Abstract: Provided is a sensitizing solution for electroless plating which can easily dissolve an Sn compound therein without the use of acid, and thus can be used for a long period of time without impairing the uniformity of a metal plating coating. The sensitizing solution for electroless plating is a sensitizing solution for electroless plating including: an Sn compound; and a solvent, wherein the solvent contains 10 vol. % or more of a water-soluble alcohol. In addition, provided is an electroless plating method including: a pretreatment process of immersing a body to be plated into a pretreatment solution; and a plating process of immersing the body to be plated after being subjected to the pretreatment process into a plating solution, wherein the sensitizing solution for electroless plating according to the invention is used as the pretreatment solution.

Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Abstract: A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode.

Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Abstract: A ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode, and a top electrode formed on the ferroelectric layer. A plurality of projection electrodes are formed on the bottom electrode.

Abstract: A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Abstract: A packaging method which makes possible firm connection of electronic components having bump areas and a wiring board having a pad electrode portion with secure electrical conduction is to be provided. To achieve this object, according to the packaging method which makes possible firm connection of electronic components having bump areas and a wiring board having a pad electrode portion with secure electrical conduction, the surface of the pad electrode portion of the wiring board has a roughened surface of 0.1 ?m (Rzjis) or more, a layer of thermosetting adhesive resin in a semi-cured stage is provided over the roughened surface of the pad electrode portion, the bump areas of electronic components and the pad electrode portion of the wiring board are placed one over the other to be arranged opposite each other, and crimped under pressure and heating. The roughened surface of the pad electrode portion of the wiring board is obtained by etching the pad electrodes or otherwise.

Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Abstract: A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

Abstract: A capacitor capable of being incorporated into a packaging substrate, characterized in that the capacitor comprises a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Abstract: A ferroelectric capacitor includes a bottom electrode, a ferroelectric layer formed on the bottom electrode, and a top electrode formed on the ferroelectric layer. A plurality of projection electrodes are formed on the bottom electrode.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Abstract: An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZrxTi1−xSbyO3 (where 0 <x<1, 0.0001≦y≦0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Abstract: The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.

Abstract: An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0<x<1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.