Abstract: A display device includes: a pixel circuit layer including a plurality of transistors; first partition wall and a second partition wall on the pixel circuit layer, each of the first and second partition walls having a shape protruding in a thickness direction; a first electrode and a second electrode on the same layer and respectively on the first partition wall and the second partition wall; a light emitting element between the first electrode and the second electrode; and a semiconductor pattern directly on the first electrode.

Abstract: An air-cooled battery cooling system for an air mobility vehicle may ensure the cooling performance for batteries using air flows during the flight of the air mobility vehicle, since the cooling of the batteries is performed using an air flow in the top-bottom direction due to the hovering of the air mobility vehicle and an air flow in the front and rear direction due to the cruising of the air mobility vehicle, the efficient cooling performance for the batteries is ensured in a variety of flight modes. Furthermore, the batteries are securely fixed while being cooled by air flows via the heat transfer pads within the battery packs.

Abstract: In an air mobility vehicle, an engine operates as required to provide mechanical driving force or electric energy. A battery is charged with the electric energy from the engine. Main rotors operate using the electric energy of the battery and electric power generated by the engine to perform takeoff, landing, and cruising. Auxiliary rotors are disposed at or adjacent to the center of gravity of a vehicle body and mechanically connected to the engine via a clutch. The auxiliary rotors perform the takeoff, the landing, or the cruising by receiving the mechanical driving force from the engine when the clutch is in an engaged position. A controller monitors the states of the battery and the main rotors and controls the operations of the engine and the clutch.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: The present invention relates to a method for forming a charge transport layer on a substrate. Specifically, the present invention provides a method for manufacturing a device comprising a charge transport layer, which enables a uniform charge transport layer to be formed by a solution process even on a large area substrate. The method for manufacturing a device comprising a charge transport layer, of the present invention, may comprise: a charge forming step of forming first polarity charges on a transparent conductive substrate; a polymer electrolyte coating forming step of forming, on the transparent conductive substrate on which the first polarity charges are formed, a polymer electrolyte coating layer of second polarity charges which have the opposite polarity to that of the first polarity charges; and a first charge transport layer forming step of coating the polymer electrolyte coating layer with nanoparticles having the first polarity charges so as to form a first charge transport layer.

Abstract: A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: Provided is a method for preparing a perovskite electronic device including steps of: forming an electron transport layer and a second light absorption layer including a perovskite material each independently on a first substrate and a second substrate; forming a first light absorption layer including a perovskite material on the electron transport layer; coating a solvent on the surface of the first light absorption layer and the second light absorption layer; bonding the second light absorption layer on the first light absorption layer; removing the second substrate; forming a hole transport layer on the second light absorption layer; and forming an electrode on the hole transport layer.

Abstract: The present application relates to a method for manufacturing an inverse opal structure membrane filter, the method comprising the steps of: preparing a mixed solution by mixing a nanoparticle dispersion solution and a sacrificial particle dispersion solution; applying the mixed solution onto a substrate to dry it; and heat-treating the mixed solution, wherein the surface of the sacrificial particles is modified by positive charges or negative charges.

Abstract: A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Abstract: A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: The present disclosure provides a method for producing beta-tricalcium phosphate spherical particles containing magnetic ions. The method includes mixing acidic amino acid monomers, metal salt of magnetic ions and metal salt of calcium ions in de-ionized water to form a first solution; dissolve phosphate in de-ionized water to form a second solution; mixing the first and second solutions to form a third solution; and performing hydrothermal synthesis of the third solution.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.