Patents by Inventor Ichiro Yamashita

Ichiro Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5646420
    Abstract: The single electron transistor can be operated at room temperature. The distance between the electrodes 5, 5 can be adjusted by the length of the protein and/or the wideness of the lipid bilayer and the distance between the quantum dot 4 and one of the electrodes 5 can be adjusted in units of 1.5 .ANG. by means of .alpha.-helix confirmation of a G segment of the protein.
    Type: Grant
    Filed: February 5, 1996
    Date of Patent: July 8, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Ichiro Yamashita
  • Patent number: 5398043
    Abstract: A plurality of ON signal voltages are applied to a thin film transistor (TFT) within one field period, thereby transmitting an image signal voltage to a pixel electrode, two types of modulation signals are alternately supplied to a first wiring (17) at every field during an OFF period of the thin film transistor so that the potential of the pixel electrode is changed, and the change of the potential is superimposed on and/or offset by an image signal voltage so as to apply a resultant voltage to a display material to be driven. Before the termination of a first ON period of the plurality of ON signal voltages applied to the thin film transistor, a part of the potential of the modulation signal is varied.
    Type: Grant
    Filed: October 8, 1992
    Date of Patent: March 14, 1995
    Assignee: Matsushita Electric Industrial Co. Ltd.
    Inventors: Etsuya Takeda, Ichiro Yamashita, Takashi Tsukada, Katsumi Adachi
  • Patent number: 5371746
    Abstract: A program debugging system for a distributed data processing system of the type in which a plurality of processes communicate with one another to realize their concurrent and parallel operations. The debugging system includes a plurality of satellite debugging units, coupled respectively with the plurality of processes, for debugging the processes; a central debugging unit for remotely controlling the plurality of satellite debugging units; and a remote-procedure-call detecting unit for previously detecting an issuance or an end of a remote procedure call in the process to be debugged by the satellite debugging units.
    Type: Grant
    Filed: March 23, 1992
    Date of Patent: December 6, 1994
    Assignee: Fuji Xerox Co., Ltd.
    Inventors: Ichiro Yamashita, Shigehisa Kawabe
  • Patent number: 5369337
    Abstract: A DC or high frequency ion source comprising a hollow cathode and a substantially hollow anode for applying a DC or alternating voltage; a gas inlet disposed at a first side of the cathode for supplying a discharge gas into the cathode; a cathode heater disposed between the anode and the cathode; a magnet disposed adjacent the anode to thereby improve the uniformity of a plasma; an ion extraction outlet disposed at a second side of the cathode opposite to the gas inlet and having an elongated rectangular shape; and an ion extraction electrode and an acceleration electrode for controlling the energy of extracted ions. Both the anode and cathode comprise substantially hollow boxes. The cathode includes an elongated rectangular cross section and is disposed inside the substantially hollow anode. The ion extraction electrode and the acceleration electrode have an elongated rectangular shape and an opening coextensive with the ion extraction outlet.
    Type: Grant
    Filed: August 12, 1993
    Date of Patent: November 29, 1994
    Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
    Inventors: Kenichi Yanagi, Mitsuo Kato, Kazuya Tsurusaki, Toshio Taguchi, Kenji Atarashiya, Tadashi Rokkaku, Ichiro Yamashita
  • Patent number: 5303072
    Abstract: An improved arrangement of a liquid crystal display device is provided in which the redundancy of a known but unwanted TFT (thin film transistor) defect is suppressed so that the yield per finished liquid crystal display device product can be increased without deterioration in the picture quality. Each pixel of the liquid crystal display device arranged at an intersection of one of scanning lines and one of signal lines is provided with two or three TFTs and also, a storage capacitor which is formed of a portion of a gate insulating layer and is sandwiched between its electrode and a preceding scanning line in the previous row using no extra masking procedure. The source, drain and gate electrodes of both the first and third TFTs are respectively coupled to the same signal line, the electrode of the same pixel and the adjacent scanning lines.
    Type: Grant
    Filed: June 26, 1991
    Date of Patent: April 12, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Takeda, Sadayoshi Hotta, Ichiro Yamashita, Tatsuhiko Tamura, Yoneharu Takubo
  • Patent number: 5288386
    Abstract: A sputtering apparatus including two electrodes, a sputtering target disposed on one of the electrodes, and a gas supply for supplying a discharge gas in a vacuum to produce an electric discharge between the two electrodes and whereby particles sputtered from the target due to impact thereon of ions produced by the discharge, are deposited on a substrate. The target disposed on one electrode is formed into an elongated band and the other electrode is disposed so as to enclose the target. The other electrode is also provided with a magnet for producing a magnetic field thereon, and further includes a narrow elongated slot which defines a narrow sputter particle outlet. The narrow sputter particle outlet permits a pressure to exist near the electrical discharge which is higher than the pressure near the substrate. According to a preferred embodiment, the sputtering apparatus has an ion source combined integrally therewith.
