chang, Cheng-Yi Peng, Chih-Sheng Chang
  • Publication number: 20160190233
    Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.
    Type: Application
    Filed: December 30, 2014
    Publication date: June 30, 2016
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu, Samuel C. Pan
  • Publication number: 20160141427
    Abstract: A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 19, 2016
    Inventors: Pin-Shiang Chen, Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan
  • Publication number: 20160141366
    Abstract: Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a first ferroelectric layer. A source/channel/drain stack is formed over the first gate stack, wherein the source/channel/drain stack comprises one or more 2D material layers. A second gate stack is formed over the source/channel/drain stack, wherein the second gate stack comprises a second ferroelectric layer.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 19, 2016
    Applicants: NATIONAL TAIWAN UNIVERSITY, TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Der-Chuan Lai, Pin-Shiang Chen, Hung-Chih Chang, Chee-Wee Liu, Samuel C. Pan
  • Publication number: 20160118479
    Abstract: A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode.
    Type: Application
    Filed: January 7, 2016
    Publication date: April 28, 2016
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu
  • Patent number: 9240478
    Abstract: A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: January 19, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu
  • Publication number: 20160010742
    Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.
    Type: Application
    Filed: December 31, 2014
    Publication date: January 14, 2016
    Inventors: Hung-Chih CHANG, Szu-En Liu
  • Publication number: 20160010741
    Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.
    Type: Application
    Filed: December 31, 2014
    Publication date: January 14, 2016
    Inventors: Hung-Chih CHANG, Szu-En Liu
  • Publication number: 20160010743
    Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.
    Type: Application
    Filed: December 31, 2014
    Publication date: January 14, 2016
    Inventors: Hung-Chih CHANG, Szu-En Liu
  • Publication number: 20150303299
    Abstract: A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode.
    Type: Application
    Filed: April 16, 2014
    Publication date: October 22, 2015
    Applicants: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Hung-Chih Chang, Pin-Shiang Chen, Chee-Wee Liu
  • Publication number: 20150214794
    Abstract: The present invention relates to a rotor for an alternator, including a first claw pole element and an opposite second claw pole element and a plurality of N-pole claw-shaped bodies of the first claw pole element and a plurality of S-pole claw-shaped bodies of the second claw pole element being respectively adjacent to each other and spaced apart; wherein a permanent magnet is fixed between each of the N-pole claw-shaped bodies of the first claw pole element and each of the S-pole claw-shaped bodies of the second claw pole element which are adjacent to each other, to increase a magnetic field generated after the rotor is electromagnetically conducted and decrease magnetic leakage between the two pole elements, thereby increasing generating capacity of the alternator.
    Type: Application
    Filed: January 29, 2014
    Publication date: July 30, 2015
    Applicant: Victory Industrial Corporation
    Inventors: Hung-Chih CHANG, Ping-Feng Tsai
  • Patent number: 8820502
    Abstract: A one-way pulley for an alternator assembly includes an outer wheel, a clutch assembly, and a spindle. The outer wheel includes an axial hole extending longitudinally therethrough, whereby the axial hole forms an inner surface of the outer wheel. The clutch assembly is disposed within the axial hole of the outer wheel and includes a housing with an outer surface for contacting the inner surface of the outer wheel, and a plurality of rolling elements operable to extend into a pivot hole. The spindle is disposed within the pivot hole of the clutch assembly, the spindle having an outer surface for contacting the plurality of rolling elements and a coupling portion for connecting to a rotor shaft. The outer surface of the clutch assembly housing is fixedly attached to the inner surface of the outer wheel.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: September 2, 2014
    Assignee: Victory Industrial Corporation
    Inventors: Hung-Chih Chang, Siu-En Liu
  • Publication number: 20140230889
    Abstract: A solar cell, a method for manufacturing the same and a solar cell module are described. The solar cell includes a substrate of a second conductivity type, an emitter layer, a first oxide layer, an auxiliary passivation layer, a back surface field layer, a second oxide layer, a first electrode and a second electrode. The substrate includes a first surface and a second surface opposite each other. The emitter layer, the first oxide layer and the auxiliary passivation layer are sequentially disposed on the first surface. Materials of the auxiliary passivation layer and the first oxide layer are different. The back surface field layer and the second oxide layer are sequentially disposed on the second surface. The first electrode is disposed above the first surface and contacts with the emitter layer. The second electrode is disposed above the second surface and contacts with the back surface field layer.
    Type: Application
    Filed: March 18, 2013
    Publication date: August 21, 2014
    Applicant: MOTECH INDUSTRIES, INC.
    Inventor: Hung-Chih CHANG
  • Publication number: 20110110173
    Abstract: A signal generating circuit is employed for generating a control in order to control operations of one of a controller and at least a storage unit of a related storage apparatus controlled by the controller. The signal generating circuit includes a voltage inputting unit and a voltage detection unit. The voltage detection unit rapidly switches a voltage level of the control signal according to a voltage to be detected which is generated by the voltage inputting unit. As a result, data damage due to unexpected operations performed by the controller during the power-off period can be avoided.
    Type: Application
    Filed: March 4, 2010
    Publication date: May 12, 2011
    Inventors: Hung-Chih Chang, Ming-Tsung Li, Chen-Jung Lee, Che-Hung Lai