Abstract: A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.

Abstract: A high-pressure processing apparatus for removing unnecessary matters on objects to be processed by bringing a high-pressure fluid and a chemical liquid other than the high-pressure fluid into contact with the objects to be processed in a pressurized state is provided with a plurality of high-pressure processing chambers, a common high-pressure fluid supply unit for supplying the high-pressure fluid to each one of the high-pressure processing chambers, a common chemical liquid supply unit for supplying the chemical liquid to the each high-pressure processing chambers, and a separating unit for separating gaseous components from a mixture of the high-pressure fluid and the chemical liquid discharged from the high-pressure processing chambers after the objects are processed.

Abstract: Uneconomical use of resist liquid is prevented by reducing resist liquid discharging time. Discharging time calculating means calculates a proper resist liquid discharging time, based on a first and a second rotation angular speeds of a supporting pedestal and a discharged flow quantity discharged from resist liquid discharging nozzle per unit time. When the proper resist liquid discharging time has elapsed from the start of discharging of the resist liquid by means of a pump, discharging of the resist liquid is stopped.