Abstract: There is provided an information storage apparatus including recording medium and a head. The recording medium has an electrode layer, a magnetic layer that is stacked on the electrode layer, and a wear-resistant thin film that is stacked on the magnetic layer. The head has a conductive probe for injecting charge to record information and sensing the charge injected into the recording medium to reproduce information in a state that the conductive probe contacts the recording medium. A magnetic medium, which is coated with a wear-resistant thin film, stores charges to record information and reproduce information using an electrostatic force. Thus, it is possible to stably store highly integrated information. Also, a probe contacts a recording medium to record and reproduce information at a high speed. Thus, sensitivity and resolution can be improved.

Abstract: Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.

Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.

Abstract: Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.

Abstract: A flat panel for a cathode ray tube for preventing a screen image from being shown concavely to a user or viewer includes a flat outer surface and a non-spherically formed inner surface, the non-spherically formed inner surface satisfying formula 1: y1?y2??(formula 1) wherein y1 represents a vertical distance between the outer surface and a refracted screen image on a central axis of the panel, and y2 represents a vertical distance between the outer surface and the refracted screen image in peripheral areas other than the central axis of the panel, and the panel has a high transmission ratio equal to or greater than about 60% for preventing degradation of luminance due to a difference in thickness between a central section and a peripheral section of the panel.

Abstract: An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.

Abstract: A method for processing data, in a wireless application protocol for wireless applications using Unstructured Supplementary Service Data (USSD), includes the steps of: (a) receiving data from an upper layer into a Wireless Datagram Protocol (WDP) layer; (b) storing the data received in the WDP layer in step (a) in a common buffer which is commonly used by the WDP layer and a USSD Dialogue Control Protocol (UDCP) layer; and (c) forming packets in the UDCP layer using the data stored in the common buffer in step (b), and then transmitting the packets through the USSD. According to the method, memories for the WDP layer and the UDCP layer, which is an adaptation layer for a Global System for Mobile communication (GSM) USSD bearer, are integrated into one, effectively reducing a required memory size compared to conventional methods in which the WDP layer and the UDCP layer use separate memories.

Abstract: A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.

Abstract: A method for processing data, in a wireless application protocol for wireless applications using Unstructured Supplementary Service Data (USSD), includes the steps of: (a) receiving data from an upper layer into a Wireless Datagram Protocol (WDP) layer; (b) storing the data received in the WDP layer in step (a) in a common buffer which is commonly used by the WDP layer and a USSD Dialogue Control Protocol (UDCP) layer; and (c) forming packets in the UDCP layer using the data stored in the common buffer in step (b), and then transmitting the packets through the USSD. According to the method, memories for the WDP layer and the UDCP layer, which is an adaptation layer for a Global System for Mobile communication (GSM) USSD bearer, are integrated into one, effectively reducing a required memory size compared to conventional methods in which the WDP layer and the UDCP layer use separate memories.

Abstract: A Lorentz force microscope and a method of measuring magnetic domains using Lorentz force are provided. The Lorentz force microscope includes: a conductive probe which is actuated by Lorentz force occurring due to the interaction between a magnetic field of the magnetic medium and current applied into the magnetic field; a bottom electrode which is prepared on one side of the magnetic medium, for charging the magnetic field with electricity; a scanner for supporting the magnetic medium on which the bottom electrode is prepared and actuating the magnetic medium when the conductive probe opposite to a record of the magnetic medium scans the record of the magnetic medium; and an information detector for controlling the scanner and detecting information on magnetization of the magnetic medium from motion components of the conductive probe.

Abstract: A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.

Abstract: A data storage apparatus adopting a time division multiplexing technique, and a data recording method and a data reproduction method both using the apparatus, are provided. In the data storage apparatus, a recording medium stores data, and a stage supports the recording medium. A scanner drives the stage, and a cantilever array composed of a plurality of cantilevers record data to and reproducing data from the recording medium in a data detecting sequence. A controller detects data by applying a scanner driving signal to the scanner and applying a voltage signal for data recording or a voltage modulation signal for data reproduction to the plurality of cantilevers. Controlling the plurality of cantilevers using a single controller enables a data storage apparatus to be driven with low power and reduced in its circuit size. Installation of a pseudo-differential capacitor ensures high sensitivity.

