Patents by Inventor Iwao Nakamura

Iwao Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9816182
    Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: November 14, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Yuichi Wada, Hiroshi Ashihara, Keishin Yamazaki, Takurou Ushida, Iwao Nakamura, Manabu Izumi
  • Publication number: 20150140835
    Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 21, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto TATENO, Yuichi WADA, Hiroshi ASHIHARA, Keishin YAMAZAKI, Takurou USHIDA, Iwao NAKAMURA, Manabu IZUMI
  • Patent number: 8268731
    Abstract: Disclosed is a producing method of a semiconductor device, including: loading a substrate into a reaction tube; oxidizing the substrate under an atmospheric pressure by supplying a plurality of kinds of gases which react with each other and an inert gas into the reaction tube; and unloading, from the reaction tube, the substrate after the oxidizing, wherein in the oxidizing, a flow rate of the inert gas is varied in accordance with a variation of the atmospheric pressure to keep constant a partial pressure of an oxidizing gas or partial pressures of oxidizing gases in the reaction tube, and the flow rate of the inert gas is calculated based on a pre-calculated flow rate of a gas or pre-calculated flow rates of gases produced by reaction of the plurality of gases and a pre-calculated flow rate of a gas which is not consumed by the reaction and which remains or pre-calculated flow rates of gases which are not consumed by the reaction and which remain.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: September 18, 2012
    Assignee: Hitatchi Kokusai Electric Inc.
    Inventors: Naoto Nakamura, Iwao Nakamura, Ryota Sasajima
  • Patent number: 8264608
    Abstract: A television-signal receiver includes: a tuner receiving a television signal; a video demodulation unit for an analog broadcast received by the tuner; an audio demodulation unit for the analog broadcast received by the tuner; a data demodulation unit for a digital broadcast received by the tuner; a channel-selection controller that controls a channel received by the tuner and is capable of presetting the receive channel; and a determination unit that determine a country or region where the tuner receives the broadcasts, based on a receive result by each channel-selection frequency in the tuner, an analysis result of a blanking signal included in a video signal demodulated in the video demodulation unit, an analysis result of data demodulated in the data demodulation unit, and a demodulation result in the audio demodulation unit.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: September 11, 2012
    Assignee: Sony Corporation
    Inventor: Iwao Nakamura
  • Patent number: 7901206
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: March 8, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Patent number: 7891975
    Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: February 22, 2011
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Iwao Nakamura, Akira Morohashi, Ryuji Yamamoto
  • Patent number: 7865070
    Abstract: To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: January 4, 2011
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Iwao Nakamura, Naoto Nakamura, Sadao Nakashima
  • Patent number: 7820118
    Abstract: To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. A substrate treatment apparatus 100 includes: a reaction tube 42 for treating a substrate 54; a heater 46 for heating the substrate 54 in the reaction tube 42; a cooling air channel 72 for circulating cooling air 70 outside the reaction tube 42; and a thermocouple 82 for detecting temperature around the reaction tube 42. The thermocouple 82 is disposed in the cooling air channel 72 for circulating cooling air 70 in a state where the thermocouple 82 is covered with a protection tube 86, and a cover 88 for intercepting flow toward the protection tube 86 of the cooling air 70 is disposed outside the protection tube 86.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: October 26, 2010
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Keishin Yamazaki, Iwao Nakamura, Ryota Sasajima
  • Publication number: 20100148415
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
    Type: Application
    Filed: January 6, 2010
    Publication date: June 17, 2010
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Publication number: 20100144161
    Abstract: A semiconductor device manufacturing method and a substrate processing apparatus are provided to reduce contaminants generating due to striping of an oxide film formed on a silicon carbide member. The manufacturing method includes: loading a substrate into a silicon carbide reaction tube; forming an oxide film on the substrate by supplying oxidizing gas into the reaction tube and causing thermal oxidation; unloading the processed substrate from the reaction tube; and in a state where the processed substrate is unloaded from the reaction tube, after increasing an inside temperature of the reaction tube until temperature of an oxide film formed on an inner wall of the reaction tube through the thermal oxidation is increased to at least a temperature corresponding to a strain point of the oxide film, decreasing the inside temperature of the reaction tube to below a temperature at which the processed substrate is unloaded from the reaction tube.