    Type: Grant
    Filed: July 17, 1992
    Date of Patent: February 22, 1994
    Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
    Inventors: Kenichi Yanagi, Mitsuo Kato, Kazuya Tsurusaki, Toshio Taguchi, Kenji Atarashiya, Tadashi Rokkaku, Ichiro Yamashita
  • Patent number: 5264189
    Abstract: An apparatus for growing silicon single-crystals comprising a crucible containing a silicon melt, a furnace for housing the crucible and having an opening located above the crucible, a pulling mechanism for pulling a seed crystal from the melt to grow a silicon single-crystal, a cooling shell having a lower end spaced apart and located above the melt and disposed around said silicon single-crystal for cooling the silicon single crystal from a temperature of 1,050.degree. to 850.degree. C. in no more than 140 minutes as it is being pulled, and, a secondary heater for heating the silicon single crystal as it is being pulled, such that the dwelling time of the single crystal in a temperature zone of 800.degree. C. to 600.degree. C. is at least two hours. The secondary heater is disposed above the cooling shell and coaxial therewith and is arranged so as to define a space between the secondary heater and the cooling shell.
    Type: Grant
    Filed: August 21, 1992
    Date of Patent: November 23, 1993
    Assignee: Mitsubishi Materials Corporation
    Inventors: Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba
  • Patent number: 5166086
    Abstract: A self-aligned TFT array for liquid crystal display devices and a method of manufacturing the array are disclosed. A protective insulating layer on a semiconductor layer is exactly aligned with a gate electrode. A self-alignment method is used for patterning the protective insulating layer and an impurity-doped semiconductor layer on the semiconductor layer. No lift-off process is necessary.
    Type: Grant
    Filed: February 12, 1992
    Date of Patent: November 24, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Takeda, Ichiro Yamashita, Isamu Kitahiro
  • Patent number: 5137841
    Abstract: A self-aligned TFT array for liquid crystal display devices and a method of manufacturing the array are disclosed. A protective insulating layer on a semiconductor layer is exactly aligned with a gate electrode. A self-alignment method is used for patterning the protective insulating layer and an impurity-doped semiconductor layer on the semiconductor layer. No lift-off process is necessary.
    Type: Grant
    Filed: December 22, 1989
    Date of Patent: August 11, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Takeda, Ichiro Yamashita, Isamu Kitahiro
  • Patent number: 4981549
    Abstract: A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.
    Type: Grant
    Filed: February 22, 1989
    Date of Patent: January 1, 1991
    Assignees: Mitsubishi Kinzoku Kabushiki Kaisha, Japan Silicon Co., Ltd.
    Inventors: Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya
  • Patent number: 4958205
    Abstract: A self-aligned TFT array for liquid-crystal display devices and a method of manufacturing the array are disclosed. A protective insulating layer on a semiconductor layer is exactly aligned with a gate electrode. A self-alignment method is used for patterning the protective insulating layer and an impurity-doped semiconductor layer on the semiconductor layer. No lift-off process is necessary.
    Type: Grant
    Filed: April 29, 1988
    Date of Patent: September 18, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mamoru Takeda, Ichiro Yamashita, Isamu Kitahiro
  • Patent number: 4936656
    Abstract: A video projector utilizes a reflective liquid crystal light valve of the active matrix system and a polarizing beam splitter. An active matrix array circuit of the light valve has pixel electrodes arranged in a matrix mattern. The pixel electrodes each has a reflective surface for reflecting a light beam and protects corresponding switch elements from the light beam. There are provided at least two switch elements for each of the pixel electrodes so as to enhance the redundancy of the array circuit. Further, each pixel electrode is provided with a suitable additional capacitance.
    Type: Grant
    Filed: March 18, 1988
    Date of Patent: June 26, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ichiro Yamashita, Mamoru Takeda, Yoshito Miyatake, Yoneharu Takubo
  • Patent number: 4890097
    Abstract: An active matrix circuit for liquid crystal displays includes a plurality of liquid crystal pixels arranged in a matrix, a plurality of scanning lines supplied with selection pulses to select rows of the pixel matrix, a plurality of signal lines supplied with signal voltages which are supplied to the pixels in a selected row, and a plurality of switching elements responsive to the respective selection pulses for supplying the signal voltages to the respective pixels. Each pixel is controlled by two switching elements responsive to selection pulses supplied adjaent to two scanning lines. If one of the two switching elements is defective due to a manufacturing process, it is later electrically isolated from the circuit. The other one can control the respective pixel to operate normally. The switching element may be a transistor or a non-linear device.
    Type: Grant
    Filed: January 21, 1988
    Date of Patent: December 26, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ichiro Yamashita, Mamoru Takeda
  • Patent number: 4812758
    Abstract: The long-term measurement stability of a magnetostrictive effect strain or stress sensor that uses an amorphous magnetic alloy excited by a magnetic field is improved by generating a magnetic field from an electric current formed from a superposed alternating current waveform and a recurring rectangular current waveform that has a larger amplitude at its start-up and which converges to a smaller amplitude after a predetermined time period or an electric current formed from a superposed direct current component and an alternating current component having constant amplitude and a frequency that varies in a recurring manner between a high frequency and a lower frequency.
