Abstract: A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

Abstract: A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET being used as a drain terminal of the circuit. First and second resistors are connected in series between the source terminal and the drain terminal, and a biasing voltage supply is connected between the juncture of both the resistors and the gate of the second MOSFET. By virtue of these connections the "on" resistance of the high-voltage circuit is improved due to the effect of the biasing voltage effect in bringing the second MOSFET into an "on" condition.

Abstract: A thermoplastic resin composition excellent in coating property which comprises (A) at least one of polyamide resins and polyacetal resins, (B) at least one of aromatic monovinyl compound/vinyl cyanide copolymers comprising units of aromatic monovinyl compounds and units of vinyl cyanides in a weight ratio of 60:40 to 80:20 and having an intrinsic viscosity of 0.3 to 1.1 and (C) at least one of conjugated diene rubber/vinyl cyanide graft copolymers comprising units of conjugated diene rubbers in an amount of 5 to 45% by weight based on the weight of the graft copolymers in a weight proportion of the components (A), (B) and (C) being 0.1-10: 5-90: 5-94.9.

Abstract: Speed control apparatus for DC motor comprising a current mirror circuit including a first transistor 11 and second transistors 12-14 with their bases connected in common, the collectors of the second transistors 12-14 being in-common connected to one end of the DC motor 9 so as to control the motor current, the bases of the transistors being fed with such base current that saturates the transistors, thereby to raise their maximum controlling torque and starting torque of the DC motor.

Abstract: A thermoplastic resin composition having a good heat cycle property which comprises (A) a graft polymer comprising a conjugated diene rubber and an aromatic vinyl compound and a vinylic cyanide grafted thereon in a weight proportion of 5-80:15-140, the weight ratio of the aromatic vinyl compound and the vinylic cyanide being 10-90:5-50, (B) a copolymer comprising an aromatic vinyl compound and a vinylic cyanide in a weight ratio of 40:60 to 90:10 and (C) an organo-silicon compound, the weight proportion of the graft polymer (A) and the copolymer (B) being from 5:95 to 95:5 and the amount of the organo-silicon compound (C) being from 0.05 to 3.0 parts by weight to 100 parts by weight of the combined amount of graft polymer (A) and the copolymer (B).

Abstract: An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.

Abstract: A speed control system for a d-c electric motor comprising a three-terminal space control IC to provide a constant voltage source having a negative internal resistance equal in absolute value to the internal resistance of the motor and thereby render the motor rotatable at a constant controlled speed. A resistance element having a positive temperature coefficient is used as an external circuit element for the IC so that rotation speed variations relative to load torque variations will be substantially constant despite variations in the ambient temperature.

Abstract: A method for preparation of a plated product which comprises electroplating a molded product of a resin composition comprising at least one kind of thermoplastic resin and carbon black having an oil absorption amount of not less than 200 ml/100 g and a surface area of not less than 500 m.sup.2 /g in a weight proportion of 100:3-100 and having an intrinsic volume resistivity of not more than 10.sup.3 .OMEGA..cm without previous electroless plating.

Abstract: In an insulated gate field effect transistor having a source region and a drain region of the P-conductivity type which are disposed in surface portions of a semiconductor substrate of the N-conductivity type in a manner to be spaced apart from each other, a gate electrode being disposed through an insulating film on the substrate between the source region and the drain region, an insulated gate field effect transistor wherein said drain region is disposed apart from said gate electrode, two regions of an intermediate region and a high resistance region which are of the P-conductivity type and which successively extend from said drain region towards the side of said gate electrode are disposed in surface portions of the substrate situated between said drain region and said gate electrode, said intermediate region having an impurity concentration lower than that of said drain region, said high resistance region having an impurity concentration lower than that of said intermediate region, and a source electrode

Abstract: A protective circuit comprises a metal-oxide-semiconductor field effect transistor (MOSFET) to be protected, and a depletion-type MOSFET the gate and source of which are connected to each other and the souce of which is connected to the gate of the MOSFET to be protected, whereby the protective circuit which is suitable for a high-speed operation is completed.

Abstract: An insulated gate field effect transistor formed on one main surface of a semiconductor substrate comprises a drain region the impurity concentration of which is lower than twice that of the semiconductor substrate and the conductivity type is reverse to that of the substrate and a region of a high impurity concentration, formed in the low impurity concentration region, the conductivity type of which is the same as that of the low impurity concentration region.