Abstract: The present invention provides an image display apparatus capable of reducing a hold blur in accordance with circumstances. A black inserting process for inserting a black display area into a display screen in a liquid crystal display panel 2 according to at least one of substance of a video signal in an original frame and brightness of viewing environment for user is performed. Concretely, for example, when a video signal in the original frame is a cinema signal (film signal), the black inserting process of inserting a black display area into the display screen in the liquid crystal display panel 2 is performed. More concretely, for example, a backlight driving unit 71 performs switching drive between turn-on and turn-off of a backlight 72 so that the black inserting process is performed on the display screen in the liquid crystal display panel 2.

Abstract: A liquid crystal display includes: a light source section including a plurality of lighting sections; a light source driving section for determining a light intensity of each lighting section according to the image signal inputted and driving the light source section so that each lighting section is independently activated with the light intensity determined; a liquid crystal display panel; and a display driving section for driving the liquid crystal display panel based on the image signal. In a case that a display region corresponding to the lighting section includes a high-luminance part and a low-luminance part, the display driving section corrects the image signal in the low-luminance part so that the display luminance of the low-luminance part results in the same level as the display luminance under a maximum light intensity of the corresponding lighting section, and drives the low-luminance part according to the image signal corrected.

Abstract: A photo-electric converting apparatus 100 has an arrangement in which a photo-electric converting apparatus 3 is formed on the surface of a substrate 1, an insulating film 11 is formed on the substrate 1, an uneven portion 18 having concavities and convexities in the thickness direction of the substrate 1 is formed on at least a part of the interface between the substrate 1 of the photo-electric converting portion and the insulating film 11 and a recombination region 19 for decreasing a dark current is formed so as to contain the uneven portion 18 within the photo-electric converting portion 3. This photo-electric converting apparatus becomes able to obtain a high sensitivity characteristic and to suppress a dark current from being increased by a decrease of the interface states.

Abstract: According to the invention, a driving method for a solid-state imaging device includes: a first holding step of holding electric charges which cause smear and are obtained from incident light in a first holding unit, in a previous field period which appears temporally earlier than a predetermined field; a second holding step of holding signal charges obtained from the incident light in a second holding unit, in the predetermined field period; a first equalization step of equalizing electric charges which cause smear and are obtained from the incident light in a subsequent field period which appears later than the predetermined field and the electric charges which cause smear and are held by the first holding unit; and a first subtraction step of subtracting the electric charges which cause smear and are equalized in the first equalization step from the signal charges which are held by the second holding unit.

Abstract: The present invention is to provide a driving method for a solid-state imaging device which suppresses increase of smear and occurrence of image blur when imaging a moving object. In the driving method, for each row of the color filters arranged in the Bayer pattern, for a pixel, a signal charge is held in a first holding unit, which is generated in a preceding field period temporally preceding a predetermined field out of two different fields temporally equidistant from the predetermined field, a first signal charge is held in a second holding unit, which is generated within the predetermined field, the signal charge held in the first holding unit and a signal charge which is generated in a following field period are added, and a second signal charge obtained by the addition and the first signal charge are respectively outputted to outside of the solid-state imaging device.

Abstract: A display apparatus includes a display section, a backlight, and a drive section. The display section is formed from a liquid crystal display apparatus of the transmission type having a display area formed from pixels arranged in a matrix. The backlight is formed from a plurality of light source units disposed individually corresponding to a plurality of display area units which form the display area and configured to illuminate the back side of the display section. The drive section is configured to drive the display section and the backlight based on input signals from the outside. The drive section includes a control section configured to control a light emitting state of the light source unit corresponding to each of the display area units based on a display area unit internal maximum input signal which indicates a maximum value from among the input signals corresponding to the display area unit.

Abstract: A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0?x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.

Abstract: There is provided a driving method for a solid-state imaging device in which the number of effective pixels is not reduced, a difference between resolutions in a vertical direction and a horizontal direction is not caused, blurring of an image is reduced as compared with conventional cases, image inconsistency at high luminance is not caused, and the dynamic range is wide.

