Patents by Inventor Jürgen Off
Jürgen Off has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888083Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.Type: GrantFiled: July 11, 2022Date of Patent: January 30, 2024Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20230290671Abstract: A wafer carrier may include a first main surface suitable for receiving wafers, a second main surface arranged on a side opposite to the first main surface, and an annular depression or an elevation containing wafer carrier material in the region of the second main surface, concentric with respect to the wafer carrier.Type: ApplicationFiled: July 22, 2021Publication date: September 14, 2023Inventors: Harald DIMMELMEIER, Harald LAUX, Juergen OFF
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Patent number: 11658265Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm?2.Type: GrantFiled: December 22, 2021Date of Patent: May 23, 2023Assignee: OSRAM OLED GmbHInventors: Bastian Galler, Jürgen Off
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Patent number: 11616164Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.Type: GrantFiled: January 17, 2019Date of Patent: March 28, 2023Assignee: OSRAM OLED GMBHInventors: Philipp Drechsel, Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20220393062Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.Type: ApplicationFiled: October 6, 2020Publication date: December 8, 2022Applicants: OSRAM Opto Semiconductors GmbH, OSRAM Opto Semiconductors GmbHInventors: Xiaojun Chen, Heng Wang, Jong Ho Na, Alvaro Gomez-Iglesias, Jürgen Off, Philipp Drechsel, Thomas Lehnhardt
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Publication number: 20220344532Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11430907Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: GrantFiled: March 19, 2021Date of Patent: August 30, 2022Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11329193Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.Type: GrantFiled: October 19, 2018Date of Patent: May 10, 2022Assignee: OSRAM OLED GMBHInventors: Xiaojun Chen, Alexander Frey, Philipp Drechsel, Thomas Lehnhardt, Lise Lahourcade, Jürgen Off
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Publication number: 20220115559Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm?2.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Bastian Galler, Jürgen Off
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Patent number: 11276800Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm?2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.Type: GrantFiled: March 13, 2018Date of Patent: March 15, 2022Assignee: OSRAM OLED GMBHInventors: Bastian Galler, Jürgen Off
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Publication number: 20210210651Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: ApplicationFiled: March 19, 2021Publication date: July 8, 2021Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11018277Abstract: A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.Type: GrantFiled: October 24, 2017Date of Patent: May 25, 2021Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Lise Lahourcade, Jürgen Off
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Patent number: 11005003Abstract: A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: GrantFiled: April 15, 2019Date of Patent: May 11, 2021Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 10950752Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.Type: GrantFiled: February 22, 2017Date of Patent: March 16, 2021Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Patent number: 10862003Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.Type: GrantFiled: May 18, 2017Date of Patent: December 8, 2020Assignee: OSRAM OLD GMBHInventors: Thomas Lehnhardt, Werner Bergbauer, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Publication number: 20200365765Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.Type: ApplicationFiled: October 19, 2018Publication date: November 19, 2020Inventors: Xiaojun Chen, Alexander Frey, Philipp Drechsel, Thomas Lehnhardt, Lise Lahourcade, Jürgen Off
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Publication number: 20200335658Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.Type: ApplicationFiled: January 17, 2019Publication date: October 22, 2020Applicant: OSRAM OLED GmbHInventors: Philipp Drechsel, Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20200243716Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.Type: ApplicationFiled: February 22, 2017Publication date: July 30, 2020Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Patent number: 10727052Abstract: A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.Type: GrantFiled: January 4, 2019Date of Patent: July 28, 2020Assignee: OSRAM OLED GMBHInventors: Tobias Gotschke, Jürgen Off, Korbinian Perzlmaier
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Publication number: 20200119228Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.Type: ApplicationFiled: May 18, 2017Publication date: April 16, 2020Applicant: OSRAM Opto Semiconductors GmbHInventors: Thomas Lehnhardt, Werner Bergbauer, Jürgen Off, Lise Lahourcade, Philipp Drechsel