Abstract: A resistive memory device includes: a first electrode; a variable resistive material layer that is formed on the first electrode and includes a metal oxide NxMOy (wherein 0.001<x<0.30 and 0.5<y<2.5) doped with nitrogen; and a second electrode that is formed on the variable resistive material layer. The variable resistive material layer has a multibit memory characteristic.

Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract: A resistive memory device includes a switching device disposed on a lower interconnection, a resistor element disposed on the switching device, and an upper interconnection disposed on the resistor element. The switching device includes a diode electrode, a high-concentration lower anode disposed on the diode electrode, a middle-concentration lower anode disposed on the lower high-concentration anode electrode, a common cathode disposed on the middle-concentration lower anode, a low-concentration upper anode disposed on the common cathode, and an high-concentration upper anode disposed on the low-concentration upper anode. The peak dopant concentration of the middle-concentration lower anode is at least 10 times greater than the peak dopant concentration of the low-concentration upper anode.

Abstract: A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion—to provide high roughness and firm connection.

Abstract: A resistive memory device includes a switching device disposed on a lower interconnection, a resistor element disposed on the switching device, and an upper interconnection disposed on the resistor element. The switching device includes a diode electrode, a high-concentration lower anode disposed on the diode electrode, a middle-concentration lower anode disposed on the lower high-concentration anode electrode, a common cathode disposed on the middle-concentration lower anode, a low-concentration upper anode disposed on the common cathode, and an high-concentration upper anode disposed on the low-concentration upper anode. The peak dopant concentration of the middle-concentration lower anode is at least 10 times greater than the peak dopant concentration of the low-concentration upper anode.

Abstract: A pad structure usable with a semiconductor device may include an insulating layer pattern structure, a plug, and a pad. The insulating layer pattern structure has a plug hole and at least one via hole. The plug is formed in the plug hole. The pad is formed on the insulating layer pattern structure. The pad is electrically connected with the plug and has a lower surface and an uneven upper surface. The lower surface includes a protruded portion inserted into the via hole. The uneven upper surface includes a recessed portion and an elevated portion- to provide high roughness and firm connection.

Abstract: A semiconductor memory device includes pillars extending upright on a substrate in a direction perpendicular to the substrate, a stack disposed on the substrate and constituted by a first interlayer insulating layer, a first conductive layer, a second interlayer insulating layer, and a second conductive layer, a variable resistance layer interposed between the pillars and the first conductive layer, and an insulating layer interposed between the first pillars and the second conductive layer.

Abstract: Provided is a method of fabricating a memory device.

Abstract: A nonvolatile memory device includes a bottom electrode on a semiconductor substrate, a data storage layer on the bottom electrode, the data storage layer including a transition metal oxide, and a switching layer provided on a top surface and/or a bottom surface of the data storage layer, wherein a bond energy of material included in the switching layer and oxygen is more than a bond energy of a transition metal in the transition metal oxide and oxygen.

Abstract: A method of fabricating a memory device includes defining a cell region on a substrate and defining a dummy region around the cell region, forming bit lines on a top surface of the substrate, the bit lines extending in one direction, forming cell vertical structures on top surfaces of the bit lines corresponding to the cell region, each cell vertical structure including a cell diode and a variable resistive element, forming dummy vertical structures on top surfaces of the bit lines corresponding to the dummy region, each dummy vertical structure including a dummy diode and a variable resistive element, and forming word lines in contact with top surfaces of the cell vertical structures and dummy vertical structures, the word lines intersecting the bit lines at right angles.

Abstract: In a reactor for solid ammonium salt, a method of controlling the reactor, and a NOx emission purification system using solid ammonium salt and selective catalytic reduction, the reactor includes a first chamber and a second chamber. The first chamber has an exhaust and a first heating element. Solid ammonium salt is in the first chamber. The second chamber has a second heating element and is formed at a side of the first chamber. The first chamber is connected with the second chamber. Solid ammonium salt is in the second chamber. An amount of the solid ammonium salt in the second chamber is more than that in the first chamber, so that the first chamber is heated and cooled faster than the second chamber.

Abstract: A DLNA device for sharing multiple home media content comprises a display unit, an input unit, a communicator, a controller and a data storage unit. The display unit is configured to display a user interface for implementing at least one individual DLNA service scenario. The input unit is configured to receive a DLNA service scenario selection information including server selection information, content selection information and player selection information through the user interface. The communicator configured to communicate with a DLNA network. The controller is configured to perform the at least one individual DLNA service scenario based on the DLNA service scenario selection information received through the input unit. The data storage unit configured to store scenario selection information, uniform resource identifier (URI) information of a content and playback state information corresponding to each individual DLNA service scenario.

Abstract: The present invention relates to a method for manufacturing a low density inorganic powder insulator having a low density molded structure using expanded perlite without a binder and a mold machine for manufacturing the same, and more particularly, to a technology of uniformly dispersing perlite particles having a shape of irregular fragments of glass using expanded perlite to form a framework among synthetic silica to improve molding strength even at a low density, thereby reducing thermal conductivity (conduction and convection blocking) due to a low density and an increase in a specific surface area.

Abstract: Provided is a method of fabricating a memory device.

Abstract: A DLNA device for performing a DLNA service scenario, comprises a display unit, an input unit, a communicator and a controller. The display unit is configured to display a user interface for performing the DLNA service scenario. The input unit is configured to receive, from a user, an operational instruction for the user interface. The communicator is configured to communicate with a DLNA network. The controller is configured to control the user interface displayed on the display unit and control the communicator. The user interface is configured to include a main layer providing an interface for media content selection, a first sublayer providing an interface for media server selection, and a second sublayer providing an interface for media player selection. The first sublayer and the second sublayer are displayed temporarily on at least a portion of the main layer according to the operational instruction.

Abstract: A short message processing method and apparatus, which analyzes a short message received from a mobile communication network and provides via a packet data service node (PDSN) a supplementary service such as a credit card settlement details notifying service, a contact point registration service, a spam filtering service, a schedule registration service, a message history management service, and so forth, based on the result of the analysis. The short message processing method and apparatus can execute a supplementary service corresponding to the short message received through a PDSN, in corporation with a platform such as WIPI or BREW.

Abstract: The present invention relates to a thermal insulator using closed cell expanded perlite. The thermal insulator using closed cell expanded perlite of the present invention includes: expanded perlite 10 to 84 wt %ç, including dried and expanded perlite ore particles, having a surface with a closed cell shape, as an active ingredient; a liquid binder 15 to 85 wt %; and a reinforcing fiber 0.25 to 5 wt %. Accordingly, the present invention provides a thermal insulator, which enhances the rigidity of expanded perlite, minimizes porosity and gaps between the expanded perlite particles, by reducing compression ratio during compression molding, which results in lower density, improves constructability by lowering thermal conductivity, reduces material and energy costs and can reduce the area required for equipment installation by reducing the thickness of the thermal insulator.

Abstract: A semiconductor memory device includes pillars extending upright on a substrate in a direction perpendicular to the substrate, a stack disposed on the substrate and constituted by a first interlayer insulating layer, a first conductive layer, a second interlayer insulating layer, and a second conductive layer, a variable resistance layer interposed between the pillars and the first conductive layer, and an insulating layer interposed between the first pillars and the second conductive layer.