Abstract: The invention relates to a method for etching of silicon surfaces with the following steps: Furnishing an aqueous alkaline hydrocolloid etching solution containing at least one hydrocolloid, at a temperature of 50° C. to 95° C., bringing the silicon surface in contact with the hydrocolloid etching solution for a specified duration, and Removing the hydrocolloid etching solution from the silicon surface.

Abstract: The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution.

Abstract: The invention relates to a method for etching substrates (4) received in an etching solution (2). Said method comprises the following steps: A basin (1) which can receive the etching solution (2) is prepared, the substrate (4) is completely immersed in the etching solution (2), a flow which surrounds the substrate (4) is produced and the speed and/or direction of the flow can be periodically altered.

Abstract: The present invention is directed to a device for retaining substrates (S), such as wafers or silicon substrates for the production of photovoltaic elements. The device includes opposing walls (1) that are interconnected by at least two rod-like carrier elements (2, 3) that are provided with a retaining means (5) for retaining the substrates (S) in a vertical position oriented parallel to the walls (1). At least one rod-like counter carrier element (4) is also provided and interconnects the two walls (1). The counter carrier element (4) is positioned in relation to the carrier elements (2, 3) so that vertical movement of the substrates (S) relative to the walls (1) is limited and loading or unloading of the substrates (S) is possible at a slant in relation to the vertical direction (V).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).