Patents by Inventor Il-Doo Kim

Il-Doo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100092866
    Abstract: The present invention relates to an electrode for a secondary battery, comprising a collector and a porous electrode active material layer disposed on at least one surface of the collector by spraying metal oxide nanoparticle dispersion, wherein the porous electrode active material comprises one selected from the group consisting of aggregated metal oxide nanoparticles, metal oxide nanoparticles and a mixture thereof, which is capable of undergoing stable high speed charging/discharging cycles under a high-energy-density and high-current condition.
    Type: Application
    Filed: October 13, 2009
    Publication date: April 15, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventor: Il Doo KIM
  • Publication number: 20100045997
    Abstract: An oxygen sensor using the principle of surface plasmon resonance, capable of measuring an oxygen concentration in a measurement chamber by detecting a change in resonance angle or refractive index using field enhancement effects, is provided. An oxygen transmission rate measurement system including the oxygen sensor is also provided. In this invention, only a change in voltage is measured at a fixed angle, thus achieving rapid measurement, and also, a single wavelength light source is used, thus reducing the size of the oxygen sensor and oxygen transmission rate measurement system.
    Type: Application
    Filed: August 18, 2009
    Publication date: February 25, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae Min HONG, Hee Dok CHOI, Il Doo KIM
  • Publication number: 20100033903
    Abstract: The present invention provides an electrode for a supercapacitor, a fabrication method thereof, and a supercapacitor comprising the same. The electrode exhibits enhanced specific capacitance and electrical conductivity, among others, due to the fact that it comprises a porous composite metal oxide layer which has the structure of a web of entangled nanofibers or has a nanoparticle network structure.
    Type: Application
    Filed: October 15, 2009
    Publication date: February 11, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Il Doo Kim, Doo Young Youn
  • Publication number: 20100002357
    Abstract: The present invention relates to a porous conducting metal oxide electrode prepared by depositing a porous conducting metal oxide film comprising a conducting metal oxide film layer having a network structure of nanofibers, comprising nanograins or nanoparticles, on at least one surface of a current collector, and a conducting metal oxide coating layer on the network layer of the porous conducting metal oxide through the constant current method or the cyclic voltammetric method, and a high-speed charge/discharge and ultrahigh-capacity supercapacitor using the porous conducting a metal oxide electrode.
    Type: Application
    Filed: August 11, 2008
    Publication date: January 7, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Il Doo KIM, Jae-Min HONG, Seong Mu JO, Dong Young KIM
  • Patent number: 7640789
    Abstract: A method for fabricating an ultra-sensitive metal oxide gas sensor is disclosed, which comprises the steps of spinning a mixture solution including a metal oxide precursor and a polymer onto a sensor electrode to form a metal oxide precursor-polymer composite fiber; thermally compressing or thermally pressurizing the composite fiber; and thermally treating the thermally compressed or thermally pressurized composite fiber to remove the polymer from the composite fiber. Since the gas sensor includes a macro pore between nanofibers and a meso pore between nano-rods and/or nano-grains, gas diffusion and surface area can be maximized. Also, the ultra-sensitive sensor having high stability in view of mechanical, thermal, and electrical aspects can be obtained through rapid increase of adhesion between the metal oxide thin layer and the sensor electrode.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: January 5, 2010
    Assignee: Korea Institute of Science and Technology
    Inventors: Il-Doo Kim, Jae-Min Hong, Dong-Young Kim, Seong-Mu Jo, Avner Rothschild, Harry L. Tuller
  • Patent number: 7579621
    Abstract: A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: August 25, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Harry L. Tuller
  • Patent number: 7544967
    Abstract: A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: June 9, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Harry L. Tuller
  • Patent number: 7541626
    Abstract: A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: June 2, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Harry L. Tuller
  • Publication number: 20090091665
    Abstract: A display apparatus connected to a video/audio output device includes at least two connecting portions to connect with the video/audio output device, a first storage unit to store extended display identification data (EDID) information to be provided to the video/audio output device, a second storage unit to store EDID information corresponding to the two connecting portions respectively, and a controller to change the EDID information stored in the first storage unit into one information of a currently connected connecting portion among the EDID information stored in the second storage unit when the connecting portion connected with the video/audio output device is changed.
