Abstract: Through use of a line pattern which becomes a pattern under measurement and a zone pattern in a zonal shape which becomes a flare causing pattern forming a light transmission region which surrounds the line pattern and causes local flare to occur on the line pattern, the effect of the local flare due to the zone pattern on the line pattern is measured as a line width of the line pattern for evaluation. Further, this measurement value is used to compensate the effect of the local flare on each real pattern.

Abstract: Through use of a line pattern which becomes a pattern under measurement and a zone pattern in a zonal shape which becomes a flare causing pattern forming a light transmission region which surrounds the line pattern and causes local flare to occur on the line pattern, the effect of the local flare due to the zone pattern on the line pattern is measured as a line width of the line pattern for evaluation. Further, this measurement value is used to compensate the effect of the local flare on each real pattern.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: Chemically amplified resist material which comprises: I. an acid-sensitive terpolymer produced upon copolymerization of (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group, (ii) a second monomer unit having a lactone structure, and (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit; and II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation, and the process for forming resist patterns using this resist material.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: An optical exposure mask for patterning an optical beam comprises an etching stop layer of a material that is substantially transparent with respect to the optical beam, a transparent pattern provided on one of upper and lower major surfaces of the etching stop layer, and an opaque pattern provided on one of the upper and lower major surfaces of the etching stop layer for patterning the optical beam, wherein the material for the etching stop layer is selected from a group essentially consisted of Al.sub.2 O.sub.3, MgO and a mixture thereof, and the etching stop layer has an etching rate that is substantially smaller than the etching rate of a material forming the transparent pattern for any of dry and wet etching processes.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: A phase shift optical mask is adapted to receive exposure light and is provided with a transparent substrate, a phase shifter shifting a phase of the exposure light with respect to the phase of the exposure light transmitted through the transparent substrate, and a transparent layer interposed between the transparent substrate and the phase shifter. The transparent layer shifts the phase of the exposure light by 90.degree.+180.degree..multidot.n and n is an integer.

Abstract: A silicon-on-insulator (SOI) structure having a single crystal layer of a group III-V compound semiconductor material contacting a single crystal substrate of sapphire such that a principal surface of the single crystal layer establishes an intimate contact with a corresponding principal surface of the single crystal substrate and the single crystal layer, and the single crystal substrate are bonded with each other while elevating a temperature.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: An optical mask including a 2.pi.n phase shifter pattern, a .pi.(2n+1) phase shifter pattern, an intermediate phase shifter pattern which shifts the phase of an incident light by an angle between 2.pi.n and .pi.(2n+1), and a reversed intermediate phase shifter pattern which shifts the phase of an incident light by an angle being reversed by .pi. for the phase shift angle of the intermediate phase shifter pattern. The intermediate phase shifter patterns are formed in the vicinity of the reversed intermediate phase shifter patterns having light shielding films in between.

Abstract: A projection exposure method includes the steps of (a) irradiating a light from a light source on an optical mask, where the optical mask includes a main space which transmits light and has a desired exposure pattern, and a subspace which transmits light and is provided adjacent to the main space, and (b) exposing a photoresist layer by the light which is transmitted through the optical mask via a lens so as to project an optical image of the main space, where the subspace has a narrow width such that the light transmitted through the subspace by itself does not expose the photosensitive layer.

Abstract: A method for fabricating an SOI structure which includes the steps of contacting a single crystal layer of a group III-V compound semiconductor material to a single crystal substrate of sapphire such that a principal surface of said single crystal layer establishes an intimate contact with a corresponding principal surface of said single crystal substrate and bonding the single crystal layer and the single crystal substrate with each other while elevating a temperature.

Abstract: A photomask comprises light shielding areas with a light shielding layer formed on a mask substrate, and a light transmitting area defined on the mask substrate by the light shielding areas, the light transmitting area being divided in a first area with a 90.degree. phase shifter formed thereon for shifting phase of transmitted light by 90.degree., a second area with a 270.degree. phase shifter formed thereon for shifting phase of transmitted light by 270.degree., and a third area with neither the 90.degree. phase shifter nor the 270.degree. phase shifter formed thereon, the first and the second areas being arranged without being overlapped on each other and with the light shielding areas or the third area located therebetween.