Patents by Inventor Iori Yoshida
Iori Yoshida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240076547Abstract: It is known that when etching gold films using etching solutions containing iodine and iodide, N-methyl-2-pyrrolidinone (NP) is added to improve the etching solution's wettability, microfabrication property, and solution life. However, in recent years, the use of NMP has been regulated due to its adverse effects on human health. The present invention provides an etching solution and etching method for gold film that improves wettability, microfabrication property, and solution life without containing NP. In order to address the problem of the prior art, the present invention provides etching solutions and etching methods for gold films that improve wettability, microfabrication property, and liquid life without NMP, characterized by the inclusion of a specific organic solvent in the etching solution containing iodine and iodide.Type: ApplicationFiled: January 19, 2022Publication date: March 7, 2024Applicant: KANTO KAGAKU KABUSHIKI KAISHAInventors: Itsuki KASHIWAGI, Yuki YOSHIDA, Koichi INOUE, Iori KAWASHIMA
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Patent number: 10138397Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.Type: GrantFiled: June 15, 2017Date of Patent: November 27, 2018Assignee: AGC Inc.Inventors: Iori Yoshida, Satoshi Takemiya, Hiroyuki Tomonaga
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Patent number: 10040972Abstract: A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.Type: GrantFiled: July 28, 2017Date of Patent: August 7, 2018Assignee: ASAHI GLASS COMPANY, LIMITEDInventors: Iori Yoshida, Satoshi Takemiya, Hiroyuki Tomonaga
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Publication number: 20170342298Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.Type: ApplicationFiled: July 28, 2017Publication date: November 30, 2017Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori Yoshida, Satoshi Takemiya, Hiroyuki Tomonaga
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Publication number: 20170283987Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.Type: ApplicationFiled: June 15, 2017Publication date: October 5, 2017Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Patent number: 9481812Abstract: A polishing agent includes a particle of a metal oxide, a water-soluble polyamide, an organic acid and water. The water-soluble polyamide has a tertiary amino group and/or an oxyalkylene chain in a molecule thereof. The polishing agent has a pH of 7 or less.Type: GrantFiled: July 24, 2015Date of Patent: November 1, 2016Assignee: ASAHI GLASS COMPANY, LIMITEDInventors: Iori Yoshida, Nobuyuki Takagi, Masaru Suzuki, Toshihiko Otsuki
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Patent number: 9328261Abstract: A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I?) between a value I of an absorbance of 3566 cm?1 and a value I? of an absorbance of 3695 cm?1, and a crystallite diameter XS, is 0.08 or less. A=(I/I?)/XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a?) and a lattice constant (a) measured by powder X-ray diffraction, is ?0.16% or more.Type: GrantFiled: December 11, 2014Date of Patent: May 3, 2016Assignee: ASAHI GLASS COMPANY, LIMITEDInventors: Yuiko Yoshida, Iori Yoshida, Junko Anzai
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Publication number: 20160024351Abstract: A polishing agent includes a particle of a metal oxide, a water-soluble polyamide, an organic acid and water. The water-soluble polyamide has a tertiary amino group and/or an oxyalkylene chain in a molecule thereof. The polishing agent has a pH of 7 or less.Type: ApplicationFiled: July 24, 2015Publication date: January 28, 2016Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Nobuyuki TAKAGI, Masaru SUZUKI, Toshihiko OTSUKl
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Patent number: 9129901Abstract: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.Type: GrantFiled: October 28, 2013Date of Patent: September 8, 2015Assignee: ASAHI GLASS COMPANY, LIMITEDInventors: Iori Yoshida, Satoshi Takemiya, Hiroyuki Tomonaga
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Patent number: 9085714Abstract: A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.Type: GrantFiled: December 3, 2013Date of Patent: July 21, 2015Assignee: ASAHI GLASS COMPANY, LIMITEDInventors: Iori Yoshida, Satoshi Takemiya, Hiroyuki Tomonaga
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Publication number: 20150175848Abstract: A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I?) between a value I of an absorbance of 3566 cm?1 and a value I? of an absorbance of 3695 cm?1, and a crystallite diameter XS, is 0.08 or less. A=(I/I?)/XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a?) and a lattice constant (a) measured by powder X-ray diffraction, is ?0.16% or more.Type: ApplicationFiled: December 11, 2014Publication date: June 25, 2015Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Yuiko YOSHIDA, Iori Yoshida, Junko Anzai
