Abstract: Semiconductor packages, and methods for making the semiconductor packages, having an interposer structure with one or more interposer and an extension platform, which has an opening for placing the interposer, and the space between the interposer and the extension platform is filled with a polymeric material to form a unitary interposer-extension platform composite structure. A stacked structure may be formed by at least a first semiconductor chip coupled to the interposer and at least a second semiconductor chip coupled to the extension platform, and at least one bridge extending over the space that electrically couples the extension platform and the interposer. The extension platform may include a recess step section that may accommodate a plurality of passive devices to reduced power delivery inductance loop for the high-density 2.5D and 3D stacked packaging applications.

Abstract: Embodiments herein relate to a module which can be inserted into or removed from a computing device by a user. The module includes an input-output port which is configured for a desired specification, such as USB-A, USB-C, Thunderbolt, DisplayPort or HDMI. The port can be provided on an expansion card such as an M.2 card for communicating with a host platform. The host platform can communicate with different types of modules in a standardized way so that complexity and costs are reduced. In another aspect, with a dual port module, the host platform can concurrently send/receive power through one port and send/receive data from the other port.

Abstract: To address the issue of shrinking volume that can be allocated for electrical components, a system can use an interposer with a flexible portion. A first portion of the interposer can electrically connect to a top side of a motherboard. A flexible portion of the interposer, adjacent to the first portion, can wrap around an edge of the motherboard. A peripheral portion of the interposer, adjacent to the flexible portion, can electrically connect to a bottom side of the motherboard. The peripheral portion can be flexible or rigid. The interposer can define a cavity that extends through the first portion of the interposer. A chip package can electrically connect to the first portion of the interposer. The chip package can be coupled to at least one electrical component that extends into the cavity when the chip package is connected to the interposer.

Abstract: The present disclosure is directed to an electronic assembly and method of forming thereof. The electronic assembly may include a substrate and a first die with first and second opposing surfaces. The first die may be coupled to the substrate at the first surface. At least one first trench may extend partially through the first die from the second surface. A stiffener may be attached to the substrate. The stiffener may have a cavity that accommodates the first die, in which the second surface of the first die faces the stiffener. A thermally conductive layer may be positioned between the stiffener and the first die. The conductive layer at least partially fills the at least one first trench.

Abstract: The present disclosure is directed to semiconductor packages incorporating composite or hybrid bridges that include first and second interconnect bridges positioned on a substrate and a power corridor with a plurality of vertical channels positioned on the substrate between the first and second interconnect bridges, wherein the power corridor integrally joins the first interconnect bridge to the second interconnect bridge.

Abstract: A semiconductor package substrate includes an encapsulated interconnect on a land side of the substrate. The encapsulated interconnect includes an integral metallic structure that has a smaller contact end against the semiconductor package substrate, and a larger contact end for board mounting.

Abstract: Disclosed herein are integrated circuit (IC) structures with a conductive element coupled to a first surface of a package substrate, where the conductive element has cavities for embedding components and the embedded components are electrically connected to the conductive element, as well as related apparatuses and methods. In some embodiments, embedded components have one terminal end, which may be positioned vertically, with the terminal end facing into the cavity, and coupled to the conductive element. In some embodiments, embedded components have two terminal ends, which may be positioned vertically with one terminal end coupled to the conductive element and the other terminal end coupled to the package substrate. In some embodiments, embedded components include passive devices, such as capacitors, resistors, and inductors. In some embodiments, a conductive element is a stiffener.

Abstract: The present disclosure is directed to a printed circuit board having a first surface and providing a signal pathway using a plurality of plated through hole (PTH) vias including a first set of PTH vias having a first PTH via coupled to a second PTH via and a first vertical separator being configured therebetween, with the first vertical separator extending a first depth from the first surface, and a second set of PTH vias having a third PTH via coupled to a fourth PTH via and a second vertical separator being configured therebetween, with the second vertical separator extending a second depth from the first surface, and a connector trace coupling the second PTH via to the third PTH via being positioned at a third depth from the first surface, for which the third depth is less than the first depth or the second depth.

Abstract: A semiconductor package includes a silicon die including a first die surface coupled to a package substrate, a second die surface opposite to the first die surface, and at least one die sidewall orthogonal to the first die surface and the second die surface, and a mold layer including a first mold surface, a second mold surface opposite to the first mold surface, and at least one mold sidewall orthogonal to the first mold surface and the second mold surface, the at least one mold sidewall being disposed along the at least one die sidewall, and the mold layer further including a power conductive corridor extending from the first mold surface and coupled to the package substrate through the first mold surface. The semiconductor package further includes a first stacked device coupled to the first die surface and to the power conductive corridor through the first mold surface.