Abstract: Provided are an apparatus and a method for reproducing data using capacitance. The apparatus includes a tip, a cantilever, a positioning portion, a power supply, an electrostatic force measuring portion, and a controller. The tip contacts a recording medium on which data is recorded by a bit. The cantilever is made of conductive material and has a free end for supporting the tip. The positioning portion moves the cantilever so as to determine a position of the tip on the recording medium. The power supply is connected between the recording medium and the cantilever in order to apply a voltage to the recording medium and the cantilever so as to generate an electrostatic force therebetween. The electrostatic force measuring portion measures the electrostatic force generated between the recording medium and the cantilever. The controller determines a local capacitance of the recording medium from the electrostatic force measured by the electrostatic force measuring portion.

Abstract: There is provided an information storage apparatus including recording medium and a head. The recording medium has an electrode layer, a magnetic layer that is stacked on the electrode layer, and a wear-resistant thin film that is stacked on the magnetic layer. The head has a conductive probe for injecting charge to record information and sensing the charge injected into the recording medium to reproduce information in a state that the conductive probe contacts the recording medium. A magnetic medium, which is coated with a wear-resistant thin film, stores charges to record information and reproduce information using an electrostatic force. Thus, it is possible to stably store highly integrated information. Also, a probe contacts a recording medium to record and reproduce information at a high speed. Thus, sensitivity and resolution can be improved.

Abstract: A Lorentz force microscope and a method of measuring magnetic domains using Lorentz force are provided. The Lorentz force microscope includes: a conductive probe which is actuated by Lorentz force occurring due to the interaction between a magnetic field of the magnetic medium and current applied into the magnetic field; a bottom electrode which is prepared on one side of the magnetic medium, for charging the magnetic field with electricity; a scanner for supporting the magnetic medium on which the bottom electrode is prepared and actuating the magnetic medium when the conductive probe opposite to a record of the magnetic medium scans the record of the magnetic medium; and an information detector for controlling the scanner and detecting information on magnetization of the magnetic medium from motion components of the conductive probe.

Abstract: Provided is an information storage apparatus using a semiconductor probe. The information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, It is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.

Abstract: A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.

Abstract: A faceplate panel for a cathode ray tube includes an exterior surface having a substantially flat shape, and an interior surface having a concave shape. The interior surface curves in a direction toward the flat exterior surface with a diagonal curvature radius Rp satisfying the following condition: 1.2R ≦Rp≦8R, where R=1.767×the diagonal length of the effective screen of the panel. Furthermore, a peripheral thickness t of the faceplate panel at the diagonal end of the effective screen satisfies the following condition: B≦t≦A, where B is the peripheral thickness of the panel at the diagonal end of the effective screen when a diagonal curvature radius Rp of the interior surface is 8R, and A is the peripheral thickness of the panel on the diagonal end of the effective screen when a ratio of the light transmission at the peripheral portion of the diagonal end of the effective screen to the light transmission at the central portion of the effective screen is 0.85.

Abstract: A flat panel for a cathode ray tube for preventing a screen image from being shown concavely to a user or viewer includes a flat outer surface and a non-spherically formed inner surface, the non-spherically formed inner surface satisfying formula 1:

Abstract: A cathode ray tube for multimedia includes a shadow mask having a plurality of beam-guide apertures. Each of the beam-guide apertures has a stripe shape and the ratio of a horizontal length of an effective screen to a horizontal pitch of the beam-guide apertures in the center of the shadow mask is in the range of 1:8.81×10−4 to 1:1.23×10−3. The ratio of the horizontal pitch of the beam-guide apertures in the center of the shadow mask to the thickness of the shadow mask is in the range of 1:0.25 to 1:0.56.