Abstract: A semiconductor memory device includes a memory array including a plurality of memory cells, and a peripheral circuit configured to perform an erase operation by supplying a first erase voltage to selected memory cells and perform an erase verify operation by supplying an erase verify voltage to the selected memory cells, wherein the peripheral circuit is configured to increase the first erase voltage to a first level at a first rising rate for a first rising period and increase the first erase voltage to a first target level at a second rising rate lower than the first rising rate for a second rising period.

Abstract: A system for producing carbon nanotubes includes a reaction chamber in which a process is performed for producing a carbon nanotube on a synthetic substrate; a station part disposed at one side of the reaction chamber and provided with a first transporter for loading/unloading the synthetic substrate to/from the reaction chamber; a first transporter installed inside the station part for loading/unloading synthetic substrates to/from the reaction chamber; a substrate accommodating part in which a substrate to be loaded to the reaction chamber is accommodated or a synthetic substrate unloaded from the reaction chamber waits; a retrieve part for drawing out a synthetic substrate from the substrate accommodating part to retrieve a carbon nanotube produced on the synthetic substrate; a catalyst coating unit configured for coating a synthetic substrate with a catalyst before the synthetic substrate is accommodated in the substrate accommodating part of the station part; and a second transporter for transporting a s

Abstract: A re-circulating time-to-digital converter (TDC) can include a triggered reference ring oscillator (TRRO) and a delay module. The triggered reference ring oscillator can, when triggered by a reference signal edge, generate a periodic ring oscillator signal with a ring oscillator period that is a selected ratio of a voltage-controlled oscillator (VCO) period. The delay module can store, in a plurality of latches, samples of a VCO signal docked by the periodic ring oscillator signal. Each latch can generate an output of the sample, and each latch output can represent a time difference polarity between VCO signal and TRRO signal. In another example, the re-circulating TDC can include the triggered reference ring oscillator, a digital frequency lock module, and a TDC post-process module. The digital frequency lock module can generate a ring oscillator control signal, which sets the ring oscillator period for the triggered reference ring oscillator.

Abstract: A semiconductor memory device and a method of operating the same include a circuit group configured to apply a program maintaining voltage between the program prohibition voltage and the program permission voltage to bit lines connected to programmed memory cells to prevent a decrease in threshold voltage.

Abstract: The present invention relates to a shoulder-mounted multifunctional hanging device having a structure for fitting onto the body of a user. The shoulder-mounted multifunctional hanging device having a body-fitting structure comprises: a first support unit having a connection portion extending in the lateral direction, and a concave portion contacting the acromion; a second support unit extending from the first support unit and mounted on supraspinatus; and a recess unit that is recessed up to the area in which the first support unit and the second unit are connected. The shoulder-mounted multifunctional hanging device of the present invention is shaped to fit to the structure of the shoulder of a user, and the user may thus be administered an infusion solution in a more comfortable manner without inconvenience to the shoulder.

Abstract: Disclosed is an apparatus for producing low oxygen-content molybdenum powders by reducing MoO3. The apparatus includes a body, a cover to close an upper end of the body, a joint to couple the body with the cover, a bracket located in the body, and a micro-sieve located on an upper portion of the bracket. Metal Mo powders having the oxygen content of 3,000 ppm are obtained by using the apparatus for producing low oxygen-content molybdenum powders by reducing MoO3.

Abstract: Disclosed is a method of producing low oxygen-content molybdenum powders by reducing molybdenum trioxide, which includes charging a first reducing agent and the molybdenum trioxide, which are in the direct contact with each other on a micro-sieve on an upper portion of a bracket in a body, charging a second reducing agent in the bracket under the micro-sieve, coupling the body with a cover to close the body, and performing a reduction reaction by raising an internal temperature of the body by performing the first reduction reaction due to direct contact between the first reducing agent and the molybdenum trioxide, and performing the second reduction reaction due to evaporation of the second reducing agent. The first and second reduction reactions are performed at a temperature in a range of 550° C. to 650° C., and a temperature in a range of 1000° C. to 1200° C., respectively.

Abstract: Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer includes Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu2Se nanoparticles and (In,Ga)2Se3 nanoparticles on the rear electrode, and heating the treated electrode with the ink. Since Cu(In,Ga)Se2 (CIGS) thin film is formed using the ink containing nanoparticles, a simple process is used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc., can be easily regulated.

Abstract: Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The non-volatile semiconductor memory device includes at least one bit line; and a cell string configured to be coupled with the bit line respectively, and include normal memory cells and dummy memory cells that are alternately coupled with each other, where normal data are programmed and read to and from the normal memory cells, and dummy memory cells are programmed with dummy data.

Abstract: An inverter-driven resistor-ladder digital-to-analog (DAC) converter includes a resistor-ladder network that comprises a resistor for each bit signal of a multi-bit input signal. Each resistor of the resistor-ladder network comprises an input end and an output end. The input end of each resistor is coupled to a corresponding bit signal of the multi-bit input signal, and the output end of each resistor is coupled to an output node of the resistor-ladder network. An output voltage is generated at the output node that is based on the multi-bit input signal. In one exemplary embodiment, the multi-bit input signal is a sigma-delta (??) modulated multi-bit input signal. In another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are related by a binary weighting. In still another exemplary embodiment, resistance values of the resistors of the resistor-ladder network are substantially equal.

