Patents by Inventor Ivan L. Berry, III

Ivan L. Berry, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240315141
    Abstract: Patterned magnetoresistive random access memory (MRAM) stacks are formed by performing a main etch through a plurality of MRAM layers disposed on a substrate, where the main etch includes using ion beam etching (IBE). After the main etch, gapfill dielectric material is deposited in spaces between the patterned MRAM stacks, and the gapfill dielectric material is selectively etched or otherwise formed to an etch depth that is above a depth of an underlayer. After the gapfill dielectric material is formed, at least some of the gapfill dielectric material and any electrically conductive materials deposited on sidewalls of the patterned MRAM stacks are removed by performing an IBE trim etch.
    Type: Application
    Filed: May 21, 2024
    Publication date: September 19, 2024
    Inventors: Thorsten LILL, Ivan L. BERRY, III
  • Patent number: 12029133
    Abstract: Patterned magnetoresistive random access memory (MRAM) stacks are formed by performing a main etch through a plurality of MRAM layers disposed on a substrate, where the main etch includes using ion beam etching (IBE). After the main etch, gapfill dielectric material is deposited in spaces between the patterned MRAM stacks, and the gapfill dielectric material is selectively etched or otherwise formed to an etch depth that is above a depth of an underlayer. After the gapfill dielectric material is formed, at least some of the gapfill dielectric material and any electrically conductive materials deposited on sidewalls of the patterned MRAM stacks are removed by performing an IBE trim etch.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: July 2, 2024
    Assignee: Lam Research Corporation
    Inventors: Thorsten Lill, Ivan L. Berry, III
  • Publication number: 20230298904
    Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include modifying one or more surface layers of material on the substrate and exposing the one or more modified surface layers on the substrate to an electron source thereby removing, without using a plasma, the one or more modified surface layers on the substrate. An apparatus may include a processing chamber, a process gas unit, an electron source, and a controller with instructions configured to cause the process gas unit to flow a first process gas to a substrate in a chamber interior, the first process gas is configured to modify one or more layers of material on the substrate, and to cause the electron source to generate electrons and expose the one or more modified surface layers on the substrate to the electrons, the one or more modified surface layers being removed, without using a plasma.
    Type: Application
    Filed: March 21, 2023
    Publication date: September 21, 2023
    Inventors: Ivan L. Berry, III, Thorsten Lill, Andreas Fischer
  • Patent number: 11637022
    Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include modifying one or more surface layers of material on the substrate and exposing the one or more modified surface layers on the substrate to an electron source thereby removing, without using a plasma, the one or more modified surface layers on the substrate. An apparatus may include a processing chamber, a process gas unit, an electron source, and a controller with instructions configured to cause the process gas unit to flow a first process gas to a substrate in a chamber interior, the first process gas is configured to modify one or more layers of material on the substrate, and to cause the electron source to generate electrons and expose the one or more modified surface layers on the substrate to the electrons, the one or more modified surface layers being removed, without using a plasma.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: April 25, 2023
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill, Andreas Fischer
  • Patent number: 11520953
    Abstract: Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a quantum mechanical simulation. Labels indicative of etch characteristics may be associated with the chemical characteristics and associated energies of the given thermal etch reaction. The machine learning model can be trained using chemical characteristics and associated energies as independent variables and labels as dependent variables across many different etch reactions of different types. When chemical characteristics and associated energies for a new thermal etch reaction are provided as inputs in the machine learning model, the machine learning model can accurately predict etch characteristics of the new thermal etch reaction as outputs.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: December 6, 2022
    Assignee: Lam Research Corporation
    Inventors: Thorsten Lill, Andreas Fischer, Ivan L. Berry, III, Nerissa Sue Draeger, Richard A. Gottscho
  • Publication number: 20220165546
    Abstract: High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions that separate a plasma-generating space from an ionization space. Negative ions of the reactive species can be generated by electron attachment ionization in the ionization space when a plasma is ignited in the plasma-generating space. Positive ions of the inert gas species can be generated by Penning ionization in the ionization space when the plasma is quenched in the plasma-generating space.
    Type: Application
    Filed: March 6, 2020
    Publication date: May 26, 2022
    Inventors: Thorsten Lill, Ivan L. Berry, III, Theodoros Panagopoulos
  • Publication number: 20220131071
    Abstract: Patterned magnetoresistive random access memory (MRAM) stacks are formed by performing a main etch through a plurality of MRAM layers disposed on a substrate, where the main etch includes using ion beam etching (IBE). After the main etch, gapfill dielectric material is deposited in spaces between the patterned MRAM stacks, and the gapfill dielectric material is selectively etched or otherwise formed to an etch depth that is above a depth of an underlayer. After the gapfill dielectric material is formed, at least some of the gapfill dielectric material and any electrically conductive materials deposited on sidewalls of the patterned MRAM stacks are removed by performing an IBE trim etch.
