Patents by Inventor Jaakko Mäkelä

Jaakko Mäkelä has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923236
    Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.
    Type: Grant
    Filed: September 12, 2022
    Date of Patent: March 5, 2024
    Assignee: TURUN YLIOPISTO
    Inventors: Pekka Laukkanen, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtiö
  • Publication number: 20230005786
    Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.
    Type: Application
    Filed: September 12, 2022
    Publication date: January 5, 2023
    Applicant: Turun yliopisto
    Inventors: Pekka LAUKKANEN, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtio
  • Patent number: 11443977
    Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: September 13, 2022
    Assignee: TURUN YLIOPISTO
    Inventors: Pekka Laukkanen, Mikhail Kuzmin, Jaakko Mäkelä, Marjukka Tuominen, Marko Punkkinen, Antti Lahti, Kalevi Kokko, Juha-Pekka Lehtiö
  • Publication number: 20200105576
    Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).
    Type: Application
    Filed: May 30, 2018
    Publication date: April 2, 2020
    Applicant: Turun yliopisto
    Inventors: Pekka LAUKKANEN, Mikhail KUZMIN, Jaakko MÄKELÄ, Marjukka TUOMINEN, Marko PUNKKINEN, Antti LAHTI, Kalevi KOKKO, Juha-Pekka LEHTIÖ
  • Patent number: 6287415
    Abstract: Arrangement in a soda recovery boiler, comprising normal melt chutes (6) for removing molten salt from the recovery boiler (1). The recovery boiler (1) comprises an outlet (8), mounted in the wall of the recovery boiler such that it is situated lower down than the normal melt chutes (6), in which case the molten salt can be removed from the bottom of the recovery boiler substantially through the outlet (8), when the recovery boiler (1) is emptied for maintenance or the like.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: September 11, 2001
    Assignee: Kvaerner Pulping Oy
    Inventors: Kalle Salmi, Jaakko Mäkelä, Aki Hakulinen, Tuomo Ruohola