Patents by Inventor Ihor Melnyk
Ihor Melnyk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220001451Abstract: A system for manufacturing of three dimensional objects by layered deposition is provided. The system includes a base substrate for formation of three dimensional objects placed on a supporting plate; a functional assembly comprising a gas-discharge electron beam gun, a feedstock guide, a cold annular cathode and two annular anode electrodes, a high voltage power supply of the gas-discharge electron beam gun, a system of precise positioning of the supporting plate with the base substrate), a vacuum tight operation chamber, a vacuum subsystem for creating of necessary vacuum inside said operating chamber, a control system and a magnetic lens. The lens is placed on the underside of the gas-discharge electron beam gun coaxially with it and with the feedstock guide, providing the possibility of transformation of a primary hollow electron beam to the shape of a hollow inverted cone after leaving the discharge chamber of the gas-discharge electron beam gun.Type: ApplicationFiled: October 28, 2019Publication date: January 6, 2022Applicant: JOINT STOCK COMPANY "NVO "CHERVONA HVILYA"Inventors: Dmytro KOVALCHUK, Ihor MELNYK, Vitalii MELNYK, Borys TUGAI
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Patent number: 10695835Abstract: Method and system for manufacturing of three dimensional objects comprising of base substrate (18) placed on the supporting plate (30), electron beam gun (2), feed means (17) for feeding of feedstock material to melting zone, positioning system (31, 36) for positioning of said supporting plate (30) with base substrate (18), vacuum tight operating chamber (29), wherein an energy source for generating of molten pool on the substrate and for melting of feedstock material in said system is gas-discharge electron beam gun (2) with cold circular cathode (8) placed between two circular anodic electrodes placed coaxially to said cathode (8) which generates electron beam (9) in the shape of hollow inverted cone, and feedstock guide (17) is placed along the axis of said of said electron beam gun (2), and said gas-discharge electron beam gun (2) and said feedstock guide (17) are combined in one functional assembly.Type: GrantFiled: March 31, 2015Date of Patent: June 30, 2020Assignee: JOINT STOCK COMPANY “NVO CHERVONA HVILYA”Inventors: Dmytro Kovalchuk, Ihor Melnyk, Vitalii Melnyk, Borys Tugai
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Publication number: 20200156153Abstract: Method and system for manufacturing of three dimensional objects comprising of base substrate (18) placed on the supporting plate (30), electron beam gun (2), feed means (17) for feeding of feedstock material to melting zone, positioning system (31, 36) for positioning of said supporting plate (30) with base substrate (18), vacuum tight operating chamber (29), wherein an energy source for generating of molten pool on the substrate and for melting of feedstock material in said system is gas-discharge electron beam gun (2) with cold circular cathode (8) placed between two circular anodic electrodes placed coaxially to said cathode (8) which generates electron beam (9) in the shape of hollow inverted cone, and feedstock guide (17) is placed along the axis of said of said electron beam gun (2), and said gas-discharge electron beam gun (2) and said feedstock guide (17) are combined in one functional assembly.Type: ApplicationFiled: January 16, 2020Publication date: May 21, 2020Inventors: Dmytro KOVALCHUK, Ihor MELNYK, Vitalii MELNYK, Borys TUGAl
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Publication number: 20170304896Abstract: Method and system for manufacturing of three dimensional objects comprising of base substrate (18) placed on the supporting plate (30), electron beam gun (2), feed means (17) for feeding of feedstock material to melting zone, positioning system (31, 36) for positioning of said supporting plate (30) with base substrate (18), vacuum tight operating chamber (29), wherein an energy source for generating of molten pool on the substrate and for melting of feedstock material in said system is gas-discharge electron beam gun (2) with cold circular cathode (8) placed between two circular anodic electrodes placed coaxially to said cathode (8) which generates electron beam (9) in the shape of hollow inverted cone, and feedstock guide (17) is placed along the axis of said of said electron beam gun (2), and said gas-discharge electron beam gun (2) and said feedstock guide (17) are combined in one functional assembly.Type: ApplicationFiled: March 31, 2015Publication date: October 26, 2017Inventors: Dmytro KOVALCHUK, Ihor MELNYK, Vitalii MELNYK, Borys TUGAI
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Patent number: 8969276Abstract: An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.Type: GrantFiled: September 9, 2010Date of Patent: March 3, 2015Assignee: BASF SEInventors: Simon Braun, Julian Proelss, Ihor Melnyk, Michael Michel, Stefan Mathijssen
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Patent number: 8263176Abstract: A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: GrantFiled: March 21, 2007Date of Patent: September 11, 2012Assignee: Universität KonstanzInventors: Axel Herguth, Gunnar Schubert, Martin Käs, Giso Hahn, Ihor Melnyk
