Abstract: A gas sensor includes a plurality of sensing resistors that vary in resistance based on ambient temperature and the presence of certain gases, such as CO2 and H2O. The responses of each of the sensing resistors vary based on a base temperature of each of the sensing resistors. The base temperatures for each of the sensing resistors and configurations of the sensing resistors are selected to emphasize a response to a gas of interest (e.g., CO2) while de-emphasizing or canceling contributions from ambient temperature and gases that are not of interest (e.g., H2O).

Abstract: A hearable comprises a wearable structure including a speaker, a sensor, and a temperature compensating circuit which measures temperature in an environment of the sensor. A portion of the wearable structure, which includes the sensor and temperature compensating circuit, is disposed within a user’s ear when in use. A sensor processing unit which is communicatively coupled with the temperature compensating circuit: acquires temperature data from the temperature compensating circuit while the portion of the wearable structure is disposed within the ear of the user; builds a baseline model of normal temperature for the user; and compares a temperature measurement acquired from the temperature compensating circuit to the baseline model. In response to the comparison showing a deviation beyond a preset threshold from the baseline model, the sensor processing unit generates a health indicator for the user which is used to monitor an aspect of health of the user.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: A medical device comprises a surface, an ultrasonic sensor, and a processor. The surface is configured to interact with skin of a patient during operation of the medical device. The ultrasonic sensor is disposed beneath the surface and configured to ultrasonically measure data with respect to a region above the surface. The processor is coupled with the ultrasonic sensor. Responsive to detection of a finger in contact with the surface, the processor is configured to operate the ultrasonic sensor to capture a fingerprint of the finger. Responsive to authentication that a person associated with the captured fingerprint is authorized to use the medical device, the processor is configured to activate operation of the medical device.

Abstract: The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.

Abstract: A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.

Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

Abstract: A medical device comprises a surface, an ultrasonic sensor, and a processor. The surface is configured to interact with skin of a patient during operation of the medical device. The ultrasonic sensor is disposed beneath the surface and configured to ultrasonically measure data with respect to a region above the surface. The processor is coupled with the ultrasonic sensor. Responsive to detection of a finger in contact with the surface, the processor is configured to operate the ultrasonic sensor to capture a fingerprint of the finger. Responsive to authentication that a person associated with the captured fingerprint is authorized to use the medical device, the processor is configured to activate operation of the medical device.

Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

Abstract: The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

Abstract: The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.

Abstract: A system and/or method for utilizing mechanical motion limiters to control proof mass amplitude in MEMS devices (e.g., MEMS devices having resonant MEMS structures, for example various implementations of gyroscopes, magnetometers, accelerometers, etc.). As a non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished during normal (e.g., steady state) gyroscope operation utilizing impact stops (e.g., bump stops) of various designs. As another non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished utilizing non-impact limiters (e.g., springs) of various designs, for example springs exhibiting non-linear stiffness characteristics through at least a portion of their normal range of operation.

Abstract: In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.