Abstract: A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.

Abstract: A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.

Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.

Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.