Abstract: Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

Abstract: The present invention relates to powder detergent granules that are substantially free of a water-insoluble component such as zeolite or silica, a method for manufacturing the powder detergent granules and a copolymer having various properties useful as a detergent component. The powder detergent granules of the present invention are substantially free of a water-insoluble component, and thus exhibit good solubility and washing performance (stain removal performance) in cold water, do not leave residue after laundry, and reduce the likelihood of a caking phenomenon during manufacture and storage. And, the powder detergent granules of the present invention are substantially free of zeolite or silica that absorbs a liquid component, but are capable of accommodating a considerable amount of liquid surfactant.

Abstract: The present invention relates to powder detergent granules that are substantially free of a water-insoluble component such as zeolite or silica, a method for manufacturing the powder detergent granules and a copolymer having various properties useful as a detergent component. The powder detergent granules of the present invention are substantially free of a water-insoluble component, and thus exhibit good solubility and washing performance (stain removal performance) in cold water, do not leave residue after laundry, and reduce the likelihood of a caking phenomenon during manufacture and storage. And, the powder detergent granules of the present invention are substantially free of zeolite or silica that absorbs a liquid component, but are capable of accommodating a considerable amount of liquid surfactant.

Abstract: Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

Abstract: Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

Abstract: Disclosed herein is a method for forming a light-emitting layer on an industrial scale via chemical vapor deposition or molecular layer deposition. According to the method, a metal-containing material and an 8-hydroxyquinoline derivative having stable vapor pressure characteristics are used as raw materials and are vaporized.

Abstract: Provided is a resistor element including a resistor formed on an insulating layer, and a complementary resistor formed on the insulating layer and insulated from the resistor, the complementary resistor electrically connected in parallel to the resistor, wherein a resistance of the complementary resistor is complementary to a resistance of the resistor. A semiconductor integrated circuit device including the resistor element, and methods of fabricating the resistor element and the semiconductor integrated circuit device are also provided.

Abstract: A gate having sidewalls is formed on an integrated circuit substrate. A barrier layer spacer is formed on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is formed on the portion of the barrier layer spacer protruding from the sidewalls of the gate. Related devices are also provided.

Abstract: Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

Abstract: A gate having sidewalls is formed on an integrated circuit substrate. A barrier layer spacer is formed on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is formed on the portion of the barrier layer spacer protruding from the sidewalls of the gate. Related devices are also provided.