Abstract: A positive tone photoresist etching development agent for a photoresist film containing acid liable groups includes 0.5 to 2% by weight of tetramethylammonium hydroxide (TMAH), 1 to 20% by weight of an additive having at least two polar functional groups and at least one solvent. The additive has a molecular weight higher than 40, the solvent is water or alcohol, and the agent treated photoresist film retains at least 20% of acid liable groups.

Abstract: A surface-modified structure and a method of modifying a surface are provided. The surface-modified structure includes a surface having a carboxylate group, a modifier represented by NH2-SO2- and an R group. A hydrogen bond is formed between the carboxylate group of the surface and the modifier. The R group is covalently bonded to the modifier.

Abstract: The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II): An apparatus and a method by using the wafer treatment solution are also provided herein.

Abstract: A positive tone photoresist etching development agent for a photoresist film containing acid liable groups includes 0.5 to 2% by weight of tetramethylammonium hydroxide (TMAH), 1 to 20% by weight of an additive having at least two polar functional groups and at least one solvent. The additive has a molecular weight higher than 40, the solvent is water or alcohol, and the agent treated photoresist film retains at least 20% of acid liable groups.

Abstract: The present disclosure provides a solvent for reducing resist consumption, which includes a first solvent selected from the group consisting of alkylene glycol alkyl ether acetate, alkylene glycol alkyl ether and a combination thereof, and a second solvent having a hydrogen bonding Hansen parameter lower than 5.34 and an evaporation rate (n-BuAc=1) lower than 0.6. A volume ratio of the first solvent to the second solvent is in a range of 0/100 to 90/10. A resist dispense volume for a 300 mm wafer is less than 0.6 cc, or a resist dispense volume for a 450 mm wafer is less than 1.1 cc.

Abstract: The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II): An apparatus and a method by using the wafer treatment solution are also provided herein.