Patents by Inventor Ikuo Fujiwara

Ikuo Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210132230
    Abstract: According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.
    Type: Application
    Filed: September 9, 2020
    Publication date: May 6, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo FUJIWARA, Honam KWON, Yuki NOBUSA, Keita SASAKI, Kazuhiro SUZUKI, Masaki ATSUTA
  • Patent number: 10879415
    Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: December 29, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Toshiya Yonehara, Hitoshi Yagi, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20200301129
    Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.
    Type: Application
    Filed: August 27, 2019
    Publication date: September 24, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Koichi Ishii, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20200295217
    Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
    Type: Application
    Filed: August 28, 2019
    Publication date: September 17, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masaki ATSUTA, Kazuhiro SUZUKI, Ikuo FUJIWARA, Honam KWON, Keita SASAKI, Yuki NOBUSA
  • Publication number: 20200256778
    Abstract: The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.
    Type: Application
    Filed: August 30, 2019
    Publication date: August 13, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Ikuo FUJIWARA, Kazuhiro SUZUKI, Keita SASAKI, Yuki NOBUSA, Yasushi SHINJO
  • Publication number: 20200088852
    Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.
    Type: Application
    Filed: March 7, 2019
    Publication date: March 19, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ikuo FUJIWARA, Yuki NOBUSA, Honam KWON, Keita SASAKI, Kazuhiro SUZUKI
  • Publication number: 20200091360
    Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the second region and the first region, and a plurality of structure bodies of the first conductivity type which are provided between the first region and the third region separately in a second direction crossing with a first direction from the third region toward the second region.
    Type: Application
    Filed: March 6, 2019
    Publication date: March 19, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuki NOBUSA, Ikuo FUJIWARA, Kazuhiro SUZUKI
  • Publication number: 20200025934
    Abstract: In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2·m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.
    Type: Application
    Filed: February 28, 2019
    Publication date: January 23, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Kazuhiro SUZUKI, Ikuo FUJIWARA, Keita SASAKI, Yuki NOBUSA
  • Patent number: 10401218
    Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: September 3, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo Fujiwara, Yuki Nobusa, Honam Kwon, Kazuhiro Suzuki
  • Publication number: 20190165198
    Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.
    Type: Application
    Filed: February 1, 2019
    Publication date: May 30, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Toshiya YONEHARA, Hitoshi YAGI, Ikuo FUJIWARA, Kazuhiro SUZUKI
  • Patent number: 10263128
    Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: April 16, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Ikuo Fujiwara, Keita Sasaki, Yuki Nobusa, Kazuhiro Suzuki
  • Publication number: 20190088691
    Abstract: A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.
    Type: Application
    Filed: March 6, 2018
    Publication date: March 21, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuki NOBUSA, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20190074388
    Abstract: A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.
    Type: Application
    Filed: February 26, 2018
    Publication date: March 7, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Ikuo Fujiwara, Keita Sasaki, Yuki Nobusa, Kazuhiro Suzuki
  • Publication number: 20180266881
    Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.
    Type: Application
    Filed: September 13, 2017
    Publication date: September 20, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo FUJIWARA, Yuki Nobusa, Honam Kwon, Kazuhiro Suzuki
  • Patent number: 9667893
    Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: May 30, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shunsuke Kimura, Hideyuki Funaki, Ikuo Fujiwara
  • Patent number: 9331125
    Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: May 3, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Miyazaki, Ikuo Fujiwara, Hideyuki Funaki
  • Patent number: 9177989
    Abstract: A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: November 3, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo Fujiwara, Hideyuki Funaki, Kenji Todori, Akira Fujimoto, Tsutomu Nakanishi, Kenji Nakamura
  • Publication number: 20150270314
    Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.
    Type: Application
    Filed: November 28, 2014
    Publication date: September 24, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takashi MIYAZAKI, Ikuo FUJIWARA, Hideyuki FUNAKI
  • Publication number: 20150136952
    Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 21, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shunsuke KIMURA, Hideyuki FUNAKI, Ikuo FUJIWARA
  • Publication number: 20140285671
    Abstract: An infrared imaging module according to an embodiment includes: an infrared imaging element including a semiconductor substrate having a recessed portion, and a pixel portion formed on the recessed portion, the pixel portion converting infrared rays to electrical signals; and a lid including a lens portion facing the pixel portion, and a flat plate portion surrounding the lens portion, the flat plate portion being bonded to the semiconductor substrate.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 25, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koichi ISHII, Hideyuki FUNAKI, Ikuo FUJIWARA, Hiroto HONDA