Abstract: A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.

Abstract: An object counting method having route distribution property is applied to an image processing device. The object counting method includes steps of recording an initial position datum and a final position datum of any object moving within an image frame, setting at least one detection line inside the image frame, determining whether a connection line between the initial position datum and the final position datum moves across the detection line, and drawing an object distribution diagram by relation between an amount of the object moving across the detection line and its detective period.

Abstract: An output terminal for a vehicle AC generator is provided. The output terminal comprises: a bolt and a cylinder nut. The bolt has outer threads and is inserted through a through hole of a rectifier unit. The cylinder nut has inner threads, which engage with the outer threads of the bolt so that the cylinder nut surrounds the outer circumference of the bolt and fixes the bolt to the rectifier unit. The cylinder nut has a recess in its outer circumference. An insulating sleeve may be provided on the output terminal. The insulating sleeve has at least an internal protrusion for being received in and engaged with the recess of the cylinder nut.

Abstract: The present invention relates to a rectifier unit of an AC generator for a vehicle. The rectifier unit comprises: a connection unit, a positive cooling fin and a negative cooling fin. The positive cooling fin is coupled to a first portion of the connection unit. The negative cooling fin comprises two separate negative cooling members. Each of the two negative cooling members is coupled to a second portion of the connection unit. The first portion of the connection unit and the second portion of the connection unit are of a different height. The connection unit is disposed above the positive cooling fin, and the positive cooling fin is disposed above the negative cooling fin.

Abstract: An output terminal for a vehicle AC generator is provided. The output terminal comprises: a bolt and a cylinder nut. The bolt has outer threads and is inserted through a through hole of a rectifier unit. The cylinder nut has inner threads, which engage with the outer threads of the bolt so that the cylinder nut surrounds the outer circumference of the bolt and fixes the bolt to the rectifier unit. The cylinder nut has a recess in its outer circumference. An insulating sleeve may be provided on the output terminal. The insulating sleeve has at least an internal protrusion for being received in and engaged with the recess of the cylinder nut.

Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.

Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.

Abstract: A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.

Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.

Abstract: Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a first ferroelectric layer. A source/channel/drain stack is formed over the first gate stack, wherein the source/channel/drain stack comprises one or more 2D material layers. A second gate stack is formed over the source/channel/drain stack, wherein the second gate stack comprises a second ferroelectric layer.

Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.

Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.

Abstract: A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [?2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.

Abstract: The present invention relates to a pulley for an alternator, and in particular, to a pulley applicable to an automotive alternator. The pulley effectively mitigates the problem that a belt and a tension pulley of an alternator vibrate because a rotation speed of a vehicle engine changes, thereby improving the overall operating efficiency of the alternator and the service life of the working belt and the tension pulley.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.