Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about. 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: Embodiments of a display device are described. The display device includes a liquid crystal display (LCD) module and a backlight unit designed to emit a primary light in a first wavelength region of an electromagnetic (EM) spectrum. The LCD module includes an array of pixels having at least one pixel with a sub-pixel that includes a layer of luminescent nanostructures and a layer of fluorescent material. The layer of luminescent nanostructures absorbs the primary light and emits a second light in a second wavelength region of the EM spectrum different from the first wavelength region. The layer of fluorescent material absorbs the primary light that has passed through the layer of luminescent nanostructures, and emits a third light in the second wavelength region of the EM spectrum.

Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.

Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Abstract: The present invention is directed to methods of preparing metal sulfide, metal selenide, or metal sulfide/selenide nanoparticles and the products derived therefrom. In various embodiments, the nanoparticles are derived from the reaction between precursor metal salts and certain sulfur- and/or selenium-containing precursors each independently having a structure of Formula (I), (II), or (III), or an isomer, salt, or tautomer thereof, where Q1, Q2, Q3, R1, R2, R3, R5, and X are defined within the specification.

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and at least two thin shell layers. The nanostructures may have additional shell layers. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

Abstract: Embodiments of a display device are described. The display device includes a liquid crystal display (LCD) module and a backlight unit designed to emit a primary light in a first wavelength region of an electromagnetic (EM) spectrum. The LCD module includes an array of pixels having at least one pixel with a sub-pixel that includes a layer of luminescent nanostructures and a layer of fluorescent material. The layer of luminescent nanostructures absorbs the primary light and emits a second light in a second wavelength region of the EM spectrum different from the first wavelength region. The layer of fluorescent material absorbs the primary light that has passed through the layer of luminescent nanostructures, and emits a third light in the second wavelength region of the EM spectrum.

Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and a thin inner shell layer. The nanostructures may have an additional outer shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.