Patents by Inventor Ichiro Ishikawa

Ichiro Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240176224
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Application
    Filed: December 22, 2023
    Publication date: May 30, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Shunya TAKI, Takuma KATO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20240168370
    Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625 MP1+MP2?1000??(1).
    Type: Application
    Filed: October 20, 2023
    Publication date: May 23, 2024
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Publication number: 20240152044
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Shunya TAKI, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Patent number: 11914284
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Grant
    Filed: July 3, 2023
    Date of Patent: February 27, 2024
    Assignee: AGC Inc.
    Inventors: Daijiro Akagi, Shunya Taki, Takuma Kato, Ichiro Ishikawa, Kenichi Sasaki
  • Publication number: 20240045319
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Application
    Filed: October 17, 2023
    Publication date: February 8, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo Kawahara, Toshiyuki Uno, Ichiro Ishikawa, Kenichi Sakaki
  • Patent number: 11829065
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625MP1+MP2?1000.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: November 28, 2023
    Assignee: AGC Inc.
    Inventors: Shunya Taki, Hiroaki Iwaoka, Daijiro Akagi, Ichiro Ishikawa
  • Patent number: 11822229
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: November 21, 2023
    Assignee: AGC Inc.
    Inventors: Daijiro Akagi, Hirotomo Kawahara, Toshiyuki Uno, Ichiro Ishikawa, Kenichi Sasaki
  • Publication number: 20230350285
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
    Type: Application
    Filed: July 3, 2023
    Publication date: November 2, 2023
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Shunya TAKI, Takuma KATO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20230288794
    Abstract: A reflective mask blank for EUV lithography, includes, in the following order, a substrate, a multilayer reflective film reflecting EUV light, a protective film for the multilayer reflective film, and an absorption layer absorbing EUV light, in which the protective film includes rhodium (Rh) or a rhodium material including Rh and at least one element selected from the group consisting of nitrogen (N), oxygen (O), carbon (C), boron (B), ruthenium (Ru), niobium (Nb), molybdenum (Mo), tantalum (Ta), iridium (Ir), palladium (Pd), zirconium (Zr), and titanium (Ti).
    Type: Application
    Filed: May 23, 2023
    Publication date: September 14, 2023
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Publication number: 20230251564
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625 MP1+MP2?1000.
    Type: Application
    Filed: March 31, 2023
    Publication date: August 10, 2023
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Publication number: 20220293312
    Abstract: An electrical steel sheet includes a main surface and an end surface. The electrical steel sheet includes a base material part and an end surface nitrided layer that is provided on the end surface in a manner adjacent to the base material part and that contains nitrogen. The end surface nitrided layer has a surface hardness of 430 HV or more and 1250 HV or less. The end surface contains nitrogen in an amount higher than a nitrogen concentration at the main surface.
    Type: Application
    Filed: August 13, 2019
    Publication date: September 15, 2022
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Ichiro ISHIKAWA, Takeshi NODA, Kazuhiro OGAWA
  • Publication number: 20220035234
    Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
    Type: Application
    Filed: July 22, 2021
    Publication date: February 3, 2022
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hirotomo KAWAHARA, Toshiyuki UNO, Ichiro ISHIKAWA, Kenichi SASAKI
  • Patent number: 9243855
    Abstract: A cooling structure for cooling a heat generating element allows cooling fluid to circulate around the heat generating element or a base material with the heat generating element disposed thereon. The cooling structure is provided with a vortex-flow generating portion which extends in a direction intersecting a circulation direction of the cooling fluid, and which generates a vortex flow depending on the flow rate of cooling fluid.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 26, 2016
    Assignee: NISSAN MOTOR CO., LTD.
    Inventors: Yousuke Koizuka, Tatsuomi Nakayama, Ichiro Ishikawa
  • Publication number: 20150168084
    Abstract: A cooling structure for cooling a heat generating element allows cooling fluid to circulate around the heat generating element or a base material with the heat generating element disposed thereon. The cooling structure is provided with a vortex-flow generating portion which extends in a direction intersecting a circulation direction of the cooling fluid, and which generates a vortex flow depending on the flow rate of cooling fluid. A cooling structure for cooling a heat generating element allows cooling fluid to circulate around the heat generating element or a base material with the heat generating element disposed thereon. The cooling structure is provided with a vortex-flow generating portion, which extends in a direction intersecting a circulation direction of the cooling fluid, and which generates a vortex flow depending on the flow rate of cooling fluid.
    Type: Application
    Filed: March 15, 2013
    Publication date: June 18, 2015
    Inventors: Yousuke Koizuka, Tatsuomi Nakayama, Ichiro Ishikawa
  • Patent number: 6608675
    Abstract: Higher-order structure in the transparent optical polymer molding such as CD, DVD is enabled to be visualized and observed non-destructively and non-contactingly in a wide range of a microscopic level to a macroscopic level by applying light with specific wavelength to the transparent optical polymer molding from an incident optical system, and visualizing light with specific wavelength selected among a reflected wave and/or a transmitted wave of the light applied to the transparent optical polymer molding through an outgoing optical system.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: August 19, 2003
    Assignee: Nissan Arc, Ltd.
    Inventor: Ichiro Ishikawa
  • Patent number: 4946417
    Abstract: A running toy shooting apparatus having a toy holder which holds a running toy having a flywheel as drive wheel and is movable between a starting position and a shooting position located in front of the starting position, a spring for driving the toy holder up to the shooting position, a stopper for retaining the running toy held by the holder means, a releasing means for releasing the running toy from the stopper to move the toy holder to the shooting position by the spring, and an energizer for energizing the flywheel of the running toy at the starting position.
    Type: Grant
    Filed: August 18, 1989
    Date of Patent: August 7, 1990
    Assignee: Sente Creations Co., Ltd.
    Inventors: Ichiro Ishikawa, Hiroyoshi Kamei
  • Patent number: 4939156
    Abstract: As new compounds are now provided 7,7,8,8,-tetramethyl-cis-diaza-bicyclo{4.2.0}octane-3,5,-dione derivatives which have an activity to induce the differentiation of tumor cells and are useful as antitumor agent, and which also have an antiviral activity against various viruses and are useful as antiviral agent. These new derivatives may be produced by a photo-addition reaction of a uracil compound with 2,3-dimethyl-2-butene.
    Type: Grant
    Filed: July 8, 1988
    Date of Patent: July 3, 1990
    Assignee: Meiji Seika Kaisha, Ltd.
    Inventors: Motoo Hozumi, Tsuneo Itoh, Yoshio Honma, Norio Kawahara, Ichiro Ishikawa, Haruo Ogura