Patents by Inventor Ian A. Young
Ian A. Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450675Abstract: Described herein are one access transistor and one ferroelectric capacitor (1T-1FE-CAP) memory cells in diagonal arrangements, as well as corresponding methods and devices. When access transistors of memory cells are implemented as FinFETs, then, in a first diagonal arrangement, memory cells are arranged so that the BLs for the cells are diagonal with respect to the fins of the access transistors of the cells, while the WLs for the cells are perpendicular to the fins. In a second diagonal arrangement, memory cells are arranged so that the fins of the access transistors of the cells are diagonal with respect to the WLs for the cells, while the BLs for the cells are perpendicular to the WLs. Such diagonal arrangements may advantageously allow achieving high layout densities of 1T-1FE-CAP memory cells and may benefit from the re-use of front-end transistor process technology with relatively minor adaptations.Type: GrantFiled: September 14, 2018Date of Patent: September 20, 2022Assignee: Intel CorporationInventors: Daniel H. Morris, Uygar E. Avci, Ian A. Young
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Patent number: 11444237Abstract: A spin orbit torque (SOT) memory device includes a SOT electrode having a spin orbit coupling material. The SOT electrode has a first sidewall and a second sidewall opposite to the first sidewall. The SOT memory device further includes a magnetic tunnel junction device on a portion of the SOT electrode. A first MTJ sidewall intersects the first SOT sidewall and a portion of the first MTJ sidewall and the SOT sidewall has a continuous first slope. The MTJ device has a second sidewall that does not extend beyond the second SOT sidewall and at least a portion of the second MTJ sidewall has a second slope.Type: GrantFiled: June 29, 2018Date of Patent: September 13, 2022Assignee: Intel CorporationInventors: Noriyuki Sato, Tanay Gosavi, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin O'Brien, Christopher Wiegand, Angeline Smith, Tofizur Rahman, Ian Young, Ben Buford
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Publication number: 20220278227Abstract: Tunneling Field Effect Transistors (TFETs) are promising devices in that they promise significant performance increase and energy consumption decrease due to a steeper subthreshold slope (for example, smaller sub-threshold swing). In various embodiments, vertical fin-based TFETs can be fabricated in trenches, for example, silicon trenches. In another embodiment, vertical TFETs can be used on different material systems acting as a substrate and/or trenches (for example, Si, Ge, III-V semiconductors, GaN, and the like). In one embodiment, the tunneling direction in the channel of the vertical TFET can be perpendicular to the Si substrates. In one embodiment, this can be different than the tunneling direction in the channel of lateral TFETs.Type: ApplicationFiled: May 16, 2022Publication date: September 1, 2022Applicant: Intel CorporationInventors: Cheng-Ying Huang, Jack Kavalieros, Ian Young, Matthew Metz, Willy Rachmady, Uygar Avci, Ashish Agrawal, Benjamin Chu-Kung
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Patent number: 11417830Abstract: Embodiments herein relate to magnetically doping a spin orbit torque electrode (SOT) in a magnetic random access memory apparatus. In particular, the apparatus may include a free layer of a magnetic tunnel junction (MTJ) coupled to a SOT electrode that is magnetically doped to apply an effective magnetic field on the free layer, where the free layer has a magnetic polarization in a first direction and where current flowing through the magnetically doped SOT electrode is to cause the magnetic polarization of the free layer to change to a second direction that is substantially opposite to the first direction.Type: GrantFiled: June 29, 2018Date of Patent: August 16, 2022Assignee: Intel CorporationInventors: Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen, Kaan Oguz, Kevin O'Brien, Noriyuki Sato, Ian Young, Dmitri Nikonov
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Patent number: 11416165Abstract: The present disclosure is directed to systems and methods of implementing a neural network using in-memory, bit-serial, mathematical operations performed by a pipelined SRAM architecture (bit-serial PISA) circuitry disposed in on-chip processor memory circuitry. The on-chip processor memory circuitry may include processor last level cache (LLC) circuitry. The bit-serial PISA circuitry is coupled to PISA memory circuitry via a relatively high-bandwidth connection to beneficially facilitate the storage and retrieval of layer weights by the bit-serial PISA circuitry during execution. Direct memory access (DMA) circuitry transfers the neural network model and input data from system memory to the bit-serial PISA memory and also transfers output data from the PISA memory circuitry to system memory circuitry.Type: GrantFiled: October 15, 2018Date of Patent: August 16, 2022Assignee: Intel CorporationInventors: Amrita Mathuriya, Sasikanth Manipatruni, Victor Lee, Huseyin Sumbul, Gregory Chen, Raghavan Kumar, Phil Knag, Ram Krishnamurthy, Ian Young, Abhishek Sharma
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Publication number: 20220253285Abstract: An analog multiplication circuit includes switched capacitors to multiply digital operands in an analog representation and output a digital result with an analog-to-digital convertor. The capacitors are arranged with a capacitance according to the respective value of the digital bit inputs. To perform the multiplication, the capacitors are selectively charged according to the first operand of the multiplication. The capacitors are then connected to a common interconnect for charge sharing across the capacitors, averaging the charge according to the charge determined by the first operand. The capacitor are then maintained or discharged according to a second operand, such that the remaining charge represents a number of “copies” of the averaged charge. The capacitors are then averaged and output for conversion by an analog-to-digital convertor. This circuit may be repeated to construct a multiply-and-accumulate circuit by combining charges from several such multiplication circuits.Type: ApplicationFiled: April 26, 2022Publication date: August 11, 2022Applicant: Intel CorporationInventors: Yu-Lin Chao, Clifford Lu Ong, Dmitri E. Nikonov, Ian A. Young, Eric A. Karl
