Abstract: A method for fabricating a semiconductor device includes forming a fuse over a substrate, the fuse having a barrier layer, a metal layer, and an anti-reflective layer stacked, selectively removing the anti-reflective layer, forming an insulation layer over a whole surface of the resultant structure including the fuse, and performing repair-etching such that part of the insulation layer remains above the fuse.

Abstract: A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer along a surface of the trench, forming an insulation layer having an etch selectivity ratio different from that of the liner oxide layer over the liner oxide layer, forming a spin on dielectric (SOD) oxide layer to fill a portion of the trench over the insulation layer, and forming a high density plasma (HDP) oxide layer for filling the remaining a portion of the trench.

Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a first recess having a micro trench, etching the substrate disposed under the first recess to form a second recess having a profile substantially vertical and a width greater than a portion of the first recess where no micro trench is formed, etching the substrate disposed under the second recess to form a third recess having a profile substantially spherical, and forming a gate pattern over a resultant recess including the first to third recesses.

Abstract: The present invention discloses an improved transistor with a &pgr;-gate structure usable at microwave and millimeter wave and comprises a GaAs wafer, GND formed on the bottom surface of the wafer and grounded to source layers formed on the top surface of the wafer by the process of back-side via-hole. A drain is formed on the top surface of the wafer between the source layers and has an air layer on top. A gate, shaped as a result of using an air bridge technique, contacts the top surface of the wafer between the source layers and the drain so as to support the wafer at laterally opposite ends over the air layer of the drain. The gate having &pgr;-structure improves noise characteristics of the transistor because of low electrical resistance, which is a result of the gate structure straddling above the drain stage.

Abstract: A method of generating a net-list for designing an integrated circuit device is provided, including generating a pin template file by laying out logic elements included in the integrated circuit device, generating a pin file by assigning a serial number to the logic elements and setting power names necessary for operating the logic elements, and generating a power inform template file by grouping an internal circuit of the integrated circuit device by a unit of power, generating a power inform file by combining the pin file with the power inform template file and arranging power information which is separately applied to each logic element, generating a final power inform file by assigning correct power names to power ports, to which power applied thereto is not defined, and completing a final net-list by combining core-related information of the integrated circuit device with the final power inform file.

Abstract: The present invention proposes a improved transistor with &pgr;-gate structure usable at microwave and millimeter wave and a method for producing the same.

Abstract: A passive containment cooling system for a nuclear reactor and a method of cooling a pressurized water reactor thereby has an isolation condensing means for cooling and condensing steam and accumulating and cooling noncondensable gas released from within a containment of a nuclear reactor. A steam-driven air ejector which is driven by steam of high temperature and pressure generated from a steam generator is used to exhaust the noncondensable gas from the isolation condensing means, to flow the noncondensable gas into the containment. A steam generator makeup water storage tank makes up the water inventory of the steam generator and provides security for steam generator water inventory lost by operation of the steam-driven air ejector. This leads to the removal of early decay heat by dumping steam from the steam generator into the tank and injection of makeup water into the steam generator during the early stage of an accident.