    Type: Application
    Filed: February 26, 2020
    Publication date: April 28, 2022
    Applicants: Lam Research Corporation, Lam Research Corporation
    Inventors: Thorsten Lill, Ivan L. Berry, III
  • Patent number: 11289306
    Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: March 29, 2022
    Assignee: Lam Research Corporation
    Inventors: Thorsten Lill, Ivan L. Berry, III, Anthony Ricci
  • Patent number: 11195730
    Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: December 7, 2021
    Assignee: Lam Research AG
    Inventors: Rainer Obweger, Andreas Gleissner, Thomas Wirnsberger, Franz Kumnig, Alessandro Baldaro, Christian Thomas Fischer, Mu Hung Chou, Rafal Ryszard Dylewicz, Nathan Lavdovsky, Ivan L. Berry, III
  • Publication number: 20210280433
    Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include modifying one or more surface layers of material on the substrate and exposing the one or more modified surface layers on the substrate to an electron source thereby removing, without using a plasma, the one or more modified surface layers on the substrate. An apparatus may include a processing chamber, a process gas unit, an electron source, and a controller with instructions configured to cause the process gas unit to flow a first process gas to a substrate in a chamber interior, the first process gas is configured to modify one or more layers of material on the substrate, and to cause the electron source to generate electrons and expose the one or more modified surface layers on the substrate to the electrons, the one or more modified surface layers being removed, without using a plasma.
    Type: Application
    Filed: July 3, 2019
    Publication date: September 9, 2021
    Applicant: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill, Andreas Fischer
  • Patent number: 11062920
    Abstract: The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: July 13, 2021
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Patent number: 10998167
    Abstract: Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: May 4, 2021
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Patent number: 10825652
    Abstract: Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.
    Type: Grant
    Filed: January 8, 2015
    Date of Patent: November 3, 2020
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Patent number: 10679868
    Abstract: Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO activation of an oxide surface. Once activated, a fluorine-containing gas or vapor etches the activated surface. Etching is self-limiting as once the activated surface is removed, etching stops since the fluorine species does not spontaneously react with the un-activated oxide surface. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: June 9, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ivan L. Berry, III, Pilyeon Park, Faisal Yaqoob
  • Patent number: 10580628
    Abstract: One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: March 3, 2020
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill, Kenneth Reese Reynolds
  • Patent number: 10490426
    Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: November 26, 2019
    Assignee: LAM RESEARCH AG
    Inventors: Rainer Obweger, Andreas Gleissner, Thomas Wirnsberger, Franz Kumnig, Alessandro Baldaro, Christian Thomas Fischer, Mu Hung Chou, Rafal Ryszard Dylewicz, Nathan Lavdovsky, Ivan L. Berry, III
  • Patent number: 10483085
    Abstract: Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: November 19, 2019
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Publication number: 20190340316
    Abstract: Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a quantum mechanical simulation. Labels indicative of etch characteristics may be associated with the chemical characteristics and associated energies of the given thermal etch reaction. The machine learning model can be trained using chemical characteristics and associated energies as independent variables and labels as dependent variables across many different etch reactions of different types. When chemical characteristics and associated energies for a new thermal etch reaction are provided as inputs in the machine learning model, the machine learning model can accurately predict etch characteristics of the new thermal etch reaction as outputs.
    Type: Application
    Filed: May 3, 2018
    Publication date: November 7, 2019
    Inventors: Thorsten Lill, Andreas Fischer, Ivan L. Berry, III, Nerissa Sue Draeger, Richard A. Gottscho
  • Publication number: 20190237298
    Abstract: Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.
    Type: Application
    Filed: April 15, 2019
    Publication date: August 1, 2019
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Publication number: 20180233662
    Abstract: A method for processing a substrate including a magnetoresistive random access memory (MRAM) stack includes providing a substrate including the MRAM stack and creating a first mask layer on a surface of the MRAM stack. The first mask layer defines a first mask pattern including a first plurality of spaced mask lines extending in a first direction across the surface of the MRAM stack and first spaces located between the first plurality of spaced mask lines. The method further includes performing ion beam etching in the first direction in the first spaces located between the first plurality of spaced mask lines to remove material of the MRAM stack located below the first spaces.
    Type: Application
    Filed: February 12, 2018
    Publication date: August 16, 2018
    Inventors: Ivan L. Berry, III, Thorsten Lill