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Patent number: 11410021Abstract: Techniques are provided for implementing a recurrent neuron (RN) using magneto-electric spin orbit (MESO) logic. An RN implementing the techniques according to an embodiment includes a first MESO device to apply a threshold function to an input signal provided at a magnetization port of the MESO device, and scale the result by a first weighting factor supplied at an input port of the MESO device to generate an RN output signal. The RN further includes a second MESO device to receive the RN output signal at a magnetization port of the second MESO device and generate a scaled previous RN state value. The scaled previous state value is a scaled and time delayed version of the RN output signal based on a second weighting factor. The RN input signal is a summation of the scaled previous state value of the RN with weighted synaptic input signals provided to the RN.Type: GrantFiled: October 30, 2018Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Sasikanth Manipatruni, Dmitri Nikonov, Ian Young
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Patent number: 11411046Abstract: Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.Type: GrantFiled: September 11, 2018Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Sasikanth Manipatruni, Tanay Gosavi, Dmitri Nikonov, Ian Young
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Patent number: 11411172Abstract: An apparatus is provided which comprises a full adder including magnetoelectric material and spin orbit material. In some embodiments, the adder includes: a 3-bit carry generation structure and a multi-bit sum generation structure coupled to the 3-bit carry generation structure. In some embodiments, the 3-bit carry generation structure includes at least three cells comprising magnetoelectric material and spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output. In some embodiments, the multi-bit sum generation structure includes at least four cells comprising magnetoelectric material and spin orbit material, wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output.Type: GrantFiled: September 13, 2018Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Huichu Liu, Sasikanth Manipatruni, Daniel Morris, Kaushik Vaidyanathan, Tanay Karnik, Ian Young
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Patent number: 11411047Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., a magnetic tunneling junction or spin valve). The apparatus further includes a structure (e.g., an interconnect) comprising spin orbit material, the structure adjacent to the magnetic junction; first and second transistors. The first transistor is coupled to a bit-line and a first word-line, wherein the first transistor is adjacent to the magnetic junction. The second transistor is coupled to a first select-line and a second word-line, wherein the second transistor is adjacent to the structure, wherein the interconnect is coupled to a second select-line, and wherein the magnetic junction is between the first and second transistors.Type: GrantFiled: September 11, 2018Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Sasikanth Manipatruni, Christopher Wiegand, Tanay Gosavi, Ian Young
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Patent number: 11404562Abstract: Disclosed herein are tunneling field effect transistors (TFETs), and related methods and computing devices. In some embodiments, a TFET may include: a first source/drain material having a p-type conductivity; a second source/drain material having an n-type conductivity; a channel material at least partially between the first source/drain material and the second source/drain material, wherein the channel material has a first side face and a second side face opposite the first side face; and a gate above the channel material, on the first side face, and on the second side face.Type: GrantFiled: August 18, 2017Date of Patent: August 2, 2022Assignee: Intel CorporationInventors: Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Ashish Agrawal, Benjamin Chu-Kung, Uygar E. Avci, Jack T. Kavalieros, Ian A. Young
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Patent number: 11398596Abstract: A memory device comprises a substrate having a front side and a backside, wherein a first conductive line is on the backside and a second conductive line is on the front side. A transistor is on the front side between the second conductive line and the substrate. A magnetic tunnel junction (MTJ) is on the backside between the first conductive line and the substrate, wherein one end of the MTJ is coupled through the substrate to the transistor and an opposite end of the MTJ is connected to the first conductive line, and wherein the transistor is further connected to the second conductive line on the front side.Type: GrantFiled: June 28, 2018Date of Patent: July 26, 2022Assignee: Intel CorporationInventors: Sasikanth Manipatruni, Tanay Gosavi, Ian Young, Dmitri Nikonov
