Patents by Inventor HYUN-YOUNG YOO

HYUN-YOUNG YOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11452794
    Abstract: The present invention relates to a wound dressing material comprising a fibrillated acellular dermis matrix and a biodegradable polymer aqueous solution and, more specifically, to: a wound dressing material comprising 5-20 wt % of a fibrillated acellular dermis matrix, 0.5-5 wt % of a biodegradable polymer, and 75-94.5 wt % of water; and a preparation method therefor.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: September 27, 2022
    Assignees: CG BIO CO., LTD., THE ASAN FOUNDATION
    Inventors: Hee Jun Park, Hyun Seung Ryu, Joon Pio Hong, Jun Hyuk Seo, Jong Ha Park, Soon Gee Hong, Hak Su Jang, So Myoung Lee, Bo Young Yoo
  • Patent number: 11430996
    Abstract: A method is disclosed for preparing a metal single-atom catalyst for a fuel cell including the steps of depositing metal single atoms to a nitrogen precursor powder, mixing the metal single atom-deposited nitrogen precursor powder with a carbonaceous support, and carrying out heat treatment. The step of depositing metal single atoms is carried out by sputtering, thermal evaporation, E-beam evaporation or atomic layer deposition. The method uses a relatively lower amount of chemical substances as compared to conventional methods, is eco-friendly, and can produce a single-atom catalyst at low cost. In addition, unlike conventional methods which are limited to certain metallic materials, the present method can be applied regardless of the type of metal.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 30, 2022
    Assignee: Korea Institute of Science and Technology
    Inventors: Sung Jong Yoo, Injoon Jang, Hee-Young Park, So Young Lee, Hyun Seo Park, Jin Young Kim, Jong Hyun Jang, Hyoung-Juhn Kim
  • Publication number: 20220218593
    Abstract: Provided is a composition for skin whitening, including a Syzygium formosum extract as an active ingredient. The Syzygium formosum extract has excellent tyrosinase inhibitory activity, and thus can be usefully used as a cosmetic composition for skin whitening or a composition for preventing or alleviating melanin hyperpigmentation diseases. In addition, the Syzygium formosum extract has excellent antibacterial and antiatopic activities, thereby being useful as an antibacterial and antiatopic composition.
    Type: Application
    Filed: October 10, 2019
    Publication date: July 14, 2022
    Inventors: Chang Kyu LEE, Min Jee YOO, Hyun Ah YU, Jin Ju BAE, Nan Young LEE
  • Patent number: 11374177
    Abstract: Provided are a compound represented by the following Chemical Formulas and an organic light emitting device comprising the same.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: June 28, 2022
    Inventors: Kwang Ju Jung, Sung Soo Kim, Hyun Young Yoo, Jong Jin Ha, Seok Jong Lee, Chun Young Lee
  • Publication number: 20200235309
    Abstract: Provided are a compound represented by the following Chemical Formulas and an organic light emitting device comprising the same.
    Type: Application
    Filed: November 7, 2019
    Publication date: July 23, 2020
    Inventors: Kwang Ju JUNG, Sung Soo KIM, Hyun Young YOO, Jong Jin HA, Seok Jong LEE, Chun Young LEE
  • Publication number: 20190288215
    Abstract: The present invention provides a compound of Chemical Formula 1 and a light emitting device comprising the same.
    Type: Application
    Filed: November 15, 2018
    Publication date: September 19, 2019
    Inventors: Seok-Jong LEE, Jin-Hee KIM, Eun-Chul SHIN, Jae-Kyo PARK, Hyun-Young YOO, Ah Rang LEE
  • Publication number: 20190161485
    Abstract: The present invention provides an organic compound represented by Chemical Formula 1 below: In Chemical Formula 1, R1 to R9 are each, independently, any one selected from the group consisting of hydrogen, a halogen, a nitro group, a substituted or unsubstituted C1-C6 alkyl group, a substituted or unsubstituted C3-C6 cycloalkyl group, a substituted or unsubstituted C6-C40 aryl group, and a substituted or unsubstituted C5-C40 heteroaryl group; L represents a single bond and is any one selected from the group consisting of an alkylene group, a cycloalkylene group, a heterocycloalkylene group, an arylene group, and a heteroarylene group; and Ar1 and Ar2 are each, independently, any one selected from the group consisting of hydrogen, a substituted or unsubstituted C3-C6 cycloalkyl group, a substituted or unsubstituted C3-C6 heterocycloalkyl group, a substituted or unsubstituted C6-C40 aryl group, and a substituted or unsubstituted C2-C40 heteroaryl group.
    Type: Application
    Filed: November 22, 2018
    Publication date: May 30, 2019
    Inventors: Jong Jin HA, Hyun Young YOO, Sung Soo KIM, Seok Jong LEE
  • Patent number: 9852804
    Abstract: A method of operating a nonvolatile memory device that includes a three-dimensional (3D) memory cell array is provided as follows. A first read operation is performed on first memory cells connected to a first word line by using a first read voltage level. A read retry operation is, if the first read operation fails, performed on the first memory cells so that a read retry voltage level is set to a second read voltage level. A read offset table is determined based on a difference between the first read voltage level and the second read voltage level. The read offset table stores a plurality of read voltage offsets. A second read operation is performed on second memory cells connected to a second word line by using a third read voltage level determined using the read offset table.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: December 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Chul Park, Hyun-Young Yoo, Sang-Soo Park
  • Publication number: 20170162270
    Abstract: A method of operating a nonvolatile memory device that includes a three-dimensional (3D) memory cell array is provided as follows. A first read operation is performed on first memory cells connected to a first word line by using a first read voltage level. A read retry operation is, if the first read operation fails, performed on the first memory cells so that a read retry voltage level is set to a second read voltage level. A read offset table is determined based on a difference between the first read voltage level and the second read voltage level. The read offset table stores a plurality of read voltage offsets. A second read operation is performed on second memory cells connected to a second word line by using a third read voltage level determined using the read offset table.
    Type: Application
    Filed: September 30, 2016
    Publication date: June 8, 2017
    Inventors: JONG-CHUL PARK, HYUN-YOUNG YOO, SANG-SOO PARK