Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

Abstract: An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Abstract: An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.

Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

Abstract: Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

Abstract: An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

Abstract: Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: A silicon based optical modulator apparatus can include a lateral slab on an optical waveguide, the lateral slab protruding beyond side walls of the optical waveguide so that a portion of the optical waveguide protrudes from the lateral slab towards a substrate.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: An optical serializer/deserializer (SERDES) includes serializing circuitry which includes a source of a plurality of unmodulated optical signals, a modulation unit for generating a plurality of modulated optical signals using a plurality of electrical signals to modulate the plurality of unmodulated optical signals, and a coupling unit for delaying the plurality of modulated optical signs to generate a plurality of delayed modulated optical signals and combines the delayed modulated optical signals to generate a serialized modulated optical signal.

Abstract: Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

Abstract: An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Abstract: Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

Abstract: A memory module may include at least one memory package including an optical signal input/output (I/O) unit and a first optical beam path and a printed circuit board (PCB) on which the memory package is mounted. The PCB may have a second optical beam path configured to transmit an optical signal to the optical signal I/O unit. The memory module may further include a connecting body configured to mount the memory package on the PCB and match a refractive index of the first optical beam path with a refractive index of the second optical beam path.

Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Abstract: Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.