Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

Abstract: A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.

Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.

Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.

Abstract: UV detectors comprising undoped Zn1-xMgxS as the UV responsive active material. Where x exceeds 0.3 the thickness of the active material must be below a critical value, for example if 0.30<x<1.00, and the active material is formed as a layer of a thickness t wherein 5000 Å≧t≧100 Å. A particularly preferred combination of x and thickness is x=0.57 and t≦1400 Å because at around these values the UV response of the active material is similar to the UV response of human skin.

Abstract: The present invention relates to UV detectors comprising undoped Zn1-xMgxS as the UV responsive active material. Where x exceeds 0.3 the thickness of the active material must be below a critical value, for example if 0.30<x<1.00, and the active material is formed as a layer of a thickness t wherein 5000 Å≧t≧100 Å. A particularly preferred combination of x and thickness is x=0.57 and t≦1400 Å because at around these values the UV response of the active material is similar to the UV response of human skin.

Abstract: Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel structure is provided to give high quantum efficiency. The invention also discloses UV detectors with an active layer of pure ZnS and with an active layer of ZnSSe.