Patents by Inventor Hyung Soo Ahn

Hyung Soo Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10554861
    Abstract: Provided is a color compensation method in an image forming apparatus. The color compensation method may include imaging a first color chart by a first image forming apparatus, scanning the imaged first color chart, comparing information regarding the scanned first color chart and information regarding a reference color chart to determine an international color consortium (ICC) profile of the first image forming apparatus, and performing color compensation on the first image forming apparatus based on the determined ICC profile.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: February 4, 2020
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Joo-young Jung, Hyung-jong Kang, Kyeong-man Kim, Jeong-hun Kim, Nam-ju Shin, Ho-jin Ahn, Hyun-soo Oh, Woo-jun Chung, Jung-mo Hong, In-ho Park
  • Publication number: 20190275755
    Abstract: Methods and apparatus for automating the fiber laying process during the repair of composite structures made of fiber-reinforced plastic material based on the three-dimensional printing technique. Continuous fiber rovings (e.g., carbon fibers) impregnated with liquid epoxy can be directly printed onto the damaged surface of the composite structure (e.g., an aircraft component made of carbon fiber-reinforced plastic) without human manipulation in an autonomous manner.
    Type: Application
    Filed: March 8, 2018
    Publication date: September 12, 2019
    Applicants: The Boeing Company, Seoul National University R&DB Foundation
    Inventors: Jeong-Beom Ihn, Sung-Hoon Ahn, Gil-Yong Lee, Hyung-Soo Kim, Min-Soo Kim, Ho-Jin Kim, Soo-Hong Min
  • Patent number: 10211382
    Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: February 19, 2019
    Assignee: PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Hyung Soo Ahn, Sam Nyung Yi, Min Yang, Kee Sam Shin, Young Moon Yu
  • Patent number: 9831405
    Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: November 28, 2017
    Assignee: PUKYONG NATIONAL UNIVERSITY INDUSTRY—UNIVERSITY COOPERATION FOUNDATION
    Inventors: Hyung Soo Ahn, Sam Nyung Yi, Min Yang, Kee Sam Shin, Young Moon Yu
  • Publication number: 20170317254
    Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 2, 2017
    Inventors: Hyung Soo Ahn, Sam Nyung Yi, Min Yang, Kee Sam Shin, Young Moon Yu
  • Patent number: 9595638
    Abstract: The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: March 14, 2017
    Assignee: PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
    Inventors: Hyung Soo Ahn, Min Yang, Kee Sam Shin, Sam Nyung Yi, Hyo Jong Lee, Moon Yeoung Yu
  • Publication number: 20160284956
    Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.
    Type: Application
    Filed: March 23, 2015
    Publication date: September 29, 2016
    Inventors: Hyung Soo Ahn, Sam Nyung Yi, Min Yang, Kee Sam Shin, Young Moon Yu
  • Publication number: 20140306248
    Abstract: The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 16, 2014
    Inventors: Hyung Soo Ahn, Min Yang, Kee Sam Shin, Sam Nyung Yi, Hyo Jong Lee, Moon Yeoung Yu
  • Patent number: 8716042
    Abstract: A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: May 6, 2014
    Assignee: CSsolution Co., Ltd.
    Inventors: Hyung-Soo Ahn, Min Yang, Hongju Ha
  • Publication number: 20130020594
    Abstract: A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.
    Type: Application
    Filed: March 31, 2011
    Publication date: January 24, 2013
    Applicant: CSSOLUTION CO., LTD.
    Inventors: Hyung-Soo Ahn, Min Yang, Hongju Ha
  • Publication number: 20110189457
    Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
    Type: Application
    Filed: April 14, 2011
    Publication date: August 4, 2011
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jaeun YOO, Hyung Soo AHN, Min YANG, Masayoshi KOIKE
  • Patent number: 7943492
    Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
    Type: Grant
    Filed: April 24, 2007
    Date of Patent: May 17, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Jaeun Yoo, Hyung Soo Ahn, Min Yang, Masayoshi Koike
  • Publication number: 20070254445
    Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
    Type: Application
    Filed: April 24, 2007
    Publication date: November 1, 2007
    Inventors: Jaeun Yoo, Hyung Soo Ahn, Min Yang, Masayoshi Koike