Abstract: An electrochemical mirror includes a first transparent electrode; a second transparent electrode disposed to be spaced apart from the first transparent electrode; and an electrolyte layer disposed between the first transparent electrode and the second transparent electrode and including an electrolyte solution, the electrolyte solution including a compound having a sulfonate functional group or a derivative compound having the same, as an electrolyte solution additive.

Abstract: An aperture system of an electron beam apparatus includes a plurality of apertures each including a first area including at least one through hole allowing an electron beam to pass therethrough and a second area disposed outside the first area and including first and second alignment keys, wherein two apertures, among the plurality of apertures, include the first alignment keys arranged in mutually overlapping positions and having the same size, and an aperture, excluding the two apertures, among the plurality of apertures, includes the second alignment keys arranged to overlap the first alignment keys and having an area larger than an area of the first alignment keys.

Abstract: A luminance correction system includes an image pickup device configured to pick up a test image and generate pickup data, a parameter calculation device configured to calculate a first target luminance that is a maximum luminance of a reference area in a display panel and a detected maximum luminance that is a luminance of a correction target sub-pixel based on the pickup data with respect to a maximum grayscale, determine a second target luminance by correcting the first target luminance, and calculate correction parameters, and a display device including the display panel, the display device configured to compensate the input grayscale of the correction target sub-pixel to a target grayscale based on the correction parameters and generate a data voltage by adjusting upward a gamma voltage corresponding to the target grayscale.

Abstract: Disclosed herein are a thermoplastic resin composition and a molded article produced from the thermoplastic resin composition. The thermoplastic resin composition includes: a polycarbonate resin; a rubber-modified vinyl graft copolymer; inorganic fillers comprising talc and wollastonite; maleic anhydride-modified olefin wax; and a phosphorus compound represented by the following Formula 1, wherein a weight ratio of the talc to the wollastonite ranges from about 1:0.1 to about 1:0.9, and a weight ratio of the talc to the phosphorus compound ranges from about 1:0.005 to about 1:0.05: wherein R1 and R2 are the same or different and are each independently a hydrogen atom or a C1 to C10 alkyl group and R3 is a C10 to C30 alkyl group. The thermoplastic resin composition can have excellent properties in terms of impact resistance, stiffness, dimensional stability, appearance, and balance therebetween.

Abstract: The semiconductor memory device includes a stacked structure including conductive patterns and interlayer insulating patterns which are alternately stacked, a through-hole configured to pass through the stacked structure; a channel pattern formed inside the through-hole, a first capping conductive pattern formed on the channel pattern, a second capping conductive pattern formed on a sidewall of the first capping conductive pattern and surrounding the first capping conductive pattern, and a contact plug formed on the first capping conductive pattern and the second capping conductive pattern.

Abstract: Provided here may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first source seed layer, a second source seed layer disposed over the first source seed layer at a position spaced apart from the first source seed layer with a source area interposed between the first source seed layer and the second source seed layer, cell plugs configured to penetrate through the second source seed layer and extend into the source area, the cell plugs being disposed at positions spaced apart from the first source seed layer. The semiconductor device may also include an interlayer source layer configured to fill the source area.

Abstract: Disclosed herein are a user device, server, and computer program for determining vision information. The computer program is stored in a computer-readable storage medium including encoded instructions. When executed by one or more processors of a computer system, the computer program causes the one or more processors to perform operations, the operations comprising the operations of: allowing the operation of a lighting unit to be controlled in response to a photographing request; allowing a photographing unit to acquire an image of a pupil of a user in response to the photographing request; allowing intensity profile information regarding the diameter of the pupil to be acquired from the image of the pupil; allowing crescent length information to be determined from the intensity profile information; and allowing the vision information of the user to be determined at least partially based on the crescent length information.

Abstract: Disclosed herein is a method for preparing ultrafine titanium carbonitride powder under a relatively low temperature condition that obviates a grinding process. This method includes the steps of: a mixing step for contacting titanium dioxide (TiO2), calcium (Ca) and carbon (C) under an inert atmosphere, a synthesis step for reacting the resultant mixture by heating at a temperature of about 600-1500° C. or lower under a nitrogen atmosphere; and a washing step for removing calcium oxide by washing this mixture.

Abstract: Provided here may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first source seed layer, a second source seed layer disposed over the first source seed layer at a position spaced apart from the first source seed layer with a source area interposed between the first source seed layer and the second source seed layer, cell plugs configured to penetrate through the second source seed layer and extend into the source area, the cell plugs being disposed at positions spaced apart from the first source seed layer. The semiconductor device may also include an interlayer source layer configured to fill the source area.

Abstract: Disclosed herein are a user device and a computer program stored in a computer-readable medium for controlling display. The user device includes a computer program stored in a computer-readable storage medium, and the computer program is executable by at least one processor and includes instructions adapted to cause the at least one processor to perform operations. The operations include the operations of: M acquiring eye examination information of a user; determining display optimization information for the user at least partially based on user information including the eye examination information; and determining to adjust display settings of at least one user-related user device at least partially based on the determined display optimization information.

