Patents by Inventor Hyun Sik NOH

Hyun Sik NOH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12255075
    Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: March 18, 2025
    Assignees: SK hynix Inc., Merck Patent GmbH
    Inventors: Jae Chul Lee, Hyun Sik Noh, Dong Kyun Lee, Eun Ae Jung, Kyoung-Mun Kim, Jooyong Kim, Younghun Byun, Byeong Il Yang, Changhyun Jin
  • Publication number: 20240079249
    Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 7, 2024
    Inventors: Jae Chul LEE, Hyun Sik NOH, Dong Kyun LEE, Eun Ae JUNG, Kyoung-Mun KIM, Jooyong KIM, Younghun BYUN, Byeong Il YANG, Changhyun JIN
  • Patent number: 11591691
    Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: February 28, 2023
    Assignees: EGTM CO., LTD., SK HYNIX INC.
    Inventors: Geun Su Lee, Jae Min Kim, Ha Na Kim, Woong Jin Choi, Eun Ae Jung, Dong Hyun Lee, Myung Soo Lee, Ji Won Moon, Dong Hak Jang, Hyun Sik Noh
  • Publication number: 20210130954
    Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.
    Type: Application
    Filed: July 24, 2020
    Publication date: May 6, 2021
    Applicant: EUGENETECH MATERIALS CO., LTD.
    Inventors: Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Eun Ae JUNG, Dong Hyun LEE, Myung Soo LEE, Ji Won MOON, Dong Hak JANG, Hyun Sik NOH