Abstract: Provided is a dye-sensitized upconversion nanophosphor including a core, a first shell surrounding at least part of the core, and an organic dye bonded to a surface of the nanophosphor which has an absorption band ranging from 650 nm to 850 nm and which is excited in a near-infrared region to emit visible light. The dye-sensitized upconversion nanophosphor may be included in a display apparatus, a fluorescent contrast agent, or an anti-counterfeiting code. The organic dye may be an IR-808 dye.

Abstract: Provided is a dye-sensitized upconversion nanophosphor including a core, a first shell surrounding at least part of the core, and an organic dye bonded to a surface of the nanophosphor to have an absorption band ranging from 650 nm to 850 nm and be excited in a near-infrared region to emit visible light.

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.