Abstract: A semiconductor memory device includes a memory string coupled to a bit line, a page buffer configured to sense a sensing current of the bit line in an erase verification operation or a program verification operation, and a sensing control circuit configured to differently set a level of the sensing current in the erase verification operation and the program verification operation in order to sense the threshold voltage level of a selected memory cell of the memory string.

Abstract: A semiconductor memory device and a method of operating the same include a circuit group configured to apply a program maintaining voltage between the program prohibition voltage and the program permission voltage to bit lines connected to programmed memory cells to prevent a decrease in threshold voltage.

Abstract: Disclosed is a rubber composition obtained by chemically blending rubber with a filler, particularly in which Latex rubber is directly blended with a starch solution obtained by gelatinizing starch in water. Herein, as a coupling agent between Latex rubber and starch, resorcinol-formaldehyde is used. By this, a vulcanized rubber compound is prepared. When resorcinol-formaldehyde is used as a coupling agent during the blending of the Latex rubber with the gelatinized starch solution, it is possible to solve the problem of tensile strength lowering caused by low affinity with rubber. Furthermore, it is possible to inhibit starch loss caused by high water-solubility, during the blending of starch in a liquid state. Also, the physical property of the vulcanized rubber compound can be varied according to the amount of the added coupling agent.

Abstract: Disclosed is a method and apparatus to extend TDC resolution to better than 1 ps without incurring a matching and power penalty. Higher resolution can be achieved by segmenting the resolution between a mismatch free re-circulating time-to-digital converter (RTDC) and a stochastic time-to-digital converter (STDC). The disclosed RTDC replicates the same delay element to eliminate mismatch with the required dynamic range (200 ps for a 5 GHz example) and moderate resolution (3-5 ps typical corresponding to 6-7 bits for the 5 GHz case). While the STDC can achieve a resolution of 50 fs but with a range of only 3-5 ps which also corresponds to approximately 6-7 additional bits by exploiting process variations and mismatch to achieve a very fine resolution with limited dynamic range.

Abstract: The inventive concept provides methods for inhibiting the formation of one or more oxides on metal bumps during the formation of solder joint structures and solder joint structures including one or more preservative films. In some embodiments, the solder joint structure includes a metal bump having a preservative film disposed on the surface thereof.

Abstract: A backlight unit includes a plurality of light emitting diodes as a light source; a board having a rectangular shape and including a plurality of metal lines each extending along a first direction, wherein the plurality of light emitting diodes are arranged on the board and respectively connected to the plurality of metal lines; a pad portion attached on a side, which is parallel to the first direction, of the board and including first to Nth pads respectively connected to the plurality of metal lines, wherein N is a positive integer; a driving circuit connected to the first to Nth pads and providing a driving signal into the plurality of light emitting diodes; and an optical member at a side of the light emitting diodes and for improving a light property.

Abstract: The present invention relates to bacteria which specifically target infracted tissue and use thereof. The present invention provides a selective infracted tissue-targeting bacterium for the first time, and can be used in selectively delivering drugs to the infracted tissue or in selectively imaging the infracted tissue. The infracted tissue-targeting bacterium of the present invention can finish treatments by using antibiotics, and therefore, have remarkable advantages as compared to gene therapy using recombinant viruses. The infracted tissue-targeting bacterium of the present invention have a significantly high affinity and specificity to infracted myocardium or infracted brain, thereby significantly reducing undesired transfections in the organs or tissues other than the heart. The gene expression by the infracted tissue-targeting bacterium of the present invention in infracted myocardium or infracted brain is remotely controllable.

Abstract: A semiconductor memory device includes a plurality of memory blocks configured to include memory cells, a voltage supply circuit configured to supply an erase voltage for an erase operation of a memory block selected from the memory blocks and supply an erase verify voltage and an erase pass voltage for an erase verify operation of the memory block selected from the memory blocks, and a control logic configured to group word lines per specific word lines, when the erase verify operation for the selected memory block is performed, and control the voltage supply circuit so that one or more of the erase verify voltage and the erase pass voltage rise whenever the erase verify operation is performed.

Abstract: Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer includes Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu2Se nanoparticles and (In,Ga)2Se3 nanoparticles on the rear electrode, and heating the treated electrode with the ink. Since Cu(In,Ga)Se2 (CIGS) thin film is formed using the ink containing nanoparticles, a simple process is used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc., can be easily regulated.

Abstract: Provided is a tabletop interface system. A tabletop input device diffuses an infrared light emitted based on at least one touch input from a user. A tabletop output device allows the diffused infrared light to pass therethrough to display content information corresponding to at least one touch point. The tabletop recognition device recognizes the at least one touch point by generating a touch image data based on the infrared light passing through the tabletop output device and generates touch point information by using the touch image data. The content server transmits the content information, which corresponds to the touch point information received from the tabletop recognition device, to at least one content client application.