Patents by Inventor Hyundai Park
Hyundai Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160111858Abstract: Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.Type: ApplicationFiled: November 2, 2015Publication date: April 21, 2016Inventor: Hyundai Park
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Patent number: 9316792Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.Type: GrantFiled: January 20, 2014Date of Patent: April 19, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Hyundai Park, Taeyong Kim, JiHo Joo, Jaegyu Park, Gyungock Kim
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Publication number: 20160099546Abstract: Described herein are lasers comprising an output port to output an optical signal, a plurality of waveguide segments forming an optical cavity length, and a resonant optical cavity comprising the optical cavity length, a gain medium included in the resonant optical cavity to amplify the optical signal, and a heating element disposed near at least two of the plurality of waveguide segments, the heating element controllable to adjust the phase of the optical signal by heating the waveguide segments. Described herein are optical devices comprising a first plurality of ports to output a plurality of optical signals, a second plurality of ports to receive the plurality of optical signals, and a plurality of coupling waveguides. The plurality of waveguide may comprise a pair of adjacent waveguides separated by a first distance, each of the pair of adjacent waveguides comprising a different width.Type: ApplicationFiled: September 30, 2015Publication date: April 7, 2016Inventors: Erik Johan Norberg, Brian Koch, Gregory Alan Fish, Hyundai Park, Jared Bauters
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Patent number: 9209604Abstract: Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.Type: GrantFiled: March 26, 2012Date of Patent: December 8, 2015Assignee: Intel CorporationInventor: Hyundai Park
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Patent number: 9164238Abstract: Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal.Type: GrantFiled: July 11, 2014Date of Patent: October 20, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Jaegyu Park, Hyundai Park, Jiho Joo, Myung joon Kwack, Gyungock Kim
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Publication number: 20150277054Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.Type: ApplicationFiled: January 20, 2014Publication date: October 1, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Hyundai PARK, Taeyong KIM, JiHo JOO, Jaegyu PARK, Gyungock KIM
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Patent number: 9134478Abstract: Described are embodiments of hybrid optical apparatuses including anti-resonant optical waveguides, and methods for making such apparatuses and systems. In one embodiment, a hybrid optical apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials and a second semiconductor region coupled with the first semiconductor region. The second semiconductor region may include an optical waveguide configured to transmit light inputted by a light input component. The optical waveguide may be defined by a first trench disposed on a first side of the waveguide, and a second trench disposed on a second side of the waveguide opposite the first side. A width of each trench may vary along a length of the apparatus to control optical power density of the light transmitted along the optical waveguide. Other embodiments may be described and/or claimed.Type: GrantFiled: September 16, 2013Date of Patent: September 15, 2015Assignee: Intel CorporationInventors: Hyundai Park, Richard Jones
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Patent number: 9118160Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.Type: GrantFiled: March 3, 2014Date of Patent: August 25, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Hyundai Park, Gyungock Kim
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Patent number: 9020002Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.Type: GrantFiled: September 13, 2013Date of Patent: April 28, 2015Assignee: The Regents of the University of CaliforniaInventors: Matthew N. Sysak, John E. Bowers, Alexander W. Fang, Hyundai Park
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Publication number: 20150078703Abstract: Described are embodiments of hybrid optical apparatuses including anti-resonant optical waveguides, and methods for making such apparatuses and systems. In one embodiment, a hybrid optical apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials and a second semiconductor region coupled with the first semiconductor region. The second semiconductor region may include an optical waveguide configured to transmit light inputted by a light input component. The optical waveguide may be defined by a first trench disposed on a first side of the waveguide, and a second trench disposed on a second side of the waveguide opposite the first side. A width of each trench may vary along a length of the apparatus to control optical power density of the light transmitted along the optical waveguide. Other embodiments may be described and/or claimed.Type: ApplicationFiled: September 16, 2013Publication date: March 19, 2015Inventors: Hyundai Park, Richard Jones
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Publication number: 20150078708Abstract: Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal.Type: ApplicationFiled: July 11, 2014Publication date: March 19, 2015Inventors: Jaegyu PARK, Hyundai PARK, Jiho JOO, Myung joon KWACK, Gyungock KIM
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Publication number: 20150030282Abstract: Provided is an optical device including a first optical waveguide on one side of a substrate; a laser separated from the first optical waveguide and disposed on the other side of the substrate; and a first coupled waveguide between the laser and the first optical waveguide. The laser may be monolithically integrated on the substrate.Type: ApplicationFiled: January 16, 2014Publication date: January 29, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Hyundai PARK, Jaegyu PARK, JiHo JOO, Gyungock KIM
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Publication number: 20140346532Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: ApplicationFiled: October 24, 2013Publication date: November 27, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, Myung Joon KWACK
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Publication number: 20140348194Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.Type: ApplicationFiled: March 3, 2014Publication date: November 27, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Hyundai PARK, Gyungock KIM
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Patent number: 8767792Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.Type: GrantFiled: March 15, 2013Date of Patent: July 1, 2014Assignee: Intel CorporationInventors: John E. Bowers, Oded Cohen, Alexander W. Fang, Richard Jones, Mario J. Paniccia, Hyundai Park
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Publication number: 20140010253Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.Type: ApplicationFiled: September 13, 2013Publication date: January 9, 2014Applicant: The Regents of the University of CaliforniaInventors: Matthew N. Sysak, John E. Bowers, Alexander W. Fang, Hyundai Park
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Patent number: 8620164Abstract: Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.Type: GrantFiled: January 20, 2011Date of Patent: December 31, 2013Assignee: Intel CorporationInventors: John Heck, Hanan Bar, Richard Jones, Hyundai Park
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Publication number: 20130322890Abstract: Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.Type: ApplicationFiled: March 26, 2012Publication date: December 5, 2013Inventor: Hyundai Park
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Patent number: 8559478Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.Type: GrantFiled: January 16, 2009Date of Patent: October 15, 2013Assignee: The Regents of the University of CaliforniaInventors: Matthew N. Sysak, John E. Bowers, Alexander W. Fang, Hyundai Park
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Publication number: 20130195137Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.Type: ApplicationFiled: March 15, 2013Publication date: August 1, 2013Inventors: John E. Bowers, Oded Cohen, Alexander W. Fang, Richard Jones, Mario J. Paniccia, Hyundai Park