Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.

Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 ?m inclusive.

Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 ?m inclusive.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier; arranging an ink on an upper side of the carrier; arranging an adhesive on the ink; and arranging the optoelectronic semiconductor chip on the adhesive. An optoelectronic component includes a carrier, an ink arranged on an upper side of the carrier, an adhesive arranged on the ink, and an optoelectronic semiconductor chip arranged on the adhesive.

Abstract: A light emitting unit includes a light emitting semiconductor chip and a wavelength converter for the light of the semiconductor chip. The wavelength converter has a substrate with a first surface. The first surface includes a rough surface with recesses. The wavelength converter has a conversion layer that is arranged on the first surface of the substrate. The conversion layer has luminescent materials. A connecting layer is arranged between the wavelength converter and a light emitting surface of the light emitting semiconductor chip.

Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.