    Type: Application
    Filed: December 7, 2009
    Publication date: June 10, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventor: Iwao NAKAMURA
  • Patent number: 7667301
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: February 23, 2010
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Publication number: 20100029092
    Abstract: A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
    Type: Application
    Filed: March 30, 2006
    Publication date: February 4, 2010
    Applicant: HITACHI KIKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Ryota Sasajima
  • Patent number: 7625205
    Abstract: A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: December 1, 2009
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Iwao Nakamura
  • Publication number: 20090186489
    Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
    Type: Application
    Filed: March 16, 2009
    Publication date: July 23, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
  • Publication number: 20090111285
    Abstract: [Problem] To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. [Means for Resolution] A substrate treatment apparatus 100 includes: a reaction tube 42 for treating a substrate 54; a heater 46 for heating the substrate 54 in the reaction tube 42; a cooling air channel 72 for circulating cooling air 70 outside the reaction tube 42; and a thermocouple 82 for detecting temperature around the reaction tube 42. The thermocouple 82 is disposed in the cooling air channel 72 for circulating cooling air 70 in a state where the thermocouple 82 is covered with a protection tube 86, and a cover 88 for intercepting flow toward the protection tube 86 of the cooling air 70 is disposed outside the protection tube 86.
    Type: Application
    Filed: August 4, 2006
    Publication date: April 30, 2009
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Keishin Yamazaki, Iwao Nakamura, Ryota Sasajima
  • Publication number: 20090016854
    Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.
    Type: Application
    Filed: March 27, 2006
    Publication date: January 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
  • Publication number: 20080267598
    Abstract: [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. [Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
    Type: Application
    Filed: March 22, 2005
    Publication date: October 30, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Iwao Nakamura, Naoto Nakamura, Sadao Nakashima
  • Publication number: 20080028429
    Abstract: A television-signal receiver includes: a tuner receiving a television signal; a video demodulation unit for an analog broadcast received by the tuner; an audio demodulation unit for the analog broadcast received by the tuner; a data demodulation unit for a digital broadcast received by the tuner; a channel-selection controller that controls a channel received by the tuner and is capable of presetting the receive channel; and a determination unit that determine a country or region where the tuner receives the broadcasts, based on a receive result by each channel-selection frequency in the tuner, an analysis result of a blanking signal included in a video signal demodulated in the video demodulation unit, an analysis result of data demodulated in the data demodulation unit, and a demodulation result in the audio demodulation unit.
    Type: Application
    Filed: July 19, 2007
    Publication date: January 31, 2008
    Applicant: Sony Corporation
    Inventor: Iwao Nakamura
  • Publication number: 20070297876
    Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.
    Type: Application
    Filed: August 1, 2005
    Publication date: December 27, 2007
    Inventors: Ryota Sasajima, Iwao Nakamura, Akira Morohashi, Ryuji Yamamoto
  • Publication number: 20070292814
    Abstract: A heat treatment device and a method of manufacturing substrates capable of reducing the slippage of the substrates when the substrates are supported on support parts comprising plate-like members. The device comprises a support device having the support parts in contact with the substrates and a body part supporting the support parts. Each of the support parts comprises the plate-like members supporting the substrate so as not to come into contact with the peripheral edge portion of the substrate, and a non-contact part communication with the outside without coming into contact with the substrate is formed in the substrate placing surface of the support part. The overall opening area of the portion of the non-contact part communicating with the outside is 25 to 94% of the overall area of the substrate placing surface.
    Type: Application
    Filed: September 29, 2005
    Publication date: December 20, 2007
    Inventors: Ryota Sasajima, Iwao Nakamura