Abstract: A terminal according to one embodiment of the present disclosure can receive a physical downlink control channel (PDCCH) on the basis of the detection of a paging early indication (PEI) and can receive a physical downlink shared channel (PDSCH) on the basis of the PDCCH, a slot in which the PDSCH is to be received can be determined on the basis of one from among a plurality of time domain resource allocation (TDRA) tables set in the terminal, and the value “N” of a TDRA field included in DCI, and the plurality of TDRA tables can include a first TDRA table including at least one entry for same-slot scheduling of the PDCCH and the PDSCH, and a second TDRA table including only entries for cross-slot scheduling of the PDCCH and the PDSCH.

Abstract: One disclosure of this specification provides a method for receiving a synchronization signal block (SSB) by a user equipment (UE). The method may include: determining frequency locations of multiple SSBs; and receiving at least one SSB among the multiple SSBs. The multiple SSBs may be configured to be arranged spaced apart from each other by a predetermined offset. The at least one SSB may be located at an interval of 1.2 MHz on a frequency axis.

Abstract: The present disclosure relates to a wireless communication system, and specifically provides a method and a device therefor, the method comprising: receiving first configuration information for transmitting a sounding reference signal (SRS); performing a channel access procedure (CAP) on the basis of the first configuration information; acquiring a time period for the SRS transmission from an Nth symbol on the basis of a successful CAP in the Nth symbol; performing the SRS transmission within the time period; transmitting, within the time period, second configuration information for triggering positioning reference signal (PRS) transmission in at least one base station included in a cell group; and receiving a PRS from the at least one base station within the time period.

Abstract: The present disclosure relates to: a method comprising: a step for receiving a synchronization signal/public broadcast channel (SS/PBCH) block within a plurality of SS/PBCH block candidates located on an unlicensed band; and a step for obtaining time synchronization on the basis of the SS/PBCH block, wherein on the basis of subcarrier spacing (SCS) of the SS/PBCH block being set to 240 kHz, the plurality of SS/PBCH block candidates are located in both a first half section and a second half section of a time window set for transmission of the SS/PBCH block; and a device therefor.

Abstract: The present invention provides a method for transmitting and receiving a downlink signal between a terminal and a base station in a wireless communication system supporting an unlicensed band, and a device supporting the method. As a specific example, the present invention includes a method for: transmitting and receiving a physical downlink control channel (PDCCH) signal in an unlicensed band so that a base station and a terminal transmit and receive system information associated with a particular synchronization signal/physical broadcast channel (SS/PBCH) block; and, based on the PDCCH signal, transmitting and receiving a PDSCH signal including the system information.

Abstract: A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Abstract: A vibration suppression system includes a ground manipulator, a flexible bar structure connected to an end of the ground manipulator, and at least one vibration suppression device configured to be distributedly arranged to be attached/detached to/from the flexible bar structure and configured to be controlled to reduce vibration and deflection occurring in the flexible bar structure by dispersing a load applied to the flexible bar structure due to movement or disturbance of the ground manipulator.

Abstract: A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a first pinning region 106 having a first fixed magnetization direction; a second pinning region 108 having a second fixed magnetization direction which is in a different direction to the first fixed magnetization direction; a magnetic layer 102 having a switchable magnetization direction; and a spin source layer 104 configured to generate a spin current for propagating a domain wall between the first and second pinning regions 106, 108 to switch the switchable magnetization direction of the magnetic layer 102 between the first and second fixed magnetization directions.

Abstract: In example embodiments, an RF-to-DC converter includes one or more unit cells that integrate a spintronic element (e.g., a magnetic tunnel junction (MTJ)) into a conductor ring RF energy absorber (e.g., a split-ring resonator (SRR)). A RF-to-DC converter that includes one or more MTJ-integrated SRR unit cells may provide compactness, as each unit cell includes its own independent SRR and integrated MTJ; scalability, as multiple unit cells may be connected into an array to increase DC power output; and energy harvesting efficiency, as a MTJ may be much more sensitive than a Schottky diode and the SRR of each unit cell may directly feed energy to a MTJ without impedance matching circuits.

Abstract: A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a first pinning region 106 having a first fixed magnetization direction; a second pinning region 108 having a second fixed magnetization direction which is in a different direction to the first fixed magnetization direction; a magnetic layer 102 having a switchable magnetization direction; and a spin source layer 104 configured to generate a spin current for propagating a domain wall between the first and second pinning regions 106, 108 to switch the switchable magnetization direction of the magnetic layer 102 between the first and second fixed magnetization directions.

