Patents by Inventor I-Cheng Hu

I-Cheng Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150236158
    Abstract: A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 20, 2015
    Applicant: United Microelectronics Corp.
    Inventors: Ming-Hua Chang, Tien-Wei Yu, I-Cheng Hu, Chieh-Lung Wu, Yu-Shu Lin, Chun-Jen Chen, Tsung-Mu Yang, Tien-Chen Chan, Chin-Cheng Chien