Abstract: A semiconductor package including: a package substrate including a base die disposed on a top surface of the package substrate, the base die including a plurality of electrical components disposed on a top surface of the base die, the plurality of electrical components including a first electrical component configured adjacent to a second electrical component, wherein the first electrical component and the second electrical component have an asymmetric form-factor; and a stiffener including: a stiffener main portion, wherein the stiffener main portion is affixed to the top surface of the package substrate and configured at least partially surrounding the base die; and a stiffener extension portion configured to extend from the stiffener main portion to be disposed at least partially over the top surface of the base die adjacent to the first electrical component and the second electrical component.

Abstract: The present disclosure is directed to a printed circuit board having a composite upper surface with a first section of a first-type of printed circuit board and a second section of a second-type of printed circuit board, for which the first section of the first-type of printed circuit board and the second section of the second-type of printed circuit board are coupled, respectively, to at least one device that is configured to abridge the first and second sections of the composite upper surface. In an aspect, the second-type of printed circuit board is configured to be embedded in the first-type of printed circuit board and the first-type of printed circuit board is configured to receive the second-type of printed circuit board.

Abstract: A semiconductor package includes a package substrate, a base die including a first die surface coupled to the package substrate, and a second die surface opposite to the first die surface, and a first device including a first device surface coupled to the package substrate, and a second device surface opposite to the first device surface. The semiconductor package further includes a second device including a third device surface coupled to the second device surface, and a fourth device surface opposite to the third device surface, and a bridge including a first portion coupled to the package substrate, and a second portion coupled to the first portion, the fourth device surface and the second die surface.

Abstract: A computing device includes a flexible display screen, a housing to house at least one processor device and at least one memory element, and a first wing to support a side portion of the display screen. The front face of the housing includes a center portion of the display screen. The first wing is connected to the housing by a hinge, the first wing configured to swivel about an axis defined by the hinge. The hinge is configured to lock the first wing in at least two wing positions, a first of the wing positions supports the side portion of the display screen in a first orientation, a second of the wing positions supports the side portion of the display screen in a second orientation, and the side portion of the display screen is active in the first orientation and hidden in the second orientation.

Abstract: An electronic circuit including a substrate having a first dielectric characteristic. The substrate can include a first side and a second side. An intermediary material can be disposed within the substrate. For instance, the intermediary material can be located between the first side and the second side. The intermediary material can include a second dielectric characteristic, where the second dielectric characteristic is different than the first dielectric characteristic. A first conductive layer can be disposed on the first side, and a second conductive layer can be disposed on the second side. A conductive path can be electrically coupled between the first conductive layer and the second conductive layer. The conductive path can be in contact with at least a portion of the intermediary material.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: The technique described herein includes a device to address the electrical performance (e.g. signal integrity) degradation ascribed to electromagnetic interference and/or crosstalk coupling occur at tightly coupled (e.g. about 110 ?m pitch or less) interconnects, including the first level (e.g. the interconnection between a die and a package substrate). In some embodiments, this invention provides a conductive layer with a plurality of cavities to isolate electromagnetic coupling and/or interference between adjacent interconnects for electronic device performance scaling. In some embodiments, at least one interconnect joint is coupled to the conductive layer, and at least one interconnect joint is isolated from the conductive layer by a dielectric lining at least one of the cavities, the conductive layer being associated to a ground reference voltage by the interconnect joint coupled to the conductive layer.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a first rigid substrate, a second rigid substrate, a flexible substrate comprising a first portion attached to the first rigid substrate, a second portion attached to the second rigid substrate, a middle portion connecting the first portion to the second portion, wherein the middle portion is bent, and metallic traces therethrough, and a component forming a direct interface with the middle portion of the flexible substrate, the component electrically coupled to the metallic traces. In selected examples, the device further includes a casing.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: The present disclosure generally relates to an electronic assembly. The electronic assembly may include a first substrate including a first surface, an opposing second surface and a recess opening extending through the first surface. The electronic assembly may also include a power delivery mold frame including a first mold surface, an opposing second mold surface, a plurality of first metal planes and a plurality of second metal planes extending between the first and second mold surfaces, the power delivery mold frame arranged in the recess opening and coupled to the first substrate through the first mold surface. The electronic assembly may further include a second substrate including a subsequent first surface, an opposing subsequent second surface, the second substrate coupled to the power delivery mold frame through a plurality of first solder bumps and further coupled to the first substrate through a plurality of second solder bumps at the subsequent first surface.

Abstract: Two conductive reference layers are embedded in a semiconductor package substrate. The embedded reference layers facilitate low electromagnetic noise coupling between adjacent signals for semiconductor device package.