Patents by Inventor Hung-Yueh Chen
Hung-Yueh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11925035Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.Type: GrantFiled: October 26, 2022Date of Patent: March 5, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
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Patent number: 11895926Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.Type: GrantFiled: November 3, 2020Date of Patent: February 6, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Patent number: 11895848Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.Type: GrantFiled: May 22, 2022Date of Patent: February 6, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ya-Huei Tsai, Rai-Min Huang, Yu-Ping Wang, Hung-Yueh Chen
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Publication number: 20240015700Abstract: The invention provides a method for multi-paging of a user equipment (UE) in a network; the network may be a wireless cellular network, and may comprise a plurality of cells. The method may be executed by the UE, and may comprise a multi-paging procedure. The multi-paging procedure may comprise: when the UE camps on a serving cell of the plurality of cells, checking whether a non-serving cell paging message is received on a non-serving cell of the plurality of cells, with the non-serving cell being different from the serving cell.Type: ApplicationFiled: April 12, 2023Publication date: January 11, 2024Inventors: Hung-Yueh CHEN, Hung-Wei SHIH, Byeng Hyun Kim, JUNG SHUP SHIN, Kyung Hyun Ahn, Amit Kumar Shukla
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Publication number: 20230403941Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.Type: ApplicationFiled: August 27, 2023Publication date: December 14, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Patent number: 11800723Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a first diffusion region and a second diffusion region extending along a first direction on a substrate, a first contact plug extending along a second direction from the first diffusion region to the second diffusion region on the substrate, a first gate pattern and a second gate pattern extending along the second direction adjacent to one side of the first contact plug, and a third gate pattern and a fourth gate pattern extending along the second direction adjacent to another side of the first contact plug.Type: GrantFiled: September 13, 2020Date of Patent: October 24, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: I-Fan Chang, Hung-Yueh Chen, Rai-Min Huang, Jia-Rong Wu, Yu-Ping Wang
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Publication number: 20230329006Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.Type: ApplicationFiled: June 8, 2023Publication date: October 12, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen, Wei Chen
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Patent number: 11778920Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.Type: GrantFiled: May 5, 2022Date of Patent: October 3, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Publication number: 20230292627Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.Type: ApplicationFiled: May 23, 2023Publication date: September 14, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Yi-Yu Lin, Ching-Hua Hsu, Hung-Yueh Chen
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Patent number: 11737285Abstract: A memory array includes at least one strap region having therein a plurality of source line straps and a plurality of word line straps, and at least two sub-arrays having a plurality of staggered, active magnetic storage elements. The at least two sub-arrays are separated by the strap region. A plurality of staggered, dummy magnetic storage elements is disposed within the strap region.Type: GrantFiled: March 15, 2021Date of Patent: August 22, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Kun-I Chou, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Hung-Yueh Chen
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Publication number: 20230263067Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is adjacent to the top electrode and the MTJ and on the second IMD layer and a top surface of the cap layer is higher than a top surface of the first IMD layer.Type: ApplicationFiled: April 18, 2023Publication date: August 17, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Patent number: 11723295Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.Type: GrantFiled: December 15, 2021Date of Patent: August 8, 2023Assignee: United Microelectronics Corp.Inventors: Hai Tao Liu, Li Li Ding, Yao-Hung Liu, Guoan Du, Qi Lu Li, Chunlei Wan, Yi Yu Lin, Yuchao Chen, Huakai Li, Hung-Yueh Chen
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Patent number: 11715499Abstract: A MRAM structure, which is provided with multiple source lines between active areas, each source line has multiple branches electrically connecting with the active areas at opposite sides in alternating arrangement. Multiple word lines traverse through the active areas to form transistors. Multiple storage units are disposed between the word lines on the active areas in staggered array arrangement, and multiple bit lines electrically connect with storage units on corresponding active areas, wherein each storage cell includes one of the storage unit, two of the transistors respectively at both sides of the storage unit, and two branches of the source line.Type: GrantFiled: April 7, 2021Date of Patent: August 1, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hung-Yueh Chen, Kun-I Chou, Jing-Yin Jhang, Hui-Lin Wang, Yu-Ping Wang
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Patent number: 11716860Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.Type: GrantFiled: May 26, 2020Date of Patent: August 1, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen, Wei Chen
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Publication number: 20230240151Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.Type: ApplicationFiled: March 17, 2023Publication date: July 27, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu- Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Patent number: 11700775Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.Type: GrantFiled: November 5, 2020Date of Patent: July 11, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Yi-Yu Lin, Ching-Hua Hsu, Hung-Yueh Chen
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Publication number: 20230200257Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.Type: ApplicationFiled: February 15, 2023Publication date: June 22, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
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Patent number: 11665973Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack for forming a first MTJ; forming a first inter-metal dielectric (IMD) layer around the first MTJ; and performing a second patterning process to remove the first MTJ for forming a second MTJ and a third MTJ.Type: GrantFiled: May 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
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Patent number: 11637233Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.Type: GrantFiled: November 1, 2020Date of Patent: April 25, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Publication number: 20230106156Abstract: A semiconductor device includes a first metal interconnection on a substrate, a first inter-metal dielectric (IMD) layer around the first metal interconnection, an electromigration enhancing layer on the first metal interconnection, a second IMD layer on and around the electromigration enhancing layer, and a second metal interconnection on the electromigration enhancing layer.Type: ApplicationFiled: December 5, 2022Publication date: April 6, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang