Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: A method for preparing a negative electrode active material. The method includes disposing a pitch on graphite particles and performing a first heat treatment on the graphite particles to form a first carbon coating layer, and disposing a liquid resin on the first carbon coating layer and performing a second heat treatment on the graphite particles to form a second carbon coating layer.

Abstract: A hydrogel includes: a partially or fully ionized cationic polymer and at least one selected from the group consisting of a partially or fully ionized anionic polymer and a low molecular weight compound having two or more anionic groups; or a partially or fully ionized anionic polymer and at least one selected from the group consisting of a partially or fully ionized cationic polymer and a low molecular weight compound having two or more cationic groups; and water. The hydrogel can be used for for producing clay with viscoelastic properties.

Abstract: Provided is an active material for negative electrode including porous silicon-based particles and carbon particles, wherein the carbon particles include fine carbon particles and coarse carbon particles respectively having different average particle diameters. Since an active material for negative electrode according to an embodiment of the present invention includes porous silicon-based particles as well as fine and coarse carbon particles respectively having different average particle diameters, the contact between the porous silicon-based particles and the carbon particles may be increased. As a result, lifetime characteristics of a lithium secondary battery may be further improved.

Abstract: The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by SiOa (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.

Abstract: The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by SiOa (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.

Abstract: The present invention provides an optical device including a spectral filter and an optical detection unit for detecting light passing through the spectral filter. A band-limited filter is provided on the path of light.

Abstract: The present invention relates to a superdirective speaker, and particularly, to a superdirective speaker in which speaker units are disposed and aligned adjacent to one another, and sound outputted from the speaker units overlaps and propagates stepwise, such that the sound may be clearly transmitted over a long distance.

Abstract: The present invention provides an optical device including a spectral filter and an optical detection unit for detecting light passing through the spectral filter. A band-limited filter is provided on the path of light.

Abstract: A negative electrode active material particle and a method for preparing the same are provided. The negative electrode active material particle includes SiOx (0<x?2) and Li2Si2O5, and includes less than 2 wt % of Li2SiO3 and Li4SiO4.

Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: A negative electrode active material particle and a method for preparing the same are provided. The negative electrode active material particle includes SiOx (0<x?2) and Li2Si2O5, and includes less than 2 wt % of Li2SiO3 and Li4SiO4.

Abstract: A negative electrode active material of the present invention includes a core containing silicon-based nanoparticles and polymer carbides distributed on the nanoparticles, wherein the core has a size of 30-300 nm, and such a negative electrode active material is prepared using a method including dispersing a suspension in which silicon-based nanoparticles and water-soluble polymer are added to a solvent using ultrasonic waves; and preparing a core including the silicon-based nanoparticles having the polymer carbides on the surface by carbonizing the water-soluble polymer. As a result, a negative electrode active material having a significantly low volume expansion rate compared with general non-carbon-based negative electrode active materials, and having excellent electric conductivity may be provided.

Abstract: An electric hydraulic pump for a transmission includes: a motor including a motor cover, a motor case coupled with the motor cover, and a stator and a rotor disposed within the motor cover and the motor case; and a pump including a pump case forming a pump chamber, and a gear rotor which is disposed within the pump chamber, connected with the rotor through a motor shaft and receives rotational power of the motor. In particular, a plurality of oil circulation holes are formed in the motor cover and a connecting hole is formed in the motor cover corresponding to the pump case, and an oil flow channel is formed within the pump case for connecting the connecting hole and an oil inlet of the pump chamber.

Abstract: The present invention relates to a silicon-based active material-polymer composite which is secondary particles in which silicon-based particles as primary particles and conductive polymer particles having a modulus of elasticity of 10 Pa to 100 Pa at a temperature of 20° C. to 40° C. are uniformly mixed. The uniform mixture with the elastic conductive polymer particles provides for a buffering action against the stress generated by volumetric changes of the silicon-based particles.

Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.