    Type: Grant
    Filed: April 18, 1986
    Date of Patent: March 14, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ichiro Yamashita, Masayuki Wakamiya, Hiroyuki Hase, Shinya Tokuono
  • Patent number: 4785671
    Abstract: A stress-sensitive sensor comprising a means for generating magnetic flux, a thin sheet of an amorphous magnetic alloy which is located in the magnetic flux and which is physically deformed in response to an external force to be measured, and a means for detecting the physical deformation as a variation of the magnetic flux which depends on the external force. The amorphous magnetic alloy consists essentially of Fe.sub.a Cr.sub.b Si.sub.c B.sub.d, in which a is a value of from 69 to 81.5 atomic percent, b is a value of from 2.5 to 6 atomic percent, c is a value of from 10 to 15 atomic percent, and d is a value from 6 to 10 atomic percent provided that a+b+c+d=100. The sensor is particularly suitable for oil pressure or torque detection.
    Type: Grant
    Filed: October 2, 1987
    Date of Patent: November 22, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masayuki Wakamiya, Ichiro Yamashita, Hiroyuki Hase, Yukihiko Ise
  • Patent number: 4780671
    Abstract: A torque sensor includes a cylindrical body disposed concentrically around a shaft and having its opposite ends secured to the surface of the shaft through elastic bodies, a layer of soft magnetic alloy having a magnetostriction property and secured to the surface of the cylindrical body, and a coil disposed concentrically around the layer with an air gap between it and the layer. The torque sensor is constructed such that a strain produced on the surface of the cylindrical body by a torque is converted into a change of a relative permeability of the soft magnetic alloy due to a reverse magnetostriction effect which is detected as a change of inductance of the coil. When the shaft thermally expands or deflects, the elastic bodies act to permit only a torque to be transmitted to the cylindrical body, so that a uniform output is provided without the influence of a thermal strain and deflection of the shaft.
    Type: Grant
    Filed: April 22, 1986
    Date of Patent: October 25, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroyuki Hase, Ichiro Yamashita, Shinya Tokuono, Masayuki Wakamiya
  • Patent number: 4765192
    Abstract: A torque sensor which includes a pair of multiple thread portions integrally formed in the surface of a rotating shaft in such a manner that one of the multiple thread portions forms a positive angle with the thrust direction of the rotating shaft and the other forms a negative angle with the thrust direction. The threads of the multiple thread portions are at least made of soft magnetic alloy having magnetostrictive properties. A pair of coils are arranged concentrically on the outer side of the multiple thread portions at a given distance therefrom. The strain produced in the surface of the rotating shaft is detected as inductance changes of the coils when the permeability of the soft magnetic alloy changes. The direction and magnitude of the torque are detected because of the difference between the inductances of the coils.
    Type: Grant
    Filed: November 10, 1986
    Date of Patent: August 23, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroyuki Hase, Ichiro Yamashita, Shinya Tokuono, Masayuki Wakamiya
  • Patent number: 4696192
    Abstract: A fluid pressure sensor includes a body made of a soft magnetic material with a groove formed therein, and a coil is installed in the body in the groove. One magnetostrictive disc is placed on the body over the groove, and two non-magnetic discs are placed over the magnetostrictive disc. A casing is provided for accommodating the body carrying the coil, the magnetostrictive disc, and the non-magnetic discs, and it is closed by a lid member which has a surface for receiving a fluid pressure. A plurality of through holes are formed in the lid member within the fluid pressure receiving surface such that the through holes extend to the non-magnetic disc at position over the groove, whereby the magnetostrictive plate is partially distorted by the fluid pressure.
    Type: Grant
    Filed: July 7, 1986
    Date of Patent: September 29, 1987
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ichiro Yamashita, Masayuki Wakamiya, Hiroyuki Hase, Shinya Tokuono
  • Patent number: 4625562
    Abstract: A stress or strain sensor including a magnetic circuit having at least a part constituted by an amorphous magnetic alloy. For detection of the inductance value of the sensor, a DC magnetic field is superposed on an AC magnetic field so that magnetic domains of the alloy tend to be aligned. The sensor output can be increased significantly over that of the conventional sensor in which only the AC magnetic field is employed, while hysteresis of the output is reduced. The temperature characteristic is also improved.
    Type: Grant
    Filed: November 1, 1984
    Date of Patent: December 2, 1986
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ichiro Yamashita, Hiroyuki Hase, Yukihiko Ise
  • Patent number: 4507523
    Abstract: An electromagnetic-induction-type position determination apparatus or digitizer for inputting or digitizing hand-written characters and graphic equipment to electronic equipment is arranged so as to have a reduced number of conductors installed on its interface plate and has a reduced number of complicated control circuits. The apparatus includes an interface plate having conductors installed in the form of a matrix and a control system for supplying two currents to two conductors in the same direction. A pick-up is moveably positioned on the interface plate for picking up two induced voltages induced by magnetic fields generated by the two currents flowing through the two conductors and a detector and processor are arranged to detect a predetermined relationship between the two induced voltages and to derive digital coordinate data based on the detected predetermined relationship.
    Type: Grant
    Filed: May 17, 1983
    Date of Patent: March 26, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshihiro Gohara, Masashi Kanno, Ichiro Yamashita