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Patent number: 11398562Abstract: An apparatus is provided which comprises: a first stack comprising a magnetic insulating material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene; a second stack comprising an MI material and a TMD, wherein the first and second stacks are separated by an insulating material (e.g., oxide); a magnet (e.g., a ferromagnet or a paramagnet) adjacent to the TMDs of the first and second stacks, and also adjacent to the insulating material; and a magnetoelectric material (e.g., (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, or (SmBi)FeO3) adjacent to the magnet.Type: GrantFiled: June 14, 2018Date of Patent: July 26, 2022Assignee: Intel CorporationInventors: Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Sou-Chi Chang, Dmitri Nikonov, Ian A. Young
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Publication number: 20220231035Abstract: Described herein are anti-ferroelectric (AFE) memory cells and corresponding methods and devices. For example, in some embodiments, an AFE memory cell disclosed herein includes a capacitor employing an AFE material between two capacitor electrodes. Applying a voltage to one electrode of such capacitor allows boosting the charge at the other electrode, where nonlinear behavior of the AFE material between the two electrodes may advantageously manifest itself in that, for a given voltage applied to the first electrode, a factor by which the charge is boosted at the second electrode of the capacitor may be substantially different for different values of charge at that electrode before the boost. Connecting the second capacitor electrode to a storage node of the memory cell may then allow boosting the charge on the storage node so that different logic states of the memory cell become more clearly resolvable, enabling increased retention times.Type: ApplicationFiled: April 5, 2022Publication date: July 21, 2022Applicant: Intel CorporationInventors: Daniel H. Morris, Uygar E. Avci, Ian A. Young
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Patent number: 11393515Abstract: An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.Type: GrantFiled: June 14, 2018Date of Patent: July 19, 2022Assignee: Intel CorporationInventors: Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri Nikonov, Benjamin Buford, Kaan Oguz, John J. Plombon, Ian A. Young
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Patent number: 11387404Abstract: An apparatus is provided which comprises one or more magnetoelectric spin orbit (MESO) minority gates with different peripheral complementary metal oxide semiconductor (CMOS) circuit techniques in the device layer including: (1) current mirroring, (2) complementary supply voltages, (3) asymmetrical transistor sizing, and (4) using transmission gates. These MESO minority gates use the multi-phase clock to prevent back propagation of current so that MESO gate can correctly process the input data.Type: GrantFiled: September 13, 2018Date of Patent: July 12, 2022Assignee: Intel CorporationInventors: Huichu Liu, Tanay Karnik, Sasikanth Manipatruni, Daniel Morris, Kaushik Vaidyanathan, Ian Young
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Patent number: 11374163Abstract: A low power, energy efficient, nonvolatile, high-speed memory apparatus is provided that can function at extremely low temperatures (e.g., less than 30 degree Kelvin). The apparatus includes: a first structure comprising a magnet having free or unpinned magnetization; a second structure comprising Type-II multiferroic material, wherein the second structure is adjacent to the first structure; and an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the first structure.Type: GrantFiled: June 19, 2018Date of Patent: June 28, 2022Assignee: Intel CorporationInventors: Tanay Gosavi, Chia-Ching Lin, Sasikanth Manipatruni, Dmitri Nikonov, Ian Young
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Patent number: 11374164Abstract: Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.Type: GrantFiled: June 29, 2018Date of Patent: June 28, 2022Assignee: Intel CorporationInventors: Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Christopher Wiegand, Angeline Smith, Noriyuki Sato, Kevin O'Brien, Benjamin Buford, Ian Young, Md Tofizur Rahman
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Publication number: 20220199519Abstract: Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. The first capacitor dielectric is or includes a perovskite high-k dielectric material. A second electrode plate is on the first capacitor dielectric and has a portion over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and has a portion over and parallel with the second electrode plate.Type: ApplicationFiled: December 21, 2020Publication date: June 23, 2022Inventors: Chia-Ching LIN, Sou-Chi CHANG, Kaan OGUZ, I-Cheng TUNG, Arnab SEN GUPTA, Ian A. YOUNG, Uygar E. AVCI, Matthew V. METZ, Ashish Verma PENUMATCHA, Anandi ROY
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GATE DIELECTRICS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTORS TRANSISTORS AND METHODS OF FABRICATION
Publication number: 20220199619Abstract: A complementary metal oxide semiconductor (CMOS) transistor includes a first transistor with a first gate dielectric layer above a first channel, where the first gate dielectric layer includes Hf1-xZxO2, where 0.33<x<0.5. The first transistor further includes a first gate electrode on the first gate dielectric layer and a first source region and a first drain region on opposite sides of the first gate electrode. The CMOS transistor further includes a second transistor adjacent to the first transistor. The second transistor includes a second gate dielectric layer above a second channel, where the second gate dielectric layer includes Hf1-xZxO2, where 0.5<x<0.99, a second gate electrode on the second gate dielectric layer and a second source region and a second drain region on opposite sides of the second gate electrode.Type: ApplicationFiled: December 23, 2020Publication date: June 23, 2022Applicant: Intel CorporationInventors: Ashish Verma Penumatcha, Seung Hoon Sung, Jack Kavalieros, Uygar Avci, Tristan Tronic, Shriram Shivaraman, Devin Merrill, Tobias Brown-Heft, Kirby Maxey, Matthew Metz, Ian Young