Abstract: In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi2Se3, BixSe1-x, Bi1-xSbx, etc.) or a TI/non-magnetic metal (e.g., Bi2Se3/Ag, BixSe1-x/Ag, Bi1-xSbx/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

Abstract: Described is a spin torque device, and a spintronics device Incorporating the spin torque device. The spin torque device comprises a magnetic layer having a switchable magnetisation direction along a first axis, and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis. Electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the magnetic layer to produce spin torque to switch the magnetisation direction.

Abstract: A vibration suppression system includes a ground manipulator, a flexible bar structure connected to an end of the ground manipulator, and at least one vibration suppression device configured to be distributedly arranged to be attached/detached to/from the flexible bar structure and configured to be controlled to reduce vibration and deflection occurring in the flexible bar structure by dispersing a load applied to the flexible bar structure due to movement or disturbance of the ground manipulator.

Abstract: In example embodiments, a SOT magnetic memory and operation method are provided that utilize SOT driven domain wall motion to achieve subsequent switching without the need for an external assist magnetic field. The magnetic memory includes a magnetic tunnel junction having a reference layer, a tunnel barrier layer and a free layer, where the tunnel barrier layer is positioned between the reference layer and free layer. A spin-orbit torque layer is disposed adjacent to the free layer. A pair of pinning site are positioned at a longitudinal end of the free layer and each has an opposite magnetization direction from the other. The SOT layer is configured to exert SOT and switch a magnetization direction of the free layer via domain wall motion in a direction of current flow when an electric current is passed through a length of the SOT layer.

Abstract: In various embodiments, techniques are provided for unipolar SOT switching of a magnetic memory, using current pulses with differing pulse durations or current densities. For example, to switch a MTJ to a high resistance state, in-plane current pulses having a first pulse duration may be applied. To switch the MTJ to a low resistance state, in-plane current pulses having a second pulse duration may be applied. The pulse's polarity and current density may be fixed, and the polarity and magnitude of an in-plane assist field may be fixed. Alternatively, to switch a MTJ to a high resistance state in-plane current pulses having a first current density may be applied. To switch the MTJ to a low resistance state in-plane current pulses having a second current density may be applied. The pulse's polarity and duration may be fixed, and the polarity and magnitude of an in-plane assist field may be fixed.

Abstract: A THz data acquisition and analysis system, use of the THz data analysis system, and a THz data acquisition and analysis method. THz data acquisition and analysis method comprises performing a THz spectroscopy measurement on a sample; acquiring sample data based on the THz spectroscopy measurement; and performing a comparison between the sample data and reference data for identifying the sample.

Abstract: A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.

Abstract: In example embodiments, an RF-to-DC converter includes one or more unit cells that integrate a spintronic element (e.g., a magnetic tunnel junction (MTJ)) into a conductor ring RF energy absorber (e.g., a split-ring resonator (SRR)). A RF-to-DC converter that includes one or more MTJ-integrated SRR unit cells may provide compactness, as each unit cell includes its own independent SRR and integrated MTJ; scalability, as multiple unit cells may be connected into an array to increase DC power output; and energy harvesting efficiency, as a MTJ may be much more sensitive than a Schottky diode and the SRR of each unit cell may directly feed energy to a MTJ without impedance matching circuits.

Abstract: In one embodiment, a spin torque device uses a thick (e.g., >1 nm, and preferably >=2-6 nm) ferrimagnet (FIM) layer, instead of a thin (e.g., <1-2 nm) FM layer in the device's stack. The FIM layer may be composed of a cobalt-gadolinium (Co—Gd) alloy, cobalt-terbium (Co—Tb) multilayers, or other materials that provide anti-ferromagnetic coupling between two sub-lattices. Negative exchange interaction between the two sub-lattices of the FIM may allow for low current switching. High thermal stability and external magnetic field resistance may also be achieved.

Abstract: In various embodiments, techniques are provided for unipolar SOT switching of a magnetic memory, using current pulses with differing pulse durations or current densities. For example, to switch a MTJ to a high resistance state, in-plane current pulses having a first pulse duration may be applied. To switch the MTJ to a low resistance state, in-plane current pulses having a second pulse duration may be applied. The pulse's polarity and current density may be fixed, and the polarity and magnitude of an in-plane assist field may be fixed. Alternatively, to switch a MTJ to a high resistance state in-plane current pulses having a first current density may be applied. To switch the MTJ to a low resistance state in-plane current pulses having a second current density may be applied. The pulse's polarity and duration may be fixed, and the polarity and magnitude of an in-plane assist field may be fixed.