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Publication number: 20120160320Abstract: An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.Type: ApplicationFiled: September 9, 2010Publication date: June 28, 2012Applicants: GP SOLAR GmbH, BASF SEInventors: Simon Braun, Julian Proelss, Ihor Melnyk, Michael Michel, Stefan Mathijssen
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Patent number: 8182706Abstract: In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way.Type: GrantFiled: July 12, 2007Date of Patent: May 22, 2012Assignee: Universitat KonstanzInventors: Peter Fath, Ihor Melnyk, Eckard Wefringhaus
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Publication number: 20110260097Abstract: A product is obtained by mixing at least one polyethylene glycol with a base, allowing the mixture to rest in ambient air and at a temperature of approximately 25 degrees Celsius to form two phases, and separating the less dense phase representing the product. The product is used as an additive to etching solutions.Type: ApplicationFiled: November 5, 2009Publication date: October 27, 2011Applicant: GP SOLAR GMBHInventors: Ihor Melnyk, Jens Kruemberg, Michael Schmidt, Michael Michel
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Publication number: 20110162716Abstract: A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: ApplicationFiled: December 17, 2010Publication date: July 7, 2011Applicant: Universitat KonstanzInventors: Axel Herguth, Gunnar Schubert, Giso Hahn, Ihor Melnyk, Martin Käs
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Publication number: 20100243036Abstract: A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.Type: ApplicationFiled: March 21, 2007Publication date: September 30, 2010Applicant: Universitat KonstanzInventors: Axel Herguth, Gunnar Schubert, Martin Käs, Giso Hahn, Ihor Melnyk
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Publication number: 20100120248Abstract: An etching solution contains water, nitric acid, hydrofluoric acid, and sulphuric acid. More specifically it contains 15 to 40% by weight of nitric acid, 10 to 41% by weight of sulphuric acid and 0.8 to 2.0% by weight of hydrofluoric acid. The etching solution is used for etching silicon and to etching methods for silicon wafers.Type: ApplicationFiled: January 22, 2008Publication date: May 13, 2010Applicant: GP SOLAR GMBHInventors: Peter Fath, Ihor Melnyk
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Publication number: 20090246969Abstract: In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way.Type: ApplicationFiled: July 12, 2007Publication date: October 1, 2009Applicant: Universitat konstanzInventors: Peter Fath, Ihor Melnyk, Eckard Wefringhaus
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Publication number: 20090039513Abstract: A contact-making method for a semiconductor material contains the method steps of forming a diffusion barrier which promotes electrical contact and adhesion on at least one portion of a surface of a semiconductor and forming a metallization on the diffusion barrier. The diffusion barrier being formed by applying a metalliforous paste to at least one portion of the semiconductor surface or to at least one portion of a layer covering the semiconductor surface, and a semiconductor component with a diffusion barrier which is arranged in the surface of the semiconductor and which promotes electrical contact between the semiconductor material and a metallization. The metallization is applied to the diffusion barrier. The diffusion barrier is formed by a sintered metalliforous paste applied to at least one portion of the semiconductor surface.Type: ApplicationFiled: September 22, 2008Publication date: February 12, 2009Applicant: GP SOLAR GMBHInventors: Peter Fath, Ihor Melnyk
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Publication number: 20090017606Abstract: A method for producing a semiconductor component, in particular a solar cell, having regions which are doped to different extents. A layer is formed which inhibits the diffusion of a dopant and can be penetrated by a dopant, on at least one part of the surface of a semiconductor component material. The diffusion-inhibiting layer is at least partially removed in at least one high-doping region. A dopant source is formed on the diffusion-inhibiting layer and in the at least one high-doping region. Then the dopant is diffused from the dopant source into the semiconductor component material. The semiconductor component is suitable for use in integrated circuits, electronic circuits, solar cell modules, and to produce solar cells having a selective emitter structure.Type: ApplicationFiled: July 23, 2008Publication date: January 15, 2009Applicant: GP SOLAR GMBHInventors: Peter Fath, Ihor Melnyk
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Patent number: 7192885Abstract: A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.Type: GrantFiled: April 22, 2004Date of Patent: March 20, 2007Assignee: Universitat KonstanzInventors: Alexander Hauser, Ihor Melnyk, Peter Fath
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Publication number: 20060068597Abstract: In a method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution, it is provided that the etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and that the temperature of the etching solution is between 0 and 15 degrees Celsius. This results in a comparatively higher efficiency due to reduced reflection by the silicon wafers.Type: ApplicationFiled: April 22, 2004Publication date: March 30, 2006Inventors: Alexander Hauser, Ihor Melnyk, Peter Fath