Patents by Inventor Isaho Kamata
Isaho Kamata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9879359Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.Type: GrantFiled: June 19, 2014Date of Patent: January 30, 2018Assignees: DENSO CORPORATION, CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, NuFlare Technology, Inc., TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Hiroaki Fujibayashi, Masami Naito, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideki Ito, Ayumu Adachi, Koichi Nishikawa
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Patent number: 9873941Abstract: It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.Type: GrantFiled: July 29, 2015Date of Patent: January 23, 2018Assignees: NuFlare Technology, Inc., Toyota Jidosha Kabushiki KaishaInventors: Hideki Ito, Toshiro Tsumori, Kunihiko Suzuki, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
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Publication number: 20170345658Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.Type: ApplicationFiled: December 8, 2015Publication date: November 30, 2017Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power IndustryInventors: Keisuke FUKADA, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Masami NAITO, Kazukuni HARA, Takahiro KOZAWA, Hirofumi AOKI
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Patent number: 9598792Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.Type: GrantFiled: June 19, 2012Date of Patent: March 21, 2017Assignees: NuFlare Technology, Inc., Central Research Institute of Electric Power Industry, Denso Corporation, Toyota Jidosha Kabushiki KaishaInventors: Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
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Patent number: 9570337Abstract: At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in an inert gas atmosphere.Type: GrantFiled: March 19, 2014Date of Patent: February 14, 2017Assignees: NuFlare Technology, Inc., Denso CorporationInventors: Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
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Patent number: 9518322Abstract: A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.Type: GrantFiled: August 29, 2014Date of Patent: December 13, 2016Assignee: NuFlare Technology, Inc.Inventors: Hideki Ito, Kunihiko Suzuki, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Hiroaki Fujibayashi, Masami Naito, Ayumu Adachi, Koichi Nishikawa
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Publication number: 20160138190Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.Type: ApplicationFiled: June 19, 2014Publication date: May 19, 2016Inventors: Hiroaki FUJIBAYASHI, Masami NAITO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Hideki ITO, Ayumu ADACHI, Koichi NISHIKAWA
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Patent number: 9273412Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.Type: GrantFiled: June 19, 2012Date of Patent: March 1, 2016Assignees: NuFlare Technology, Inc., Central Research Institute of Electric Power Industry, Denso Corporation, Toyota Jidosha Kabushiki KaishaInventors: Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
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Publication number: 20160024652Abstract: A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.Type: ApplicationFiled: July 10, 2015Publication date: January 28, 2016Inventors: Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Katsumi Suzuki, Koichi Nishikawa
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Publication number: 20150376813Abstract: When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA? parallel to the first direction [11-20] toward second directions [?1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ?40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [?1-120] opposite to the first direction [11-20] and the second directions [?1100], [1-100], to discharge defects.Type: ApplicationFiled: January 31, 2014Publication date: December 31, 2015Applicant: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRYInventors: Hidekazu TSUCHIDA, Isaho KAMATA, Norihiro HOSHINO
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Publication number: 20150329967Abstract: It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.Type: ApplicationFiled: July 29, 2015Publication date: November 19, 2015Inventors: Hideki ITO, Toshiro TSUMORI, Kunihiko SUZUKI, Hidekazu TSUCHIDA, Isaho KAMATA, Masahiko ITO, Masami NAITO, Hiroaki FUJIBAYASHI, Ayumu ADACHI, Koichi NISHIKAWA
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Publication number: 20150299898Abstract: A susceptor processing method according to an embodiment includes: placing a plate on a susceptor arranged in a film forming chamber; heating the susceptor in order to have a temperature higher than that of the plate by using a main heater arranged below the susceptor and an auxiliary heater arranged in an upper part of the film forming chamber, and subliming a SIC film having been formed on a surface of the susceptor and adhering the sublimed SIC on the plate; and transporting the plate from the film forming chamber, the plate having SIC adhered thereon.Type: ApplicationFiled: April 2, 2015Publication date: October 22, 2015Inventors: Hideki ITO, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Hiroaki Fujibayashi, Katsumi Suzuki, Koichi Nishikawa
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Publication number: 20150090693Abstract: A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.Type: ApplicationFiled: August 29, 2014Publication date: April 2, 2015Inventors: Hideki ITO, Kunihiko SUZUKI, Hidekazu TSUCHIDA, Isaho KAMATA, Masahiko ITO, Hiroaki FUJIBAYASHI, Masami NAITO, Ayumu ADACHI, Koichi NISHIKAWA
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Publication number: 20140287539Abstract: At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in an inert gas atmosphere.Type: ApplicationFiled: March 19, 2014Publication date: September 25, 2014Inventors: Hideki ITO, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
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Patent number: 8815711Abstract: A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.Type: GrantFiled: June 14, 2011Date of Patent: August 26, 2014Assignees: NuFlare Technology, Inc., Denso Corporation, Toyota Jidosha Kabushiki KaishaInventors: Kunihiko Suzuki, Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito
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Patent number: 8716718Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.Type: GrantFiled: September 14, 2012Date of Patent: May 6, 2014Assignees: Showa Denko K.K., National Institute of Advanced Industrial Science and Technology, Central Research Institute of Electric Power IndustryInventors: Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata
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Publication number: 20130247816Abstract: A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.Type: ApplicationFiled: March 15, 2013Publication date: September 26, 2013Applicants: Denso Corporation, NuFlare Technology, Inc.Inventors: Kunihiko SUZUKI, Yuusuke Sato, Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito
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Patent number: 8455269Abstract: In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.Type: GrantFiled: August 4, 2006Date of Patent: June 4, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii
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Patent number: 8367510Abstract: In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.Type: GrantFiled: September 1, 2006Date of Patent: February 5, 2013Assignee: Central Research Institute of Electric Power IndustryInventors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii
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Publication number: 20130009170Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicants: SHOWA DENKO K.K., CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, NATIONAL INSTITUTE OF ADVANCE INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kenji MOMOSE, Michiya ODAWARA, Keiichi MATSUZAWA, Hajime OKUMURA, Kazutoshi KOJIMA, Yuuki ISHIDA, Hidekazu TSUCHIDA, Isaho KAMATA