Abstract: A light-detecting device, comprising: a semiconductor substrate 101 that is composed of silicon as a base material, and contains carbon at a predetermined concentration; and an epitaxial layer 102 that is formed on the semiconductor substrate 101 and composed of silicon as a base material, the epitaxial layer 102 including a light-detecting unit (mainly 104) a predetermined distance away from the semiconductor substrate 101, wherein the semiconductor substrate 101 is formed using a crystal growth method from melt obtained by melting a material containing silicon and a material containing carbon so that carbon is contained in the semiconductor substrate 101 at the predetermined concentration.

Abstract: A solid-state imaging device includes a semiconductor substrate having a principal surface, and three or more pixel regions formed in at least one direction of two different directions along the principal surface of the semiconductor substrate. Each pixel region includes a plurality of photoelectric conversion regions having different sensitivities. The photoelectric conversion region having the highest sensitivity in peripheral pixel regions of the pixel regions has a higher sensitivity than the photoelectric conversion region having the highest sensitivity in a central pixel region of the pixel regions.

Abstract: A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0?x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.

Abstract: A photo-electric converting apparatus 100 has an arrangement in which a photo-electric converting apparatus 3 is formed on the surface of a substrate 1, an insulating film 11 is formed on the substrate 1, an uneven portion 18 having concavities and convexities in the thickness direction of the substrate 1 is formed on at least a part of the interface between the substrate 1 of the photo-electric converting portion 3 and the insulating film 11 and a recombination region 19 for decreasing a dark current is formed so as to contain the uneven portion 18 within the photo-electric converting portion 3. This photo-electric converting apparatus becomes able to obtain a high sensitivity characteristic and to suppress a dark current from being increased by a decrease of the interface states.

Abstract: A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions 5 constituting photoelectric conversion regions and a plurality of P+-type regions 6 constituting channel stop regions are formed on a P-type silicon substrate 4, and a transparent electrode 1 is further formed through an insulating film 7 on the substrate 4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode 1, and an antireflection film 8 is formed above the photoelectric conversion region 2.

Abstract: A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.

Abstract: A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.

Abstract: The present invention provides a method of forming micro lenses over a base structure of a solid state image pick-up device. The method comprises the steps of: forming a light-transmitting material layer on the base structure; and pushing a die having a die pattern against the light-transmitting material layer to transfer the die pattern of the die to the light-transmitting material layer, thereby forming micro lens patterns over the base structure.

Abstract: A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions 5 constituting photoelectric conversion regions and a plurality of P+-type regions 6 constituting channel stop regions are formed on a P-type silicon substrate 4, and a transparent electrode 1 is further formed through an insulating film 7 on the substrate 4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode 1, and an antireflection film 8 is formed above the photoelectric conversion region 2.

Abstract: A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions 5 constituting photoelectric conversion regions and a plurality of P+-type regions 6 constituting channel stop regions are formed on a P-type silicon substrate 4, and a transparent electrode 1 is further formed through an insulating film 7 on the substrate 4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode 1, and an antireflection film 8 is formed above the photoelectric conversion region 2.

Abstract: A solid-state image sensing device having: a plurality of sensing means arrayed in the form of a matrix; a charge accumulation means that is connected to the sensing means and accumulates a charge generated at the sensing means; an accumulable charge adjusting means that adjusts the amount of accumulable charge of the charge accumulation means; and a control means that controls the accumulable charge adjusting means. The control means controls the amount of accumulable charge to vary continuously or discontinuously in time series within one imaging period and within a given amount of accumulable charge of the control means.

Abstract: In a solid state image sensor comprising a plurality of photoelectric conversion regions and a plurality of transfer regions which are formed in a principal surface of a semiconductor substrate, and a plurality of transfer electrodes formed above the transfer regions, a first insulating film, an antireflection film and a second insulating film are formed in the named order on the photoelectric conversion regions. The antireflection film has a refractive index larger than that of the second insulating film but smaller than that of the semiconductor substrate. The stacked film composed of the first insulating film, the antireflection film and the second insulating film, is formed, in the transfer regions, to extend over the transfer electrode which is formed a third insulating film formed on the semiconductor substrate.