Patents by Inventor Iwamoto Kunihiko

Iwamoto Kunihiko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 8044452
    Abstract: The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: October 25, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Tominaga Koji, Iwamoto Kunihiko, Yasuda Tetsuji, Nabatame Toshihide
  • Semiconductor device and method for manufacturing the same
    Publication number: 20070170502
    Abstract: The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.
    Type: Application
    Filed: March 18, 2004
    Publication date: July 26, 2007
    Inventors: Tominaga Koji, Iwamoto Kunihiko, Yasuda Tetsuji, Nabatame Toshihide