Abstract: The invention relates to a light-emitting component, comprising: at least one conversion element comprising: at least one first material selected from the group consisting of polyazene, rubrene and derivatives thereof; at least one second material, the second material being a quantum dot, and at least one light source, the at least one light source emitting at least one photon in the range of 3.5 eV to 2.5 eV, preferably in the range of 3.0 eV to 2.55 eV. The invention further relates to the use of a light-emitting component according to the invention.

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1?x*?y*?z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: A luminophore having the empirical formula A3M*OxF9?2x:Mn4+ where A may be or include Li, Na, Rb, K, Cs, or combinations thereof. M* may be or include Cr, Mo, W, or combinations thereof. x may be or include 0<x<4.5.

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Abstract: The invention relates to a luminescent material having the formula (MB) (TA) 3?2x (TC) 1+2xO4?4xN4x:E, wherein: —TA is selected from a group of monovalent metals, including Li, Na, Cu, Ag and combinations thereof; —MB is selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn and combinations thereof; —TC is selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals and combinations thereof; —E is selected from a group including Eu, Mn, Ce, Yb and combinations thereof, and wherein 0<x<0.875. A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1-x*-y*-z*)Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

Abstract: The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).

Abstract: A light-emitting device includes a light-emitting semiconductor component that emits first light in a first wavelength range during operation A wavelength conversion element converts the first light at least partly into second light in a second wavelength range is arranged in the beam path of the first light. The second wavelength range differs from the first wavelength range. The wavelength conversion element includes nanoparticles containing organic luminescent molecules in a basic material formed from an SiO2-based material. A method for producing a light-emitting device is furthermore specified.

Abstract: A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the surface of the matrix material. The nanoparticles are suitable for converting electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range. A method for producing such a converter material and an optoelectronic component that includes such a converter material are furthermore specified.

Abstract: A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

Abstract: The invention relates to an arrangement for generating mixed light, which comprises three semiconductor chips, emitting in the blue spectral range, of three devices. Arranged in the light paths of the individual semiconductor chips are different conversion elements which are configured to convert primary radiation into secondary radiation. The total radiation (S1, S2, S3) exiting the respective devices (10, 20, 30) has a corresponding chromaticity coordinate on the black body curve of the CIE color diagram 1931 or lies within a color quadrilateral of the CIE color diagram.

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a laser process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.