Abstract: An image sensor includes a substrate including a first region and a second region disposed in a periphery of the first region. The first region includes a plurality of unit pixels and a color filter structure, and the second region includes a dummy structure including a second color filter and a plurality of dummy lenses on the second color filter. The color filter structure includes a first extension portion extending in a first direction and a second extension portion extending in a second direction, and the dummy structure includes a third extension portion extending in the first direction and a fourth extension portion extending in the second direction. A first micro-lens, a second micro-lens, and a third micro-lens are in a first corner portion, and a first dummy lens, a second dummy lens, and a third dummy lens are in the second corner portion.

Abstract: An electronic parking brake apparatus is disclosed. An embodiment of the present disclosure provides an electronic parking brake apparatus including a drum; a backing plate located on a side inside the drum; a cylinder attached to a surface of the backing plate; a motor configured to expand or contract the cylinder; a pair of shoes coupled to one side and an other side of the cylinder, respectively, with a lining attached to an outer circumferential surface thereof; a spring located between the pair of shoes and coupled to the pair of shoes; and a control unit configured to control a contraction operation of the cylinder during parking release operation, wherein the control unit determines an end time of the contraction operation.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.