Abstract: An electrochemical mirror includes a first transparent electrode; a second transparent electrode disposed to be spaced apart from the first transparent electrode; and an electrolyte layer disposed between the first transparent electrode and the second transparent electrode and including an electrolyte solution, the electrolyte solution including a compound having a sulfonate functional group or a derivative compound having the same, as an electrolyte solution additive.

Abstract: Provided herein is a semiconductor device. The semiconductor device may include a substrate, conductive patterns, and a pipe gate. The substrate may have first and second regions arranged in a first direction and a third region arranged between the first and second regions. The conductive patterns may be stacked on the substrate to be spaced apart from each other, and may extend from the first region to the second region. The pipe gate may be arranged between the conductive patterns and the substrate to overlap the first region. The pipe gate may not be overlapped with the third region.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate on which a contact region and a cell region are defined, sub-patterns formed in the contact region, on the substrate, and insulating patterns and conductive patterns stacked alternately along the sub-patterns.

Abstract: A semiconductor device includes a first stack including a plurality of alternating layers of first interlayer insulating layers and first conductive patterns; a second stack including a plurality of alternating layers of second conductive patterns and second interlayer insulating layers, the second stack being positioned above the first stack; a plurality of pillar-structures each pillar structure passing through the first and second stacks; and a ring pattern layer disposed between the first and second stacks, the ring pattern layer comprising a plurality of ring patterns, each ring pattern surrounding each pillar-structure.

Abstract: A semiconductor device is provided. The semiconductor device may include stacks including conductive layers and insulating layers. The conductive layers and insulating layers may be alternately stacked. The semiconductor device may include semiconductor patterns passing through the stacks. The semiconductor device may include plug patterns located on the semiconductor patterns and protruding compared to the stacks. The semiconductor device may include insulating patterns located on the stacks and the plug patterns and each including an edge area having a height at a level lower than a central area. The semiconductor device may include slit insulating layers located between the stacks and between the insulating patterns.

Abstract: Disclosed is a semiconductor device, including: a first pipe gate; a second pipe gate on the first pipe gate; a stacked structure on the second pipe gate; a first channel layer including a first pipe channel layer positioned within the first pipe gate and first cell channel layers connected to the first pipe channel layer; a second channel layer including a second pipe channel layer positioned within the second pipe gate, and second cell channel layers connected to the second pipe channel layer; and a slit insulating layer passing through the stacked structure and positioned between the adjacent second cell channel layers, wherein the second pipe channel layer has a body portion and a protrusion portion extending below the body portion at a position below the slit insulating layer.

Abstract: Disclosed herein is a method for preparing ultrafine titanium carbonitride powder under a relatively low temperature condition that obviates a grinding process. This method includes the steps of: a mixing step for contacting titanium dioxide (TiO2), calcium (Ca) and carbon (C) under an inert atmosphere, a synthesis step for reacting the resultant mixture by heating at a temperature of about 600-1500° C. or lower under a nitrogen atmosphere; and a washing step for removing calcium oxide by washing this mixture.

Abstract: Provided herein is a semiconductor device. The semiconductor device may include a substrate, conductive patterns, and a pipe gate. The substrate may have first and second regions arranged in a first direction and a third region arranged between the first and second regions. The conductive patterns may be stacked on the substrate to be spaced apart from each other, and may extend from the first region to the second region. The pipe gate may be arranged between the conductive patterns and the substrate to overlap the first region. The pipe gate may not be overlapped with the third region.

Abstract: A luminance correction system includes an image pickup device configured to pick up a test image and generate pickup data, a parameter calculation device configured to calculate a first target luminance that is a maximum luminance of a reference area in a display panel and a detected maximum luminance that is a luminance of a correction target sub-pixel based on the pickup data with respect to a maximum grayscale, determine a second target luminance by correcting the first target luminance, and calculate correction parameters, and a display device including the display panel, the display device configured to compensate the input grayscale of the correction target sub-pixel to a target grayscale based on the correction parameters and generate a data voltage by adjusting upward a gamma voltage corresponding to the target grayscale.

Abstract: Disclosed is a semiconductor device, including: a first pipe gate; a second pipe gate on the first pipe gate; a stacked structure on the second pipe gate; a first channel layer including a first pipe channel layer positioned within the first pipe gate and first cell channel layers connected to the first pipe channel layer; a second channel layer including a second pipe channel layer positioned within the second pipe gate, and second cell channel layers connected to the second pipe channel layer; and a slit insulating layer passing through the stacked structure and positioned between the adjacent second cell channel layers, wherein the second pipe channel layer has a body portion and a protrusion portion extending below the body portion at a position below the slit insulating layer.