Patents by Inventor Hyun-jae Song
Hyun-jae Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11270881Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.Type: GrantFiled: April 16, 2019Date of Patent: March 8, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kaoru Yamamoto, Chang-Hyun Kim, Hyun-Jae Song, Keun-Wook Shin, Hyeon-Jin Shin, Sung-Joo An, Chang-Seok Lee, Kee-Young Jun, Geun-O Jeong, Jang-Hee Lee
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Publication number: 20200075324Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.Type: ApplicationFiled: April 16, 2019Publication date: March 5, 2020Inventors: Kaoru YAMAMOTO, Chang-Hyun KIM, Hyun-Jae SONG, Keun-Wook SHIN, Hyeon-Jin SHIN, Sung-Joo AN, Chang-Seok LEE, Kee-Young JUN, Geun-O JEONG, Jang-Hee LEE
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Patent number: 9525076Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.Type: GrantFiled: August 6, 2013Date of Patent: December 20, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-ho Lee, Hyun-jong Chung, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Jin-seong Heo
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Patent number: 9373685Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.Type: GrantFiled: February 14, 2014Date of Patent: June 21, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeon-jin Shin, Kyung-eun Byun, Hyun-jae Song, Seong-jun Park, David Seo, Yun-sung Woo, Dong-wook Lee, Jae-ho Lee, Hyun-jong Chung, Jin-seong Heo, In-kyeong Yoo
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Patent number: 9312368Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.Type: GrantFiled: July 17, 2014Date of Patent: April 12, 2016Assignee: Samsuung Electronics Co., LTD.Inventors: Jae-ho Lee, Kyung-eun Byun, Hyun-jae Song, Hyeon-jin Shin, Min-Hyun Lee, In-kyeong Yoo, Seong-jun Park
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Patent number: 9306021Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.Type: GrantFiled: April 3, 2014Date of Patent: April 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-jong Chung, David Seo, Seong-jun Park, Kyung-eun Byun, Hyun-jae Song, Hee-jun Yang, Jin-seong Heo
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Patent number: 9306005Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm?3, and a depletion width of less than or equal to 3 nm.Type: GrantFiled: December 11, 2013Date of Patent: April 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-eun Byun, Seong-jun Park, David Seo, Hyun-jae Song, Jae-ho Lee, Hyun-jong Chung, Jin-seong Heo
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Patent number: 9299789Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.Type: GrantFiled: July 16, 2013Date of Patent: March 29, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: David Seo, Ho-jung Kim, Hyun-jong Chung, Seong-jun Park, Kyung-eun Byun, Hyun-jae Song, Jin-seong Heo
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Patent number: 9281404Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.Type: GrantFiled: January 3, 2013Date of Patent: March 8, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-seong Heo, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hee-jun Yang, Hyun-jong Chung
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Patent number: 9214559Abstract: Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.Type: GrantFiled: October 24, 2012Date of Patent: December 15, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joo-ho Lee, Chang-seung Lee, Yong-sung Kim, Hyun-jae Song
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Patent number: 9184236Abstract: A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate.Type: GrantFiled: August 20, 2012Date of Patent: November 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: David Seo, Jin-seong Heo, Hyun-jong Chung, Hee-jun Yang, Seong-jun Park, Hyun-jae Song
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Patent number: 9166062Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.Type: GrantFiled: April 22, 2015Date of Patent: October 20, 2015Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB FoundationInventors: Jae-ho Lee, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hyung-cheol Shin, Jae-hong Lee, Hyun-jong Chung, Jin-seong Heo
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Patent number: 9136336Abstract: Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer.Type: GrantFiled: August 24, 2012Date of Patent: September 15, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-seong Heo, Seong-jun Park, Hyun-jong Chung, Hyun-jae Song, Hee-jun Yang, David Seo
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Publication number: 20150228804Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.Type: ApplicationFiled: April 22, 2015Publication date: August 13, 2015Applicant: Seoul National University R&DB FoundationInventors: Jae-ho LEE, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Hyung-cheol SHIN, Jae-hong LEE, Hyun-jong CHUNG, Jin-seong HEO
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Patent number: 9105556Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.Type: GrantFiled: May 31, 2013Date of Patent: August 11, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-seong Heo, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Jae-ho Lee, Hyun-jong Chung
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Patent number: 9064777Abstract: According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.Type: GrantFiled: August 22, 2012Date of Patent: June 23, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-Seong Heo, Hyun-jong Chung, Hyun-jae Song, Seong-jun Park, David Seo, Hee-jun Yang
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Patent number: 9053932Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.Type: GrantFiled: June 14, 2013Date of Patent: June 9, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Wook Lee, Hyeon-jin Shin, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Yun-sung Woo, Jae-ho Lee, Hyun-jong Chung, Jin-seong Heo
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Patent number: 9048310Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.Type: GrantFiled: August 12, 2013Date of Patent: June 2, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R & DB FOUNDATIONInventors: Jae-ho Lee, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hyung-cheol Shin, Jae-hong Lee, Hyun-jong Chung, Jin-seong Heo
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Patent number: 9040957Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.Type: GrantFiled: February 21, 2013Date of Patent: May 26, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jae-ho Lee, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hyung-cheol Shin, Jae-hong Lee, Hyun-jong Chung, Jin-seong Heo
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Publication number: 20150137074Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.Type: ApplicationFiled: July 17, 2014Publication date: May 21, 2015Inventors: Jae-ho LEE, Kyung-eun BYUN, Hyun-jae SONG, Hyeon-jin SHIN, Min-Hyun LEE, In-kyeong YOO, Seong-jun PARK