Patents by Inventor Hyungsuk Yoon

Hyungsuk Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8673779
    Abstract: A method of filling of vias and trenches in a dual damascene structure with a filling comprising copper or copper alloy is provided. An electroless deposition filling of the vias with a via filling comprising copper or copper alloy is provided. A trench barrier layer is formed over the via filling with a trench barrier layer comprising Mn or Al. The trench barrier layer is annealed at a temperature that causes a component of the trench barrier layer to pass into the via filling. The trenches are filled with a trench filling comprising copper or copper alloy.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: March 18, 2014
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk A. Yoon, William T. Lee
  • Publication number: 20070072432
    Abstract: An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
    Type: Application
    Filed: September 27, 2005
    Publication date: March 29, 2007
    Inventors: Hyungsuk Yoon, William Thie, Yezdi Dordi
  • Publication number: 20070068899
    Abstract: An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the edge polymer.
    Type: Application
    Filed: September 26, 2005
    Publication date: March 29, 2007
    Inventor: Hyungsuk Yoon
  • Publication number: 20070072433
    Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
    Type: Application
    Filed: September 27, 2005
    Publication date: March 29, 2007
    Inventors: Hyungsuk Yoon, John Boyd, Andras Kuthi
  • Publication number: 20070068623
    Abstract: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
    Type: Application
    Filed: September 27, 2005
    Publication date: March 29, 2007
    Inventors: Yunsang Kim, Andrew Bailey, Hyungsuk Yoon
  • Publication number: 20060128152
    Abstract: A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
    Type: Application
    Filed: March 9, 2005
    Publication date: June 15, 2006
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Yunsang Kim, Andrew Bailey, Hyungsuk Yoon, Arthur Howald
  • Publication number: 20060040052
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Application
    Filed: April 18, 2003
    Publication date: February 23, 2006
    Inventors: Hongbin Fang, Hyungsuk Yoon, Ken Lai, Chi Young, Chao-Ming Huang, Ming Xi, Michael Yang, Hua Chung
  • Publication number: 20050008779
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Application
    Filed: August 6, 2004
    Publication date: January 13, 2005
    Inventors: Michael Yang, Hyungsuk Yoon, Hui Zhang, Hongbin Fang, Ming Xi
  • Patent number: 6827978
    Abstract: A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: December 7, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Hyungsuk A. Yoon, Hongbin Fang, Michael X. Yang
  • Publication number: 20040065255
    Abstract: Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber; at least one load lock chamber connected to the processing chamber; a plurality of gas injectors connected to the processing chamber. The gas injectors are configured to deliver gas streams into the processing chamber. The system further includes at least one shuttle movable between the at least one load lock chamber and the processing chamber.
    Type: Application
    Filed: January 31, 2003
    Publication date: April 8, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Michael X. Yang, Joseph Yudovsky, Hyungsuk Yoon, Xiaoxiong Yuan
  • Publication number: 20030157760
    Abstract: A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.
    Type: Application
    Filed: February 20, 2002
    Publication date: August 21, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Ming Xi, Soonil Hong, Hyungsuk A. Yoon, Michael X. Yang, Hui Zhang
  • Publication number: 20030153181
    Abstract: A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
    Type: Application
    Filed: February 11, 2002
    Publication date: August 14, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Hyungsuk A. Yoon, Hongbin Fang, Michael X. Yang
  • Publication number: 20030123216
    Abstract: A method and apparatus of depositing a tungsten film by cyclical deposition in the formation of tungsten silicide for use in capacitor structures is provided. One embodiment of forming an electrode for a capacitor structure comprises depositing a polysilicon layer over a structure and depositing a tungsten layer over the polysilicon layer by cyclical deposition. The tungsten layer is annealed to form a tungsten silicide layer from the polysilicon layer and the tungsten layer. The tungsten silicide layer acts as one electrode in the capacitor structure. In one aspect, the tungsten silicide layer may be used to form three-dimensional capacitor structures, such as trench capacitors, crown capacitors, and other types of capacitors. In another aspect, the tungsten silicide layer may be used to form capacitor structures which comprise a hemi-spherical silicon grain layer or a rough polysilicon layer.
    Type: Application
    Filed: December 27, 2001
    Publication date: July 3, 2003
    Inventors: Hyungsuk A. Yoon, Hui Zhang, Michael X. Yang, Ken Kaung Lai, Robert L. Jackson, Alfred W. Mak, Ming Xi