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Publication number: 20150159047Abstract: A polishing composition contains cerium oxide particles, at least one selected from a methonium compound and an alkanolamine compound which is a primary or secondary alkanolamine compound, and a cyclic oligosaccharide of 0.005 mass % or more to less than 0.1 mass % and/or a nonionic surfactant of 0.0007 mass % or more to 1.7 mass % or less which has an acetylenic group and to which an ethylene oxide is added, wherein a pH is 3.5 or more to less than 6. A polishing method includes bringing a surface to be polished of an object into contact with a polishing pad while a polishing composition according to claim 1 is supplied to the polishing pad, and polishing by a relative movement between the surface of the object and the polishing pad.Type: ApplicationFiled: October 24, 2014Publication date: June 11, 2015Applicant: Asahi Glass Company, LimitedInventor: Iori YOSHIDA
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Publication number: 20150159048Abstract: A polishing composition contains cerium oxide particles of 50 nm or more to 160 nm or less in average secondary particle diameter and at least one kind of nitride film polishing accelerating agent selected from a group consisting of a methonium compound and a primary or secondary alkanolamine compound, wherein a concentration of the methonium compound is 1.0 mass % or less, and a pH is 3.5 or more to less than 6. A polishing method includes bringing a surface to be polished of an object into contact with a polishing pad while a polishing composition according to claim 1 is supplied to the polishing pad, and polishing by a relative movement between the surface of the object and the polishing pad.Type: ApplicationFiled: October 24, 2014Publication date: June 11, 2015Applicant: Asahi Glass Company, LimitedInventor: Iori YOSHIDA
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Publication number: 20140248775Abstract: The present invention provides a detergent for effectively cleaning, by a safe and simple method, a manganese component remaining on and adhered to a substrate surface, after polishing a silicon carbide single crystal substrate with a manganese compound-containing polishing agent. The present invention relates to a detergent for cleaning a silicon carbide single crystal substrate polished with a manganese compound-containing polishing agent, the detergent including at least one of ascorbic acid and erythorbic acid, in which the detergent has a pH of 6 or less.Type: ApplicationFiled: May 8, 2014Publication date: September 4, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Katsuaki MIYATANI
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Publication number: 20140220299Abstract: The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.Type: ApplicationFiled: April 7, 2014Publication date: August 7, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi Takemiya, Hiroyuki Tomonaga
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Publication number: 20140187043Abstract: A non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate is polished at a high polishing rate, whereby a smooth surface is obtained. There is provided a polishing agent containing: an oxidant that contains a transition metal and has a redox potential of 0.5 V or more; silica particles that have an average secondary particle size of 0.2 ?m or less; and a dispersion medium, wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %.Type: ApplicationFiled: March 5, 2014Publication date: July 3, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Publication number: 20140094032Abstract: A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.Type: ApplicationFiled: December 3, 2013Publication date: April 3, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Publication number: 20140057438Abstract: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.Type: ApplicationFiled: October 28, 2013Publication date: February 27, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi Takemiya, Hiroyuki Tomonaga
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Patent number: 8304346Abstract: The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle sizeĆthe content) is in a range of from 10 to 40; and tetramethylammonium ion.Type: GrantFiled: May 5, 2011Date of Patent: November 6, 2012Assignee: Asahi Glass Company, LimitedInventors: Iori Yoshida, Hiroyuki Kamiya
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Patent number: 8030213Abstract: To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.Type: GrantFiled: September 17, 2007Date of Patent: October 4, 2011Assignees: Asahi Glass Company, Limited, AGC Seimi Chemical Co., Ltd.Inventors: Iori Yoshida, Yoshinori Kon