Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: An electrical stimulation system according to an embodiment may comprise: a catheter having a long and thin tubular shape; an electrode disposed at one end of the catheter and inserted into a target portion; an electrical stimulator for generating electrical stimulation to be applied onto the target portion by the electrode; and a control part for controlling an electrical pulse of the electrical stimulator to change the electrical stimulation applied onto the target portion, wherein the electrode applies electrical stimulation in a state where a distal end of the electrode is enlarged and fixed to a target portion.

Abstract: The present invention relates to an endoscope suturing device and, more specifically, to an endoscopic suturing device capable of suturing a range of incisions by using an endoscope. According to the present invention, a wide range of incisions can be continuously sutured with high suturing power by using an endoscope, the suturing procedure time can be shortened, and a suturing method using a suture can minimize leftover foreign substances in the body, and thus can prevent side effects caused by the foreign substances. In addition, by using an endoscope, suturing with high-reliability is possible regardless of the range of suture areas, and thus the present invention can be used for simple suturing procedures and various internal surgeries such as gastrointestinal reduction surgery and NOTES, which uses a natural orifice.

Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

Abstract: An electrical stimulation device according to an embodiment includes: an elongated element having working channels; a plurality of electrical stimulators each including a longitudinal member extending along the longitudinal direction of the working channel, and a tip which is installed at the distal end of the longitudinal member and configured to apply electrical stimulation to a subject; and a control unit that independently controls the plurality of electrical stimulators to vary the range of electric stimulation applied to the subject.

Abstract: A stimulator for a digestive organ includes a case, a substrate member disposed in the case, and an electrode member connected to the substrate member and extending to protrude outwardly from the case. The electrode member may have a shape of a wire and may be configured to provide an electrical stimulation in a state of being inserted and fixed at a predetermined location within a digestive organ.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: A stimulator for a digestive organ includes a case, a substrate member disposed in the case, and an electrode member connected to the substrate member and extending to protrude outwardly from the case. The electrode member may have a shape of a wire and may be configured to provide an electrical stimulation in a state of being inserted and fixed at a predetermined location within a digestive organ.

Abstract: The present invention relates to a therapeutic device which comprises: an endoscope channel; and an electrode that can be inserted into a human body through the endoscope channel, wherein the electrode destroys a target cell in the human body through voltage application, and the electrode includes a first optical fiber and a second optical fiber for detecting the degree of destruction of the target cell through impedance measurement. In addition, the present invention relates to a therapeutic device employing an endoscope-interworking electrode which comprises: an endoscope channel; and a catheter that can be inserted into a human body through the endoscope channel, wherein the catheter comprises a perforated portion provided on an end thereof, which is inserted into the human body, and a plurality of electrodes that can protrude from the end of the catheter through the perforated portion to penetrate a target cell.

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.