    Type: Application
    Filed: June 17, 2008
    Publication date: April 9, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-woong KANG, Il-doo KIM
  • Publication number: 20090072780
    Abstract: The present invention provides a photovoltaic-charged secondary battery system, in which an electrode for optical power generation and an electrode for charging and discharging generated electrical energy are integrated into a single cell structure, and the potential difference between the electrodes is systematically controlled, thus maximizing the conversion efficiency of optical energy, maximizing the utilization rate of cell energy, and extending the life span of the battery. For this, the present invention provides a photovoltaic-charged secondary battery system including: a transparent electrode capable of transmitting light; a PN semiconductor layer formed on the transparent electrode and generating a current by incident light; and a secondary battery layer, formed on the PN semiconductor layer, in which the current generated by the PN semiconductor layer is charged.
    Type: Application
    Filed: December 21, 2007
    Publication date: March 19, 2009
    Inventors: Joong Kee Lee, Byung Won Cho, Kyung Yoon Chung, Hyung Sun Kim, Il Doo Kim, Chan Wook Jeon, Yong Sang Kim
  • Publication number: 20090058868
    Abstract: An image display device and method of changing extended display identification data (EDID) information includes a first storage unit which stores extended display identification data (EDID) information to be provided to the source providing device, a second storage unit which stores at least one version of the EDID information which is different from the EDID information stored in the first storage unit, and a control unit which replaces the EDID information stored in the first storage unit with the different version of the EDID information stored in the second storage unit if an EDID information change request signal is input. Accordingly, compatibility of the EDID information between the source providing device and the image display device can be maintained.
    Type: Application
    Filed: February 5, 2008
    Publication date: March 5, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-woong KANG, Il-doo Kim
  • Patent number: 7479696
    Abstract: A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: January 20, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry L. Tuller
  • Publication number: 20080274403
    Abstract: There is provided a metal oxide having a continuous nano-fiber network structure as a negative active material for a secondary battery. A method for fabricating such negative active material for a secondary battery comprises spinning a mixed solution of a metal oxide precursor and a polymer onto a collector to form composite fibers mixed with the metal oxide precursor and the polymer, thermally compressing or thermally pressurizing the composite fibers, and thermally treating the thermally compressed or thermally pressurized composite fibers to remove the polymer from the composite fiber.
    Type: Application
    Filed: April 30, 2008
    Publication date: November 6, 2008
    Inventors: Il-Doo KIM, Jae-Min HONG, Seong-Mu JO
  • Patent number: 7408187
    Abstract: A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: August 5, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Yong Woo Choi, Harry L. Tuller
  • Patent number: 7402853
    Abstract: A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: July 22, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry L. Tuller
  • Publication number: 20060234852
    Abstract: A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
    Type: Application
    Filed: March 28, 2006
    Publication date: October 19, 2006
    Inventors: Il-Doo Kim, Harry Tuller
  • Publication number: 20060231882
    Abstract: A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
    Type: Application
    Filed: March 28, 2006
    Publication date: October 19, 2006
    Inventors: Il-Doo Kim, Harry Tuller
  • Publication number: 20060108579
    Abstract: A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.
    Type: Application
    Filed: March 29, 2005
    Publication date: May 25, 2006
    Inventors: Il-Doo Kim, Yong Choi, Harry Tuller
  • Publication number: 20060082423
    Abstract: A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.
    Type: Application
    Filed: August 26, 2005
    Publication date: April 20, 2006
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry Tuller
  • Publication number: 20060076584
    Abstract: A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO3, La0.5Sr0.5CoO3 (LSCO), or LaxPb1-xCoO3 (LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.
    Type: Application
    Filed: September 7, 2005
    Publication date: April 13, 2006
    Inventors: Il-Doo Kim, Harry Tuller, Yong Choi, Akintunde Akinwande