Abstract: A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer.

Abstract: A light detector according to one embodiment, includes an element region, a light concentrator, a structure part and a light-shielding part. The element region includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The light concentrator is separated from the element region in a first direction. The light concentrator is configured to concentrate light incident on the light concentrator. The structure part is arranged with the element region in a direction crossing the first direction. The structure part has a different refractive index from the element region. The light-shielding part is located between the element region and the light concentrator. The light-shielding part includes an opening. At least a portion of the light incident on the light concentrator is able to be incident on the element region by passing through the opening.

Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of insulating parts, and an intermediate part. The plurality of elements are arranged along a first direction and a second direction. The first direction and the second direction cross each other. Each of the plurality of elements includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductivity type. The second semiconductor region is located around the first semiconductor region in a first plane. The first plane is along the first and second directions. The second semiconductor region is of a second conductivity type. The plurality of insulating parts are located respectively around the plurality of elements in the first plane. The intermediate part is located around the plurality of insulating parts in the first plane. The intermediate part includes a semiconductor.

Abstract: According to one embodiment, a light detector includes a conductive layer, a first element, a second element, a first member, a first insulating part, and a second insulating part. The conductive layer includes a first conductive portion and a second conductive portion. The first element includes a first semiconductor layer and a second semiconductor layer. The second element includes a fourth semiconductor layer and a fifth semiconductor layer. The first member is provided between the first element and the second element and electrically connected to the conductive layer. The first member is conductive. The first insulating part is provided between the first element and the first member. The second insulating part is provided between the second element and the first member.

Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.

Abstract: The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.

Abstract: According to one embodiment, a light detector includes an element and a quenching resistance. The element includes a photodiode. The quenching resistance is electrically connected to the element. The quenching resistance includes a semiconductor member and a plurality of first metal members. The plurality of first metal members is electrically connected to the semiconductor member and separated from each other.

Abstract: According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.

Abstract: In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2·m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.

Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Abstract: A photodetector includes a plurality of first light detection elements having a first driving voltage range, the first light detection elements including first semiconductor layers having a first conductivity type and second semiconductor layers having a second conductivity type different from the first conductivity type; and a second light detection element having a second driving voltage range different from the first driving voltage range, the second light detection element including a third semiconductor layer having the first conductivity type and a fourth semiconductor layer having the second conductivity type.

Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.

Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the second region and the first region, and a plurality of structure bodies of the first conductivity type which are provided between the first region and the third region separately in a second direction crossing with a first direction from the third region toward the second region.

Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.

Abstract: A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.

Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.

Abstract: A photodetector includes a first semiconductor layer including a light detection region and a peripheral region on a first surface on which light is incident. The light detection region is a region in which light detecting units are arrayed. The peripheral region is a semiconductor region disposed on the periphery of the light detection region and not including a light detecting unit. A density of a lattice defect or a concentration of impurity in a first layer region that is at least a part in a thickness direction of the peripheral region is higher than a density of a lattice defect or a concentration of impurity in a second layer region adjacent to the first layer region in a direction intersecting the thickness direction in the light detection region.

Abstract: According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.

Abstract: According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.