Patents by Inventor Ichiro Shiono

Ichiro Shiono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10996346
    Abstract: An ?-ray measuring device which is provided with: a box-shaped chamber that has a gas inlet and a gas outlet; a cathode film which is provided within the box-shaped chamber; a plurality of anode wires which are arranged parallel to each other at a distance from the cathode film, while being electrically connected to each other and having a diameter of from 1 ?m to 30 ?m (inclusive); and a plurality of cathode wires which are arranged parallel to each other at a distance from the anode wires, while being electrically connected to the cathode film and having a diameter of from 1 ?m to 30 ?m (inclusive).
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: May 4, 2021
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yoshinori Sawada, Ichiro Shiono
  • Publication number: 20210055430
    Abstract: An ?-ray measuring device which is provided with: a box-shaped chamber that has a gas inlet and a gas outlet; a cathode film which is provided within the box-shaped chamber; a plurality of anode wires which are arranged parallel to each other at a distance from the cathode film, while being electrically connected to each other and having a diameter of from 1 ?m to 30 ?m (inclusive); and a plurality of cathode wires which are arranged parallel to each other at a distance from the anode wires, while being electrically connected to the cathode film and having a diameter of from 1 ?m to 30 ?m (inclusive).
    Type: Application
    Filed: April 22, 2019
    Publication date: February 25, 2021
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yoshinori Sawada, Ichiro Shiono
  • Patent number: 10577687
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: March 3, 2020
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono
  • Publication number: 20190284685
    Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.
    Type: Application
    Filed: May 23, 2019
    Publication date: September 19, 2019
    Inventors: Mitsuhiro MIYAUCHI, Takanori MURATA, Takuya SUGAWARA, Ichiro SHIONO, Yousong JIANG, Tatsuya HAYASHI, Ekishu NAGAE
  • Patent number: 10415135
    Abstract: A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: September 17, 2019
    Assignee: SHINCRON CO., LTD.
    Inventors: Yohei Hinata, Kyokuyo Sai, Yoshiyuki Otaki, Ichiro Shiono, Yousong Jiang
  • Publication number: 20190271069
    Abstract: A Cu—Ga sputtering target of the present invention includes, as a composition of metal components, Ga in a range of 5 at % to 60 at %, at least one additive element selected from the group consisting of K, Rb, and Cs in a range of 0.01 at % to 5 at %, and a balance including Cu and inevitable impurities, in which all or a part of the additive element is present in a state of halide particles including at least one halogen selected from the group consisting of F, Cl, Br, and I, a maximum particle size of the halide particles is 15 ?m or less, and an oxygen concentration is 1000 mass ppm or less.
    Type: Application
    Filed: July 19, 2017
    Publication date: September 5, 2019
    Applicant: Mitsubishi Materials Corporation
    Inventors: Keita UMEMOTO, Kensuke IO, Shoubin ZHANG, Ichiro SHIONO
  • Publication number: 20190249307
    Abstract: The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
    Type: Application
    Filed: April 24, 2019
    Publication date: August 15, 2019
    Applicant: SHINCRON CO., LTD.
    Inventors: Ichiro SHIONO, Ekishu NAGAE, Yousong JIANG, Takuya SUGAWARA
  • Publication number: 20190039131
    Abstract: Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.
    Type: Application
    Filed: February 8, 2017
    Publication date: February 7, 2019
    Inventors: Keita Umemoto, Shoubin Zhang, Ichiro Shiono, Kensuke Io
  • Publication number: 20170191154
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Application
    Filed: February 18, 2016
    Publication date: July 6, 2017
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono
  • Patent number: 9499897
    Abstract: Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: November 22, 2016
    Assignee: SHINCRON CO., LTD.
    Inventors: Yousong Jiang, Ichiro Shiono, Mitsuhiro Miyauchi, Takaaki Aoyama, Tatsuya Hayashi, Ekishu Nagae
  • Patent number: 9422620
    Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: August 23, 2016
    Assignee: SHINCRON CO., LTD.
    Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono
  • Publication number: 20160177451
    Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
    Type: Application
    Filed: February 29, 2016
    Publication date: June 23, 2016
    Applicant: SHINCRON CO., LTD.
    Inventors: Ichiro SHIONO, Ekishu NAGAE, Yousong JIANG, Takuya SUGAWARA
  • Patent number: 9365920
    Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: June 14, 2016
    Assignee: SHINCRON CO., LTD.
    Inventors: Ichiro Shiono, Ekishu Nagae, Yousong Jiang, Takuya Sugawara
  • Patent number: 9315415
    Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: April 19, 2016
    Assignee: Shincron Co., Ltd.
    Inventors: Ichiro Shiono, Ekishu Nagae, Yousong Jiang, Takuya Sugawara
  • Patent number: 9157146
    Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: October 13, 2015
    Assignee: SHINCRON CO., LTD.
    Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono, Ekishu Nagae
  • Publication number: 20150284842
    Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.
    Type: Application
    Filed: October 23, 2012
    Publication date: October 8, 2015
    Inventors: Mitsuhiro Miyauchi, Takanori Murata, Takuya Sugawara, Ichiro Shiono, Yousong Jiang, Tatsuya Hayashi, Ekishu Nagae
  • Publication number: 20140356601
    Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.
    Type: Application
    Filed: February 16, 2012
    Publication date: December 4, 2014
    Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono
  • Patent number: 8826856
    Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: September 9, 2014
    Assignee: Shincron Co., Ltd.
    Inventors: Ekishu Nagae, Yousong Jiang, Ichiro Shiono, Tadayuki Shimizu, Tatsuya Hayashi, Makoto Furukawa, Takanori Murata
  • Publication number: 20140205762
    Abstract: A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source.
    Type: Application
    Filed: September 30, 2011
    Publication date: July 24, 2014
    Applicant: SHINCRON CO., LTD.
    Inventors: Ichiro Shiono, Mitsuhiro Miyauchi, Yousong Jiang
  • Publication number: 20140205844
    Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.
    Type: Application
    Filed: August 2, 2011
    Publication date: July 24, 2014
    Applicant: SHINCRON CO., LTD.
    Inventors: Takuya Sugawara, Hikaru Aoshima, Yousong Jiang, Ichiro Shiono